From b09b261a9e30d808912028fc405dc1992e185fae Mon Sep 17 00:00:00 2001 From: hackbard Date: Fri, 4 Mar 2011 15:46:42 +0100 Subject: [PATCH] nearly able to start w ibs now ... --- posic/thesis/sic.tex | 4 +++- 1 file changed, 3 insertions(+), 1 deletion(-) diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index 81c6a1d..5961c39 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -212,7 +212,9 @@ Although, in the first experiments, temperatures still above \unit[1100]{$^{\cir In the latter approach, as in GSMBE, excess Si atoms, which are controlled by the Si/C flux ratio, result in the formation of a Si adlayer and the formation of a non-stoichiometric, reconstructed surface superstructure, which influences the mobility of adatoms and, thus, has a decisive influence on the growth mode, polytype and crystallinity \cite{fissel95,fissel96,righi03}. Therefore, carefully controlling the Si/C ratio could be exploited to obtain definite heterostructures of different SiC polytypes providing the possibility for band gap engineering in SiC materials. -To summarize ... remaining obstacles are ... APB in 3C ... and micropipes in hexagonal SiC? +To summarize, much progress has been made in SiC thin film growth during the last few years. +However, the frequent occurence of defects such as dislocations, twins and double positioning boundaries limit the structural and electrical characteristics of large SiC films. +Solving these issues remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}. \subsection{Ion beam synthesis of cubic silicon carbide} -- 2.20.1