2 % bibliography database
5 % molecular dynamics: basics / potential
8 author = {Paul Erhart and Karsten Albe},
9 title = {Analytical potential for atomistic simulations of silicon, carbon,
13 journal = {Phys. Rev. B},
19 notes = {alble reparametrization, analytical bond oder potential (ABOP)},
20 keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
21 wide band gap semiconductors; elasticity; enthalpy;
22 point defects; crystallographic shear; atomic forces},
23 url = {http://link.aps.org/abstract/PRB/v71/e035211},
24 doi = {10.1103/PhysRevB.71.035211}
28 title = {Modeling the metal-semiconductor interaction:
29 Analytical bond-order potential for platinum-carbon},
30 author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
31 journal = {Phys. Rev. B},
38 doi = {10.1103/PhysRevB.65.195124},
39 publisher = {American Physical Society},
40 notes = {derivation of albe bond order formalism},
44 title = {Stress relaxation in $a-Si$ induced by ion bombardment},
45 author = {M. Koster, H. M. Urbassek},
46 journal = {Phys. Rev. B},
49 pages = {11219--11224},
53 doi = {10.1103/PhysRevB.62.11219},
54 publisher = {American Physical Society},
55 notes = {virial derivation for 3-body tersoff potential}
59 title = {Direct simulation of ion-beam-induced stressing
60 and amorphization of silicon},
61 author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
62 journal = {Phys. Rev. B},
65 pages = {12610--12616},
69 doi = {10.1103/PhysRevB.60.12610},
70 publisher = {American Physical Society},
71 notes = {virial derivation for 3-body tersoff potential}
74 % molecular dynamics: applications
77 title = {Molecular-dynamics study of self-interstitials in silicon},
78 author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
79 journal = {Phys. Rev. B},
86 doi = {10.1103/PhysRevB.35.9552},
87 publisher = {American Physical Society},
88 notes = {selft-interstitials in silicon, stillinger-weber,
89 calculation of defect formation energy, defect interstitial types}
93 title = {Extended interstitials in silicon and germanium},
94 author = {H. R. Schober},
95 journal = {Phys. Rev. B},
98 pages = {13013--13015},
102 doi = {10.1103/PhysRevB.39.13013},
103 publisher = {American Physical Society},
104 notes = {stillinger-weber silicon 110 stable and metastable dumbbell
111 title = {Intrinsic point defects in crystalline silicon:
112 Tight-binding molecular dynamics studiesof self-diffusion,
113 interstitial-vacancy recombination, and formation volumes},
114 author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
115 journal = {Phys. Rev. B},
118 pages = {14279--14289},
122 doi = {10.1103/PhysRevB.55.14279},
123 publisher = {American Physical Society},
124 notes = {si self interstitial, diffusion, tbmd}
128 title = {Tight-binding theory of native point defects in silicon},
129 author = {L. Colombo},
130 journal = {Annu. Rev. Mater. Res.},
135 doi = {10.1146/annurev.matsci.32.111601.103036},
136 publisher = {Annual Reviews},
137 notes = {si self interstitial, tbmd, virial stress}
143 title = {Ab initio and empirical-potential studies of defect properties
145 author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
146 journal = {Phys. Rev. B},
153 doi = {10.1103/PhysRevB.64.245208},
154 publisher = {American Physical Society},
155 notes = {defects in 3c-sic}
161 title = {Calculations of Silicon Self-Interstitial Defects},
162 author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
163 Itoh, S. and Ihara, S. },
164 journal = {Phys. Rev. Lett.},
167 pages = {2351--2354},
171 doi = {10.1103/PhysRevLett.83.2351},
172 publisher = {American Physical Society},
173 notes = {nice images of the defects}
176 @Article{PhysRevB.50.7439,
177 title = {Identification of the migration path of interstitial carbon
179 author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
180 journal = {Phys. Rev. B},
183 pages = {7439--7442},
187 doi = {10.1103/PhysRevB.50.7439},
188 publisher = {American Physical Society},
189 notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
195 title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
196 author = {Watkins, G. D. and Brower, K. L.},
197 journal = {Phys. Rev. Lett.},
200 pages = {1329--1332},
204 doi = {10.1103/PhysRevLett.36.1329},
205 publisher = {American Physical Society},
206 notes = {epr observations of 100 interstitial carbon atom in silicon}
209 @Article{PhysRevB.42.5759,
210 title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
211 author = {L. W. Song, G. D. Watkins},
212 journal = {Phys. Rev. B},
215 pages = {5759--5764},
219 doi = {10.1103/PhysRevB.42.5759},
220 publisher = {American Physical Society}
223 % my own publications
225 @article{zirkelbach2007,
226 title = {Monte Carlo simulation study of a selforganisation process
227 leading to ordered precipitate structures},
228 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
229 journal = {Nucl. instr. and Meth. B},
236 doi = {doi:10.1016/j.nimb.2006.12.118},
237 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
240 @article{zirkelbach2006,
241 title = {Monte-Carlo simulation study of the self-organization of nanometric
242 amorphous precipitates in regular arrays during ion irradiation},
243 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
244 journal = {Nucl. instr. and Meth. B},
251 doi = {doi:10.1016/j.nimb.2005.08.162},
252 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
255 @article{zirkelbach2005,
256 title = {Modelling of a selforganization process leading to periodic arrays
257 of nanometric amorphous precipitates by ion irradiation},
258 author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
259 journal = {Comp. Mater. Sci.},
266 doi = {doi:10.1016/j.commatsci.2004.12.016},
267 publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}