From bac599835900c9c568e93d414a0d67422328c7f6 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 18 Aug 2008 00:56:17 +0200 Subject: [PATCH] nearly finished poster adaption, now zzZzZ --- posic/talks/helsinki_2008.tex | 115 ++++++++++++++++++++++++++-------- 1 file changed, 88 insertions(+), 27 deletions(-) diff --git a/posic/talks/helsinki_2008.tex b/posic/talks/helsinki_2008.tex index 8a3174e..35aeade 100644 --- a/posic/talks/helsinki_2008.tex +++ b/posic/talks/helsinki_2008.tex @@ -202,7 +202,7 @@ \begin{slide} {\large\bf - Motivation / Introduction + Supposed Si to 3C-SiC conversion } \small @@ -358,33 +358,33 @@ \begin{minipage}[t]{4.3cm} \underline{Tetrahedral}\\ - $E_f=3.41\, eV$\\ + $E_f=3.41$ eV\\ \includegraphics[width=3.8cm]{si_self_int_tetra_0.eps} \end{minipage} \begin{minipage}[t]{4.3cm} \underline{110 dumbbell}\\ - $E_f=4.39\, eV$\\ + $E_f=4.39$ eV\\ \includegraphics[width=3.8cm]{si_self_int_dumbbell_0.eps} \end{minipage} \begin{minipage}[t]{4.3cm} \underline{Hexagonal} \hspace{4pt} \href{../video/si_self_int_hexa.avi}{$\rhd$}\\ - $E_f^{\star}\approx4.48\, eV$ (unstable!)\\ + $E_f^{\star}\approx4.48$ eV (unstable!)\\ \includegraphics[width=3.8cm]{si_self_int_hexa_0.eps} \end{minipage} \underline{Random insertion} \begin{minipage}{4.3cm} - $E_f=3.97\, eV$\\ + $E_f=3.97$ eV\\ \includegraphics[width=3.8cm]{si_self_int_rand_397_0.eps} \end{minipage} \begin{minipage}{4.3cm} - $E_f=3.75\, eV$\\ + $E_f=3.75$ eV\\ \includegraphics[width=3.8cm]{si_self_int_rand_375_0.eps} \end{minipage} \begin{minipage}{4.3cm} - $E_f=3.56\, eV$\\ + $E_f=3.56$ eV\\ \includegraphics[width=3.8cm]{si_self_int_rand_356_0.eps} \end{minipage} @@ -400,18 +400,18 @@ \begin{minipage}[t]{4.3cm} \underline{Tetrahedral}\\ - $E_f=2.67\, eV$\\ + $E_f=2.67$ eV\\ \includegraphics[width=3.8cm]{c_in_si_int_tetra_0.eps} \end{minipage} \begin{minipage}[t]{4.3cm} \underline{110 dumbbell}\\ - $E_f=1.76\, eV$\\ + $E_f=1.76$ eV\\ \includegraphics[width=3.8cm]{c_in_si_int_dumbbell_0.eps} \end{minipage} \begin{minipage}[t]{4.3cm} \underline{Hexagonal} \hspace{4pt} \href{../video/c_in_si_int_hexa.avi}{$\rhd$}\\ - $E_f^{\star}\approx5.6\, eV$ (unstable!)\\ + $E_f^{\star}\approx5.6$ eV (unstable!)\\ \includegraphics[width=3.8cm]{c_in_si_int_hexa_0.eps} \end{minipage} @@ -420,27 +420,58 @@ \footnotesize \begin{minipage}[t]{3.3cm} - $E_f=0.47\, eV$\\ + $E_f=0.47$ eV\\ \includegraphics[width=3.3cm]{c_in_si_int_001db_0.eps} \begin{picture}(0,0)(-15,-3) - 001 dumbbell + 100 dumbbell \end{picture} \end{minipage} \begin{minipage}[t]{3.3cm} - $E_f=1.62\, eV$\\ + $E_f=1.62$ eV\\ \includegraphics[width=3.2cm]{c_in_si_int_rand_162_0.eps} \end{minipage} \begin{minipage}[t]{3.3cm} - $E_f=2.39\, eV$\\ + $E_f=2.39$ eV\\ \includegraphics[width=3.1cm]{c_in_si_int_rand_239_0.eps} \end{minipage} \begin{minipage}[t]{3.0cm} - $E_f=3.41\, eV$\\ + $E_f=3.41$ eV\\ \includegraphics[width=3.3cm]{c_in_si_int_rand_341_0.eps} \end{minipage} \end{slide} +\begin{slide} + + {\large\bf + Results + } - <100> dumbbell configuration + + \vspace{8pt} + + \small + + \begin{minipage}{4cm} + \begin{itemize} + \item $E_f=0.47$ eV + \item Very often observed + \item Most energetically\\ + favorable configuration + \item Experimental\\ + evidence [6] + \end{itemize} + \vspace{24pt} + {\tiny + [6] G. D. Watkins and K. L. Brower,\\ + Phys. Rev. Lett. 36 (1976) 1329. + } + \end{minipage} + \begin{minipage}{8cm} + \includegraphics[width=9cm]{100-c-si-db_s.eps} + \end{minipage} + +\end{slide} + \begin{slide} {\large\bf @@ -501,20 +532,50 @@ Results } - SiC precipitation runs - \footnotesize - \begin{minipage}[b]{6.9cm} - \includegraphics[width=6.3cm]{../plot/sic_prec_energy.ps} - \includegraphics[width=6.3cm]{../plot/sic_prec_temp.ps} + \includegraphics[width=6.3cm]{pc_si-c_c-c.eps} + \includegraphics[width=6.3cm]{pc_si-si.eps} + + \begin{minipage}[t]{6.3cm} + \tiny + \begin{itemize} + \item C-C peak at 0.15 nm similar to next neighbour distance of graphite + or diamond\\ + $\Rightarrow$ Formation of strong C-C bonds + (almost only for high C concentrations) + \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC + \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\ + (due to concatenated, differently oriented + <100> dumbbell interstitials) + \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\ + and a decrease at regular distances\\ + (no clear peak, + interval of enhanced g(r) corresponds to C-C peak width) + \end{itemize} \end{minipage} - \begin{minipage}[b]{5.5cm} - \begin{itemize} - \item {\color{red} Total simulation volume} - \item {\color{green} Volume of minimal SiC precipitation} - \item {\color{blue} Volume of necessary amount of Si} - \end{itemize} - \vspace{40pt} - \includegraphics[width=6.3cm]{../plot/foo150.ps} + \begin{minipage}[t]{6.3cm} + \tiny + \begin{itemize} + \item Low C concentration (i.e. $V_1$): + The <100> dumbbell configuration + \begin{itemize} + \item is identified to stretch the Si-Si next neighbour distance + to 0.3 nm + \item is identified to contribute to the Si-C peak at 0.19 nm + \item explains further C-Si peaks (dashed vertical lines) + \end{itemize} + $\Rightarrow$ C atoms are first elements arranged at distances + expected for 3C-SiC\\ + $\Rightarrow$ C atoms pull the Si atoms into the right + configuration at a later stage + \item High C concentration (i.e. $V_2$ and $V_3$): + \begin{itemize} + \item High amount of damage introduced into the system + \item Short range order observed but almost no long range order + \end{itemize} + $\Rightarrow$ Start of amorphous SiC-like phase formation\\ + $\Rightarrow$ Higher temperatures required for proper SiC formation + \end{itemize} \end{minipage} \end{slide} -- 2.20.1