From f91532056384af04e0be524657bee21d7e1de967 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 14 Jul 2010 20:22:12 +0200 Subject: [PATCH] new items --- bibdb/bibdb.bib | 173 ++++++++++++++++++++++++++++++++++++++++++++++-- 1 file changed, 167 insertions(+), 6 deletions(-) diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index c5f22cf..1c174a1 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -224,7 +224,7 @@ year = "1995", } -@Article{tersoff89, +@Article{brenner89, title = "Relationship between the embedded-atom method and Tersoff potentials", author = "Donald W. Brenner", @@ -650,6 +650,37 @@ precipitate", } +@InProceedings{werner96, + author = "P. Werner and R. Koegler and W. Skorupa and D. + Eichler", + booktitle = "Ion Implantation Technology. Proceedings of the 11th + International Conference on", + title = "{TEM} investigation of {C}-Si defects in carbon + implanted silicon", + year = "1996", + month = jun, + volume = "", + number = "", + pages = "675--678", + keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C + atom/radiation induced defect interaction;C depth + distribution;C precipitation;C-Si defects;C-Si + dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high + energy ion implantation;ion implantation;metastable + agglomerates;microdefects;positron annihilation + spectroscopy;rapid thermal annealing;secondary ion mass + spectrometry;vacancy clusters;buried + layers;carbon;elemental semiconductors;impurity-defect + interactions;ion implantation;positron + annihilation;precipitation;rapid thermal + annealing;secondary ion mass + spectra;silicon;transmission electron + microscopy;vacancies (crystal);", + doi = "10.1109/IIT.1996.586497", + ISSN = "", + notes = "c-si agglomerates dumbbells", +} + @Article{strane94, author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and J. K. Watanabe and J. W. Mayer", @@ -762,11 +793,11 @@ number = "1-4", pages = "528--533", year = "1999", - note = "", ISSN = "0168-583X", doi = "DOI: 10.1016/S0168-583X(98)00787-3", URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85", author = "J. K. N. Lindner and B. Stritzker", + notes = "3c-sic precipitation model, c-si dimers (dumbbells)", } @Article{lindner01, @@ -797,6 +828,24 @@ notes = "ibs, burried sic layers", } +@Article{ito04, + title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its + application in buffer layer for Ga{N} epitaxial + growth", + journal = "Applied Surface Science", + volume = "238", + number = "1-4", + pages = "159--164", + year = "2004", + note = "APHYS'03 Special Issue", + ISSN = "0169-4332", + doi = "DOI: 10.1016/j.apsusc.2004.05.199", + URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c", + author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase + and S. Nishio and K. Yasuda and Y. Ishigami", + notes = "gan on 3c-sic", +} + @Article{alder57, author = "B. J. Alder and T. E. Wainwright", title = "Phase Transition for a Hard Sphere System", @@ -1080,7 +1129,7 @@ notes = "cvd of 3c-sic on si, sic buffer layer", } -@Article{nishino:4889, +@Article{nishino87, author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono and Hiroyuki Matsunami", collaboration = "", @@ -1187,12 +1236,30 @@ number = "1-2", pages = "72--80", year = "1995", - notes = "solid source mbe", ISSN = "0022-0248", doi = "DOI: 10.1016/0022-0248(95)00170-0", URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98", author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter and W. Richter", + notes = "solid source mbe of 3c-sic on si and 6h-sic", +} + +@Article{fissel95_apl, + author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter", + collaboration = "", + title = "Low-temperature growth of Si{C} thin films on Si and + 6{H}--Si{C} by solid-source molecular beam epitaxy", + publisher = "AIP", + year = "1995", + journal = "Applied Physics Letters", + volume = "66", + number = "23", + pages = "3182--3184", + keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; + RHEED; NUCLEATION", + URL = "http://link.aip.org/link/?APL/66/3182/1", + doi = "10.1063/1.113716", + notes = "mbe 3c-sic on si and 6h-sic", } @Article{borders71, @@ -1207,8 +1274,9 @@ number = "11", pages = "509--511", URL = "http://link.aip.org/link/?APL/18/509/1", - notes = "first time sic by ibs", doi = "10.1063/1.1653516", + notes = "first time sic by ibs, follow cites for precipitation + ideas", } @Article{reeson87, @@ -1551,6 +1619,39 @@ publisher = "American Physical Society", } +@Article{brenner90, + title = "Empirical potential for hydrocarbons for use in + simulating the chemical vapor deposition of diamond + films", + author = "Donald W. Brenner", + journal = "Phys. Rev. B", + volume = "42", + number = "15", + pages = "9458--9471", + numpages = "13", + year = "1990", + month = nov, + doi = "10.1103/PhysRevB.42.9458", + publisher = "American Physical Society", + notes = "brenner hydro carbons", +} + +@Article{bazant96, + title = "Modeling of Covalent Bonding in Solids by Inversion of + Cohesive Energy Curves", + author = "Martin Z. Bazant and Efthimios Kaxiras", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4370--4373", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4370", + publisher = "American Physical Society", + notes = "first si edip", +} + @Article{bazant97, title = "Environment-dependent interatomic potential for bulk silicon", @@ -1565,6 +1666,7 @@ month = oct, doi = "10.1103/PhysRevB.56.8542", publisher = "American Physical Society", + notes = "second si edip", } @Article{justo98, @@ -1581,6 +1683,7 @@ month = aug, doi = "10.1103/PhysRevB.58.2539", publisher = "American Physical Society", + notes = "latest si edip", } @Article{parcas_md, @@ -1789,7 +1892,7 @@ angular distribution, coordination", } -@Article{wen:073522, +@Article{wen09, author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J. W. Liang and J. Zou", collaboration = "", @@ -1885,3 +1988,61 @@ author = "J. Hornstra", notes = "dislocations in diamond lattice", } + +@Article{eichhorn99, + author = "F. Eichhorn and N. Schell and W. Matz and R. + K{\"{o}}gler", + collaboration = "", + title = "Strain and Si{C} particle formation in silicon + implanted with carbon ions of medium fluence studied by + synchrotron x-ray diffraction", + publisher = "AIP", + year = "1999", + journal = "Journal of Applied Physics", + volume = "86", + number = "8", + pages = "4184--4187", + keywords = "silicon; carbon; elemental semiconductors; chemical + interdiffusion; ion implantation; X-ray diffraction; + precipitation; semiconductor doping", + URL = "http://link.aip.org/link/?JAP/86/4184/1", + doi = "10.1063/1.371344", + notes = "sic conversion by ibs, detected substitutional + carbon", +} + +@Article{eichhorn02, + author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H. + Metzger and W. Matz and R. K{\"{o}}gler", + collaboration = "", + title = "Structural relation between Si and Si{C} formed by + carbon ion implantation", + publisher = "AIP", + year = "2002", + journal = "Journal of Applied Physics", + volume = "91", + number = "3", + pages = "1287--1292", + keywords = "silicon compounds; wide band gap semiconductors; ion + implantation; annealing; X-ray scattering; transmission + electron microscopy", + URL = "http://link.aip.org/link/?JAP/91/1287/1", + doi = "10.1063/1.1428105", + notes = "3c-sic alignement to si host in ibs depending on + temperature, might explain c int to c sub trafo", +} + +@Article{lucas10, + author = "G Lucas and M Bertolus and L Pizzagalli", + title = "An environment-dependent interatomic potential for + silicon carbide: calculation of bulk properties, + high-pressure phases, point and extended defects, and + amorphous structures", + journal = "Journal of Physics: Condensed Matter", + volume = "22", + number = "3", + pages = "035802", + URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802", + year = "2010", + notes = "edip sic", +} -- 2.20.1