From cf7d6d5774df6c983b95e7fe919980d9d5c16c4a Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 12 Jul 2010 18:40:49 +0200
Subject: [PATCH] more literature: interfaces, si in sio2, sic cvd etc ...

---
 bibdb/bibdb.bib | 108 +++++++++++++++++++++++++++++++++++++++++++++++-
 1 file changed, 106 insertions(+), 2 deletions(-)

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 10f13b5..5c711f6 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -369,6 +369,40 @@
   notes =        "si self interstitial, tbmd, virial stress",
 }
 
+@Article{al-mushadani03,
+  title =        "Free-energy calculations of intrinsic point defects in
+                 silicon",
+  author =       "O. K. Al-Mushadani and R. J. Needs",
+  journal =      "Phys. Rev. B",
+  volume =       "68",
+  number =       "23",
+  pages =        "235205",
+  numpages =     "8",
+  year =         "2003",
+  month =        dec,
+  doi =          "10.1103/PhysRevB.68.235205",
+  publisher =    "American Physical Society",
+  notes =        "formation energies of intrinisc point defects in
+                 silicon, si self interstitials",
+}
+
+@Article{ma10,
+  title =        "Ab initio study of self-diffusion in silicon over a
+                 wide temperature range: Point defect states and
+                 migration mechanisms",
+  author =       "Shangyi Ma and Shaoqing Wang",
+  journal =      "Phys. Rev. B",
+  volume =       "81",
+  number =       "19",
+  pages =        "193203",
+  numpages =     "4",
+  year =         "2010",
+  month =        may,
+  doi =          "10.1103/PhysRevB.81.193203",
+  publisher =    "American Physical Society",
+  notes =        "si self interstitial diffusion + refs",
+}
+
 @Article{gao2001,
   title =        "Ab initio and empirical-potential studies of defect
                  properties in $3{C}-Si{C}$",
@@ -1027,6 +1061,26 @@
   author =       "Yu. M. Tairov and V. F. Tsvetkov",
 }
 
+@Article{nishino83,
+  author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+                 Will",
+  collaboration = "",
+  title =        "Production of large-area single-crystal wafers of
+                 cubic Si{C} for semiconductor devices",
+  publisher =    "AIP",
+  year =         "1983",
+  journal =      "Applied Physics Letters",
+  volume =       "42",
+  number =       "5",
+  pages =        "460--462",
+  keywords =     "silicon carbides; layers; chemical vapor deposition;
+                 monocrystals",
+  URL =          "http://link.aip.org/link/?APL/42/460/1",
+  doi =          "10.1063/1.93970",
+  notes =        "cvd of 3c-sic on si, first time carbonization, sic
+                 buffer layer",
+}
+
 @Article{powell87,
   author =       "J. Anthony Powell and Lawrence G. Matus and Maria A.
                  Kuczmarski",
@@ -1061,7 +1115,7 @@
                  VAPOR DEPOSITION",
   URL =          "http://link.aip.org/link/?JAP/73/726/1",
   doi =          "10.1063/1.353329",
-  notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic"
+  notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
 }
 
 @Article{powell90,
@@ -1083,7 +1137,7 @@
                  PHASE EPITAXY",
   URL =          "http://link.aip.org/link/?APL/56/1353/1",
   doi =          "10.1063/1.102512",
-  notes =        "cvd of 3c-sic on 6h-sic"
+  notes =        "cvd of 3c-sic on 6h-sic",
 }
 
 @Article{yuan95,
@@ -1667,3 +1721,53 @@
   notes =        "3c-sic crystal growth, sic fabrication + links,
                  metastable",
 }
+
+@Article{feynman39,
+  title =        "Forces in Molecules",
+  author =       "R. P. Feynman",
+  journal =      "Phys. Rev.",
+  volume =       "56",
+  number =       "4",
+  pages =        "340--343",
+  numpages =     "3",
+  year =         "1939",
+  month =        aug,
+  doi =          "10.1103/PhysRev.56.340",
+  publisher =    "American Physical Society",
+  notes =        "hellmann feynman forces",
+}
+
+@Article{buczko00,
+  title =        "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+                 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+                 their Contrasting Properties",
+  author =       "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+                 T. Pantelides",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "84",
+  number =       "5",
+  pages =        "943--946",
+  numpages =     "3",
+  year =         "2000",
+  month =        jan,
+  doi =          "10.1103/PhysRevLett.84.943",
+  publisher =    "American Physical Society",
+  notes =        "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+  title =        "Atomistic simulation of the interface structure of Si
+                 nanocrystals embedded in amorphous silica",
+  author =       "Flyura Djurabekova and Kai Nordlund",
+  journal =      "Phys. Rev. B",
+  volume =       "77",
+  number =       "11",
+  pages =        "115325",
+  numpages =     "7",
+  year =         "2008",
+  month =        mar,
+  doi =          "10.1103/PhysRevB.77.115325",
+  publisher =    "American Physical Society",
+  notes =        "nc-si in sio2, interface energy, nc construction,
+                 angular distribution, coordination",
+}
-- 
2.20.1