From bfb28f839680198a55dc103169b09faa107bff88 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 27 Jun 2011 15:44:55 +0200 Subject: [PATCH] short vers ... --- bibdb/bibdb.bib | 64 ++++++++++++++++++++++++------------------------- 1 file changed, 32 insertions(+), 32 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 5fe3369..b9c9742 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -108,7 +108,7 @@ title = "Effect of Carbon on the Lattice Parameter of Silicon", publisher = "AIP", year = "1968", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "39", number = "9", pages = "4365--4368", @@ -1088,7 +1088,7 @@ silicon", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "6", pages = "3815--3820", @@ -1228,7 +1228,7 @@ silicon", publisher = "AIP", year = "1984", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "45", number = "3", pages = "268--269", @@ -1248,7 +1248,7 @@ Ge[sup + ] and {C}[sup + ] implantation", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "57", number = "22", pages = "2345--2347", @@ -1267,7 +1267,7 @@ title = "Metastable SiGe{C} formation by solid phase epitaxy", publisher = "AIP", year = "1993", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "63", number = "20", pages = "2786--2788", @@ -1288,7 +1288,7 @@ strained layer superlattices", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "22", pages = "2758--2760", @@ -2150,7 +2150,7 @@ off-axis Si substrates", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "51", number = "11", pages = "823--825", @@ -2208,7 +2208,7 @@ vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1990", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "56", number = "15", pages = "1442--1444", @@ -2229,7 +2229,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "64", number = "5", pages = "2672--2679", @@ -2273,7 +2273,7 @@ substrates", publisher = "AIP", year = "1988", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "63", number = "8", pages = "2645--2650", @@ -2295,7 +2295,7 @@ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers", publisher = "AIP", year = "1991", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "59", number = "3", pages = "333--335", @@ -2388,7 +2388,7 @@ level using surface superstructures", publisher = "AIP", year = "1996", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "68", number = "9", pages = "1204--1206", @@ -2540,7 +2540,7 @@ title = "High-temperature ion beam synthesis of cubic Si{C}", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "67", number = "6", pages = "2908--2912", @@ -2600,7 +2600,7 @@ implanted boron into silicon", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "7", pages = "416--418", @@ -2621,7 +2621,7 @@ profiles", publisher = "AIP", year = "1990", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "68", number = "12", pages = "6191--6198", @@ -2749,7 +2749,7 @@ Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "24", pages = "3033--3035", @@ -2838,7 +2838,7 @@ on Si(001) by adding small amounts of carbon", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "64", number = "25", pages = "3440--3442", @@ -2859,7 +2859,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "3", pages = "356--358", @@ -3082,7 +3082,7 @@ by Low-Temperature Chemical Vapor Deposition", author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and Yuichi Yoneyama and Akira Yamada and Makoto Konagai", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "41", number = "Part 1, No. 4B", pages = "2472--2475", @@ -3118,7 +3118,7 @@ y] layers on Si(001)", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "26", pages = "3356--3358", @@ -3140,7 +3140,7 @@ y]{C}[sub y] on Si(001)", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "80", number = "12", pages = "6711--6715", @@ -4415,7 +4415,7 @@ title = "Growth and Properties of beta-Si{C} Single Crystals", publisher = "AIP", year = "1966", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "37", number = "1", pages = "333--336", @@ -4488,7 +4488,7 @@ improved external quantum efficiency", publisher = "AIP", year = "1982", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "53", number = "10", pages = "6962--6967", @@ -4582,7 +4582,7 @@ single crystals by physical vapor transport", publisher = "AIP", year = "1998", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "72", number = "13", pages = "1632--1634", @@ -4600,7 +4600,7 @@ title = "Antiphase boundaries in epitaxially grown beta-Si{C}", publisher = "AIP", year = "1987", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "50", number = "4", pages = "221--223", @@ -4637,7 +4637,7 @@ title = "Step-flow epitaxial growth on two-domain surfaces", publisher = "AIP", year = "1996", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "79", number = "3", pages = "1423--1434", @@ -4655,7 +4655,7 @@ carbonization of silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "78", number = "3", pages = "2070--2073", @@ -4693,7 +4693,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1992", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "60", number = "7", pages = "824--826", @@ -4766,7 +4766,7 @@ molecular beam epitaxy", publisher = "AIP", year = "1994", - journal = "Applied Physics Letters", + journal = "Appl. Phys. Lett.", volume = "65", number = "22", pages = "2851--2853", @@ -4871,7 +4871,7 @@ title = "Effect of {H} on Si molecular-beam epitaxy", publisher = "AIP", year = "1993", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "74", number = "11", pages = "6615--6618", @@ -4929,7 +4929,7 @@ title = "Defects in Carbon-Implanted Silicon", author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru Fukuoka and Haruo Saito", - journal = "Japanese Journal of Applied Physics", + journal = "Japanese J. Appl. Phys.", volume = "21", number = "Part 1, No. 2", pages = "399--400", @@ -4967,7 +4967,7 @@ high-dose carbon ion implantation in silicon", publisher = "AIP", year = "1995", - journal = "Journal of Applied Physics", + journal = "J. Appl. Phys.", volume = "77", number = "7", pages = "2978--2984", -- 2.20.1