From b22bc79e3d45ce76a8b0f61c73b52ebdc5011ebb Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@hackdaworld.org>
Date: Wed, 4 Jan 2012 00:08:26 +0100
Subject: [PATCH] starting results now ...

---
 posic/talks/defense.tex | 62 ++++++++++++++++++++++++-----------------
 1 file changed, 36 insertions(+), 26 deletions(-)

diff --git a/posic/talks/defense.tex b/posic/talks/defense.tex
index b26dd01..ddfeca9 100644
--- a/posic/talks/defense.tex
+++ b/posic/talks/defense.tex
@@ -248,6 +248,7 @@ E\\
 
 \begin{slide}
 
+\headphd
  {\large\bf
   Polytypes of SiC\\[0.6cm]
  }
@@ -285,13 +286,13 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \end{tabular}
 
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,2.10)(0.4,0.53)
+\psellipse[linecolor=green](5.7,2.05)(0.4,0.50)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,0.92)(0.4,0.23)
+\psellipse[linecolor=green](5.6,0.89)(0.4,0.20)
 \end{pspicture}
 \begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.45,0.45)(0.4,0.23)
+\psellipse[linecolor=red](10.45,0.42)(0.4,0.20)
 \end{pspicture}
 
 \end{slide}
@@ -458,27 +459,6 @@ Synthesis of large area SiC films possible
 
 \begin{slide}
 
-\headphd
-{\large\bf
- Outline
-}
-
- \begin{itemize}
-  \item Supposed precipitation mechanism of SiC in Si
-  \item Utilized simulation techniques
-        \begin{itemize}
-         \item Molecular dynamics (MD) simulations
-         \item Density functional theory (DFT) calculations
-        \end{itemize}
-  \item C and Si self-interstitial point defects in silicon
-  \item Silicon carbide precipitation simulations
-  \item Summary / Conclusion
- \end{itemize}
-
-\end{slide}
-
-\begin{slide}
-
 \headphd
 {\large\bf
   Supposed precipitation mechanism of SiC in Si
@@ -528,7 +508,7 @@ $\rho^*_{\text{Si}}=\unit[97]{\%}$
  \begin{minipage}{4.0cm}
  \begin{center}
  C-Si dimers (dumbbells)\\[-0.1cm]
- on Si interstitial sites
+ on Si lattice sites
  \end{center}
  \end{minipage}
  \hspace{0.1cm}
@@ -738,6 +718,33 @@ r = \unit[2--4]{nm}
 
 \begin{slide}
 
+\headphd
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+  {\color{gray}
+  \item Introduction / Motivation
+  \item Assumed SiC precipitation mechanisms / Controversy
+  }
+  \item Utilized simulation techniques
+        \begin{itemize}
+         \item Molecular dynamics (MD) simulations
+         \item Density functional theory (DFT) calculations
+        \end{itemize}
+  \item Simulation results
+        \begin{itemize}
+         \item C and Si self-interstitial point defects in silicon
+         \item Silicon carbide precipitation simulations
+        \end{itemize}
+  \item Summary / Conclusion
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
 \headphd
 {\large\bf
  Utilized computational methods
@@ -920,6 +927,9 @@ $E_{\text{b}}\rightarrow 0$: non-interacting, isolated defects\\
 
 \end{slide}
 
+\end{document}
+\ifnum1=0
+
 \begin{slide}
 
 \footnotesize
@@ -2310,4 +2320,4 @@ Investigation of structure \& structural evolution \ldots
 
 \end{document}
 
-%\fi
+\fi
-- 
2.20.1