\hline
& T & H & \hkl<1 0 0> DB & \hkl<1 1 0> DB & S & BC \\
\hline
-\multicolumn{6}{c}{Present study} \\
+Present study & & & & & & \\
{\textsc posic} & 6.09 & 9.05$^*$ & 3.88 & 5.18 & 0.75 & 5.59$^*$ \\
{\textsc vasp} & Unstable & Unstable & 3.72 & 4.16 & 1.95 & 4.66 \\
-\multicolumn{6}{c}{Other studies} \\
+Other studies & & & & & & \\
Tersoff \cite{tersoff90} & 3.8 & 6.7 & 4.6 & 5.9 & 1.6 & 5.3 \\
{\em Ab initio} \cite{dal_pino93,capaz94} & - & - & x & - & 1.89 & x+2.1 \\
\hline
In addition, the energy level diagram shows a net amount of two spin up electrons.
% todo smaller images, therefore add mo image
-% todo migration of \si{}!
-
\section{Migration of the carbon interstitial}
\label{subsection:100mig}
Si atoms 1 and 2, which form the initial DB, occupy Si lattice sites in the final configuration while Si atom 3 is transferred from a regular lattice site into the interstitial lattice.
These results support the above assumptions of an increased entropic contribution to structural formation involving C$_{\text{s}}$ to a greater extent.
+
+% todo migration of \si{}!
+
+
% kept for nostalgical reason!
%\section{Migration in systems of combined defects}