From d43172cc1e1bce86e8e89a5e11e912cc4a9a67d2 Mon Sep 17 00:00:00 2001 From: hackbard Date: Fri, 20 Aug 2010 01:38:14 +0200 Subject: [PATCH] few typos --- posic/publications/defect_combos.tex | 5 +++-- 1 file changed, 3 insertions(+), 2 deletions(-) diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex index 1b7752d..7fbb9fa 100644 --- a/posic/publications/defect_combos.tex +++ b/posic/publications/defect_combos.tex @@ -75,9 +75,10 @@ The ions and cell shape were allowed to change in order to realize a constant pr Ionic relaxation was realized by the conjugate gradient algorithm. Spin polarization has been fully accounted for. -Migration and recombination pathways have been ivestigated utilizing the constraint conjugate gradient relaxation technique (CRT)\cite{kaukonen98}. +Migration and recombination pathways have been investigated utilizing the constraint conjugate gradient relaxation technique (CRT)\cite{kaukonen98}. The defect formation energy $E-N_{\text{Si}}\mu_{\text{Si}}-N_{\text{C}}\mu_{\text{C}}$ is defined by chosing SiC as a particle reservoir for the C impurity, i.e. the chemical potentials are determined by the cohesive energies of a perfect Si and SiC supercell after ionic relaxation. -The binding energy of a defect pair is given by the difference of the formation energy of the complex and the sum of the two separated defect configurations, i.e. energetically favorable configurations show binding energies below zero and non-interacting isolated defects would result in a binding energy of zero. +The binding energy of a defect pair is given by the difference of the formation energy of the complex and the sum of the two separated defect configurations. +Accordingly, energetically favorable configurations show binding energies below zero while non-interacting isolated defects result in a binding energy of zero. \section{Results} -- 2.20.1