From cb6908b0460905b4a567252e29c18146d3359912 Mon Sep 17 00:00:00 2001 From: hackbard Date: Sat, 17 Oct 2009 02:02:37 +0200 Subject: [PATCH] we checkin --- posic/thesis/intro.tex | 2 +- 1 file changed, 1 insertion(+), 1 deletion(-) diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex index 13ccf5d..3f0eed8 100644 --- a/posic/thesis/intro.tex +++ b/posic/thesis/intro.tex @@ -7,7 +7,7 @@ Its radiation hardness allows the operation as a first wall material in nuclear The realization of silicon carbide based applications demands for reasonable sized wafers of high crystalline quality. -Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{}, available wafer dimensions and crystal qualities are not yet considered sufficient enough. +Despite the tremendous progress achieved in the fabrication of high purity SiC employing techniques like the modified Lely process for bulk crystal growth \cite{tairov78,tsvetkov98} or chemical vapour deposition (CVD) and molecular beam epitaxy (MBE) for homo- and heteroepitaxial growth \cite{kimoto93,powell90,mbe_refs}, available wafer dimensions and crystal qualities are not yet considered sufficient enough. New means: Ion beam synthesis (IBS) of burried SiC layers ... \\ -- 2.20.1