From b6c9035922c11a92c52e0b0752d44225457d9966 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 31 Oct 2011 13:41:11 +0100 Subject: [PATCH] finished until outline slide --- posic/talks/mpi_app.tex | 162 ++++++++++++++++++++++++++-------------- 1 file changed, 107 insertions(+), 55 deletions(-) diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex index 9931ba1..2c9d67f 100644 --- a/posic/talks/mpi_app.tex +++ b/posic/talks/mpi_app.tex @@ -143,6 +143,9 @@ E\\ \end{center} \end{slide} +% no vertical centering +\centerslidesfalse + \ifnum1=0 % intro @@ -296,7 +299,6 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \end{slide} -\fi % fabrication \begin{slide} @@ -317,7 +319,7 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\ \vspace{2pt} -SiC thin film by MBE \& CVD +SiC thin films by MBE \& CVD \begin{itemize} \item Much progress achieved in homo/heteroepitaxial SiC thin film growth \item \underline{Commercially available} semiconductor power devices based on @@ -330,33 +332,33 @@ SiC thin film by MBE \& CVD \includegraphics[width=2.0cm]{cree.eps} \end{picture} -\vspace{-0.4cm} +\vspace{-0.2cm} Alternative approach: Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) +\vspace{0.2cm} + \scriptsize -\begin{minipage}{6.5cm} - \begin{itemize} - \item \underline{Implantation step 1}\\ - 180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\[0.1cm] - Box-like distribution of equally sized \&\\ - epitaxially oriented SiC precipitates - - \item \underline{Implantation step 2}\\ - 180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\[0.1cm] - Destruction of SiC nanocrystals\\ - in growing amorphous interface layers - \item \underline{Annealing}\\ - $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\[0.1cm] - Homogeneous, stoichiometric SiC layer\\ - with sharp interfaces - \end{itemize} +\framebox{ +\begin{minipage}{3.15cm} + \begin{center} +\includegraphics[width=3cm]{imp.eps}\\ + {\tiny + Carbon implantation + } + \end{center} \end{minipage} -\begin{minipage}{0.3cm} -\hfill +\begin{minipage}{3.15cm} + \begin{center} +\includegraphics[width=3cm]{annealing.eps}\\ + {\tiny + \unit[12]{h} annealing at \degc{1200} + } + \end{center} \end{minipage} +} \begin{minipage}{5.5cm} \includegraphics[width=5.8cm]{ibs_3c-sic.eps}\\[-0.2cm] \begin{center} @@ -366,26 +368,25 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) \end{center} \end{minipage} -\framebox{ - \begin{minipage}{6.3cm} - \begin{center} - {\color{blue} - Precipitation mechanism not yet fully understood! - } - \renewcommand\labelitemi{$\Rightarrow$} - \small - \underline{Understanding the SiC precipitation} - \begin{itemize} - \item significant technological progress in SiC thin film formation - \item perspectives for processes relying upon prevention of SiC precipitation - \end{itemize} - \end{center} - \end{minipage} +\end{slide} + +% contents + +\begin{slide} + +{\large\bf + Systematic investigation of C implantations into Si } +\vspace{1.7cm} +\begin{center} +\hspace{-1.0cm} +\includegraphics[width=0.75\textwidth]{imp_inv.eps} +\end{center} + \end{slide} -% contents +% outline \begin{slide} @@ -393,24 +394,51 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) Outline } - \begin{itemize} - \item Implantation of C in Si --- Overview of experimental observations - \item Utilized simulation techniques and modeled problems - \begin{itemize} - \item {\color{blue}Diploma thesis}\\ - \underline{Monte Carlo} simulations - modeling the selforganization process - leading to periodic arrays of nanometric amorphous SiC - precipitates - \item {\color{blue}Doctoral studies}\\ - Classical potential \underline{molecular dynamics} simulations - \ldots\\ - \underline{Density functional theory} calculations - \ldots\\[0.2cm] - \ldots on defects and SiC precipitation in Si - \end{itemize} - \item Summary / Conclusion / Outlook - \end{itemize} +\vspace{1.7cm} +\begin{center} +\hspace{-1.0cm} +\includegraphics[width=0.75\textwidth]{imp_inv.eps} +\end{center} + +\begin{pspicture}(0,0)(0,0) +\rput(6.0,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{ +\begin{minipage}{11cm} +{\color{red}Diploma thesis}\\ + \underline{Monte Carlo} simulation modeling the selforganization process\\ + leading to periodic arrays of nanometric amorphous SiC precipitates +\end{minipage} +}}} +\end{pspicture} +\begin{pspicture}(0,0)(0,0) +\rput(6.0,-0.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white]{ +\begin{minipage}{11cm} +{\color{blue}Doctoral studies}\\ + Classical potential \underline{molecular dynamics} simulations \ldots\\ + \underline{Density functional theory} calculations \ldots\\[0.2cm] + \ldots on defect formation and SiC precipitation in Si +\end{minipage} +}}} +\end{pspicture} +\begin{pspicture}(0,0)(0,0) +\psellipse[linecolor=red,linewidth=0.05cm](5,3.0)(0.8,1.0) +\end{pspicture} +\begin{pspicture}(0,0)(0,0) +\psellipse[linecolor=blue,linewidth=0.05cm](8.2,3.2)(1.5,1.6) +\end{pspicture} + +\end{slide} + +% continue here +\fi +\begin{slide} + +{\large\bf + Selforganization of nanometric amorphous SiC lamellae +} + +\begin{minipage}{6cm} +\includegraphics[width=6cm]{} +\end{minipage} \end{slide} @@ -418,6 +446,30 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0) \end{document} \ifnum1=0 +\begin{slide} + +{\large\bf + Selforganization of nanometric amorphous SiC lamellae +} + +\framebox{ + \begin{minipage}{6.3cm} + \begin{center} + {\color{blue} + Precipitation mechanism not yet fully understood! + } + \renewcommand\labelitemi{$\Rightarrow$} + \small + \underline{Understanding the SiC precipitation} + \begin{itemize} + \item significant technological progress in SiC thin film formation + \item perspectives for processes relying upon prevention of SiC precipitation + \end{itemize} + \end{center} + \end{minipage} +} + +\end{slide} \begin{slide} -- 2.20.1