+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}