}
@Article{zirkelbach11,
- title = "Combined ab initio and classical potential simulation
- study on the silicon carbide precipitation in silicon",
- journal = "accepted for publication in Phys. Rev. B",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
abstract = "Atomistic simulations on the silicon carbide
precipitation in bulk silicon employing both, classical
potential and first-principles methods are presented.
notes = "c int diffusion barrier",
}
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
}
@Article{parcas_md,
- title = "{PARCAS} molecular dynamics code",
+ journal = "{PARCAS} molecular dynamics code",
author = "K. Nordlund",
year = "2008",
}
title = "The Fitting of Pseudopotentials to Experimental Data
and Their Subsequent Application",
editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
- booktitle = "",
publisher = "Academic Press",
year = "1970",
volume = "24",
year = "1994",
publisher = "Suhrkamp",
}
+
+@Misc{attenberger03,
+ author = "Wilfried ATTENBERGER and Jörg LINDNER and Bernd
+ STRITZKER",
+ title = "A {METHOD} {FOR} {FORMING} {A} {LAYERED}
+ {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING}
+ {STRUCTURE}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ URL = "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}