From 8e227ee00a49bc25714678ea38939b2af5817bd8 Mon Sep 17 00:00:00 2001 From: hackbard Date: Tue, 31 May 2011 00:28:38 +0200 Subject: [PATCH 1/1] started to integrate si int mig as an excursus --- posic/thesis/defects.tex | 7 ++++++- 1 file changed, 6 insertions(+), 1 deletion(-) diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex index 7497e1c..a02e209 100644 --- a/posic/thesis/defects.tex +++ b/posic/thesis/defects.tex @@ -1456,7 +1456,12 @@ Si atoms 1 and 2, which form the initial DB, occupy Si lattice sites in the fina These results support the above assumptions of an increased entropic contribution to structural formation involving C$_{\text{s}}$ to a greater extent. -% todo migration of \si{}! +% link to migration of \si{}! +The possibility for separated configurations of \cs{} and \si{} becomes even more likely if one of the constituents exhibits a low barrier of migration. +In this case, the \si{} is assumed to constitute the mobile defect compared to the stable \cs{} atom. +Acoording to Fig.~\ref{fig:defects:si_mig1}, an activation energy of \unit[0.67]{eV} is necessary for the transition of the \si{} \hkl[0 1 -1] to \hkl[1 1 0] DB located at the neighbored Si lattice site in \hkl[1 1 -1] direction. +Indeed, the transition ... equal to as if cs is near .. +Further ... % kept for nostalgical reason! -- 2.20.1