From d24eaf029e336a6d041c90f8f1a229708fe8fac2 Mon Sep 17 00:00:00 2001 From: hackbard Date: Fri, 16 Oct 2009 00:06:58 +0200 Subject: [PATCH] chem inertness + mems (fill with refs!) --- posic/thesis/intro.tex | 1 + 1 file changed, 1 insertion(+) diff --git a/posic/thesis/intro.tex b/posic/thesis/intro.tex index d88e921..1087110 100644 --- a/posic/thesis/intro.tex +++ b/posic/thesis/intro.tex @@ -2,6 +2,7 @@ Silicon carbide (SiC) has a number of remarkable physical and chemical properties that make it a promising new material in various fields of applications. The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}. +Due to the large Si--C bonding energy SiC is a hard and chemical inert material suitable for applications under extreme conditions and capable for microelectromechanical systems (MEMS). \\ -- 2.20.1