From ca0271eb3274a9cb093834b4c921880d886353bf Mon Sep 17 00:00:00 2001 From: hackbard Date: Fri, 9 Jul 2010 20:47:20 +0200 Subject: [PATCH] more intro --- posic/publications/c_defects_in_si.tex | 8 +++----- 1 file changed, 3 insertions(+), 5 deletions(-) diff --git a/posic/publications/c_defects_in_si.tex b/posic/publications/c_defects_in_si.tex index 6386eea..94438bc 100644 --- a/posic/publications/c_defects_in_si.tex +++ b/posic/publications/c_defects_in_si.tex @@ -43,13 +43,11 @@ Silicon carbide (SiC) has a number of remarkable physical and chemical propertie The wide band gap semiconductor (2.3 eV - 3.3 eV) exhibiting a high breakdown field, saturated electron drift velocity and thermal conductivity in conjunction with its unique thermal and mechanical stability as well as radiation hardness is a suitable material for high-temperature, high-frequency and high-power devices\cite{wesch96}, which are moreover deployable in harsh environments\cite{capano97}. % there are different polytpes with different properties and 3c-sic in special SiC, which forms fourfold coordinated covalent bonds, tends to crystallize into many different modifications, which solely differ in the one-dimensional stacking sequence of identical, close-packed SiC bilayers\cite{fischer90}. -Different polytypes exhibit different properties, where the only cubic phase (3C-SiC) shows increased values for the thermal conductivity and breakdown field compared to other polytypes\cite{wesch96}, which is of special interest for highly efficient and high-power electronic device applications. +Different polytypes exhibit different properties, in which the cubic phase (3C-SiC) shows increased values for the thermal conductivity and breakdown field compared to other polytypes\cite{wesch96}, which is thus most effective for high-performance electronic devices. % (thin films of) 3c-sic can be produced by ibs -Next to epitaxial layer growth by chemical vapor deposition\cite{powell90} and molecular beam epitaxy\cite{mbe}, ion beam synthesis (IBS) constitutes a promising method to produce 3C-SiC epitaxial layers of high quality in silicon\cite{ibs}. - - - +Next to 3C-SiC epitaxial layer growth by chemical vapor deposition (CVD) on 6H-SiC substrates\cite{powell90} or molecular beam epitaxy on silicon\cite{} as well as 6H-SiC\cite{}, ion beam synthesis (IBS) constitutes a promising method to produce 3C-SiC epitaxial layers of high quality in crystalline silicon\cite{lindner02} (c-Si). +Highly energetic carbon ions are ... The relevant structures are with $\approx$ 20000 atoms/nanocrystal way too large to be completely be described with high accuracy quantum mechanical methods. Modelling the processes described above require the use of less accurate methods, like e.g. classical -- 2.20.1