From c7aa03042c81aa1cb8b0a0b5dd1deff45282c9a2 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 19 Oct 2009 19:19:54 +0200 Subject: [PATCH] foo --- posic/thesis/intro.tex | 13 ++++++------- 1 file changed, 6 insertions(+), 7 deletions(-) diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex index 3f0eed8..9cf3c41 100644 --- a/posic/thesis/intro.tex +++ b/posic/thesis/intro.tex @@ -5,15 +5,14 @@ The high electron mobility and saturation drift velocity as well as the high ban Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS), both as structural material and as a coating layer \cite{sarro00,park98}. Its radiation hardness allows the operation as a first wall material in nuclear reactors \cite{giancarli98} and as electronic devices in space \cite{capano97}. - The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality. -Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough. - -New means: Ion beam synthesis (IBS) of burried SiC layers ... -\\ +Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,fissel95}, available wafer dimensions and crystal qualities are not yet considered sufficient enough. -Model of precipitation ... -\\ +Another promising alternative to fabricate SiC is ion beam synthesis (IBS). +High-dose carbon implantation into silicon with subsequent annealing results in the formation of buried epitaxial SiC layers in topotactic relationship with the silicon matrix \cite{borders71,reeson87}. +A two-temperature implantation technique was proposed to achieve single crytalline SiC layers and a sharp SiC/Si interface \cite{lindner99,lindner01,lindner02}. +Hier Ueberleitung rein ... +To observe the nucleation of SiC nanocrystals in crystalline silicon (c-Si) elevated temperatures and stoichiometric doses exceeding the solubility limit of carbon in silicon \cite{scace59} are required. Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest... \\ -- 2.20.1