new items for prb intro

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 708f5aa..5b356b6 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -224,7 +224,7 @@
   year =         "1995",
 }
 
   year =         "1995",
 }
 

-@Article{tersoff89,
+@Article{brenner89,

   title =        "Relationship between the embedded-atom method and
                  Tersoff potentials",
   author =       "Donald W. Brenner",
   title =        "Relationship between the embedded-atom method and
                  Tersoff potentials",
   author =       "Donald W. Brenner",


@@ -325,7 +325,7 @@
                  tersoff",
 }
 
                  tersoff",
 }
 

-@Article{batra87,
+@Article{kitabatake00,

   title =        "Si{C}/Si heteroepitaxial growth",
   author =       "M. Kitabatake",
   journal =      "Thin Solid Films",
   title =        "Si{C}/Si heteroepitaxial growth",
   author =       "M. Kitabatake",
   journal =      "Thin Solid Films",


@@ -369,6 +369,40 @@
   notes =        "si self interstitial, tbmd, virial stress",
 }
 
   notes =        "si self interstitial, tbmd, virial stress",
 }
 

+@Article{al-mushadani03,
+  title =        "Free-energy calculations of intrinsic point defects in
+                 silicon",
+  author =       "O. K. Al-Mushadani and R. J. Needs",
+  journal =      "Phys. Rev. B",
+  volume =       "68",
+  number =       "23",
+  pages =        "235205",
+  numpages =     "8",
+  year =         "2003",
+  month =        dec,
+  doi =          "10.1103/PhysRevB.68.235205",
+  publisher =    "American Physical Society",
+  notes =        "formation energies of intrinisc point defects in
+                 silicon, si self interstitials",
+}
+
+@Article{ma10,
+  title =        "Ab initio study of self-diffusion in silicon over a
+                 wide temperature range: Point defect states and
+                 migration mechanisms",
+  author =       "Shangyi Ma and Shaoqing Wang",
+  journal =      "Phys. Rev. B",
+  volume =       "81",
+  number =       "19",
+  pages =        "193203",
+  numpages =     "4",
+  year =         "2010",
+  month =        may,
+  doi =          "10.1103/PhysRevB.81.193203",
+  publisher =    "American Physical Society",
+  notes =        "si self interstitial diffusion + refs",
+}
+

 @Article{gao2001,
   title =        "Ab initio and empirical-potential studies of defect
                  properties in $3{C}-Si{C}$",
 @Article{gao2001,
   title =        "Ab initio and empirical-potential studies of defect
                  properties in $3{C}-Si{C}$",


@@ -400,8 +434,8 @@
   doi =          "10.1103/PhysRevB.66.195214",
   publisher =    "American Physical Society",
   notes =        "c in c-si, diffusion, interstitial configuration +
   doi =          "10.1103/PhysRevB.66.195214",
   publisher =    "American Physical Society",
   notes =        "c in c-si, diffusion, interstitial configuration +

-                 links, interaction of carbon and silicon
-                 interstitials",
+                 links, interaction of carbon and silicon interstitials,
+                 tersoff suitability",

 }
 
 @Article{leung99,
 }
 
 @Article{leung99,


@@ -616,6 +650,37 @@
                  precipitate",
 }
 
                  precipitate",
 }
 

+@InProceedings{werner96,
+  author =       "P. Werner and R. Koegler and W. Skorupa and D.
+                 Eichler",
+  booktitle =    "Ion Implantation Technology. Proceedings of the 11th
+                 International Conference on",
+  title =        "{TEM} investigation of {C}-Si defects in carbon
+                 implanted silicon",
+  year =         "1996",
+  month =        jun,
+  volume =       "",
+  number =       "",
+  pages =        "675--678",
+  keywords =     "beta;-SiC precipitates;30 s;700 to 1300 C;C
+                 atom/radiation induced defect interaction;C depth
+                 distribution;C precipitation;C-Si defects;C-Si
+                 dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
+                 energy ion implantation;ion implantation;metastable
+                 agglomerates;microdefects;positron annihilation
+                 spectroscopy;rapid thermal annealing;secondary ion mass
+                 spectrometry;vacancy clusters;buried
+                 layers;carbon;elemental semiconductors;impurity-defect
+                 interactions;ion implantation;positron
+                 annihilation;precipitation;rapid thermal
+                 annealing;secondary ion mass
+                 spectra;silicon;transmission electron
+                 microscopy;vacancies (crystal);",
+  doi =          "10.1109/IIT.1996.586497",
+  ISSN =         "",
+  notes =        "c-si agglomerates dumbbells",
+}
+

 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",
 @Article{strane94,
   author =       "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
                  Picraux and J. K. Watanabe and J. W. Mayer",


@@ -728,11 +793,11 @@
   number =       "1-4",
   pages =        "528--533",
   year =         "1999",
   number =       "1-4",
   pages =        "528--533",
   year =         "1999",

-  note =         "",

   ISSN =         "0168-583X",
   doi =          "DOI: 10.1016/S0168-583X(98)00787-3",
   URL =          "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
   author =       "J. K. N. Lindner and B. Stritzker",
   ISSN =         "0168-583X",
   doi =          "DOI: 10.1016/S0168-583X(98)00787-3",
   URL =          "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
   author =       "J. K. N. Lindner and B. Stritzker",

+  notes =        "3c-sic precipitation model, c-si dimers (dumbbells)",

 }
 
 @Article{lindner01,
 }
 
 @Article{lindner01,


@@ -763,6 +828,24 @@
   notes =        "ibs, burried sic layers",
 }
 
   notes =        "ibs, burried sic layers",
 }
 

+@Article{ito04,
+  title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+                 application in buffer layer for Ga{N} epitaxial
+                 growth",
+  journal =      "Applied Surface Science",
+  volume =       "238",
+  number =       "1-4",
+  pages =        "159--164",
+  year =         "2004",
+  note =         "APHYS'03 Special Issue",
+  ISSN =         "0169-4332",
+  doi =          "DOI: 10.1016/j.apsusc.2004.05.199",
+  URL =          "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+  author =       "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+                 and S. Nishio and K. Yasuda and Y. Ishigami",
+  notes =        "gan on 3c-sic",
+}
+

 @Article{alder57,
   author =       "B. J. Alder and T. E. Wainwright",
   title =        "Phase Transition for a Hard Sphere System",
 @Article{alder57,
   author =       "B. J. Alder and T. E. Wainwright",
   title =        "Phase Transition for a Hard Sphere System",


@@ -1027,6 +1110,43 @@
   author =       "Yu. M. Tairov and V. F. Tsvetkov",
 }
 
   author =       "Yu. M. Tairov and V. F. Tsvetkov",
 }
 

+@Article{nishino83,
+  author =       "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+                 Will",
+  collaboration = "",
+  title =        "Production of large-area single-crystal wafers of
+                 cubic Si{C} for semiconductor devices",
+  publisher =    "AIP",
+  year =         "1983",
+  journal =      "Applied Physics Letters",
+  volume =       "42",
+  number =       "5",
+  pages =        "460--462",
+  keywords =     "silicon carbides; layers; chemical vapor deposition;
+                 monocrystals",
+  URL =          "http://link.aip.org/link/?APL/42/460/1",
+  doi =          "10.1063/1.93970",
+  notes =        "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino87,
+  author =       "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+                 and Hiroyuki Matsunami",
+  collaboration = "",
+  title =        "Epitaxial growth and electric characteristics of cubic
+                 Si{C} on silicon",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Journal of Applied Physics",
+  volume =       "61",
+  number =       "10",
+  pages =        "4889--4893",
+  URL =          "http://link.aip.org/link/?JAP/61/4889/1",
+  doi =          "10.1063/1.338355",
+  notes =        "cvd of 3c-sic on si, sic buffer layer, first time
+                 carbonization",
+}
+

 @Article{powell87,
   author =       "J. Anthony Powell and Lawrence G. Matus and Maria A.
                  Kuczmarski",
 @Article{powell87,
   author =       "J. Anthony Powell and Lawrence G. Matus and Maria A.
                  Kuczmarski",


@@ -1061,6 +1181,7 @@
                  VAPOR DEPOSITION",
   URL =          "http://link.aip.org/link/?JAP/73/726/1",
   doi =          "10.1063/1.353329",
                  VAPOR DEPOSITION",
   URL =          "http://link.aip.org/link/?JAP/73/726/1",
   doi =          "10.1063/1.353329",

+  notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",

 }
 
 @Article{powell90,
 }
 
 @Article{powell90,


@@ -1082,6 +1203,28 @@
                  PHASE EPITAXY",
   URL =          "http://link.aip.org/link/?APL/56/1353/1",
   doi =          "10.1063/1.102512",
                  PHASE EPITAXY",
   URL =          "http://link.aip.org/link/?APL/56/1353/1",
   doi =          "10.1063/1.102512",

+  notes =        "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{yuan95,
+  author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+                 Thokala and M. J. Loboda",
+  collaboration = "",
+  title =        "Reduced temperature growth of crystalline 3{C}-Si{C}
+                 films on 6{H}-Si{C} by chemical vapor deposition from
+                 silacyclobutane",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Journal of Applied Physics",
+  volume =       "78",
+  number =       "2",
+  pages =        "1271--1273",
+  keywords =     "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+                 EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+                 SPECTROPHOTOMETRY",
+  URL =          "http://link.aip.org/link/?JAP/78/1271/1",
+  doi =          "10.1063/1.360368",
+  notes =        "3c-sic on 6h-sic, cvd, reduced temperature",

 }
 
 @Article{fissel95,
 }
 
 @Article{fissel95,


@@ -1093,12 +1236,30 @@
   number =       "1-2",
   pages =        "72--80",
   year =         "1995",
   number =       "1-2",
   pages =        "72--80",
   year =         "1995",

-  notes =        "solid source mbe",

   ISSN =         "0022-0248",
   doi =          "DOI: 10.1016/0022-0248(95)00170-0",
   URL =          "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
   author =       "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
                  and W. Richter",
   ISSN =         "0022-0248",
   doi =          "DOI: 10.1016/0022-0248(95)00170-0",
   URL =          "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
   author =       "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
                  and W. Richter",

+  notes =        "solid source mbe of 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel95_apl,
+  author =       "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+  collaboration = "",
+  title =        "Low-temperature growth of Si{C} thin films on Si and
+                 6{H}--Si{C} by solid-source molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Applied Physics Letters",
+  volume =       "66",
+  number =       "23",
+  pages =        "3182--3184",
+  keywords =     "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+                 RHEED; NUCLEATION",
+  URL =          "http://link.aip.org/link/?APL/66/3182/1",
+  doi =          "10.1063/1.113716",
+  notes =        "mbe 3c-sic on si and 6h-sic",

 }
 
 @Article{borders71,
 }
 
 @Article{borders71,


@@ -1113,8 +1274,9 @@
   number =       "11",
   pages =        "509--511",
   URL =          "http://link.aip.org/link/?APL/18/509/1",
   number =       "11",
   pages =        "509--511",
   URL =          "http://link.aip.org/link/?APL/18/509/1",

-  notes =        "first time sic by ibs",

   doi =          "10.1063/1.1653516",
   doi =          "10.1063/1.1653516",

+  notes =        "first time sic by ibs, follow cites for precipitation
+                 ideas",

 }
 
 @Article{reeson87,
 }
 
 @Article{reeson87,


@@ -1365,7 +1527,7 @@
   notes =        "charge transport in strained si",
 }
 
   notes =        "charge transport in strained si",
 }
 

-@Article{PhysRevB.69.155214,
+@Article{kapur04,

   title =        "Carbon-mediated aggregation of self-interstitials in
                  silicon: {A} large-scale molecular dynamics study",
   author =       "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
   title =        "Carbon-mediated aggregation of self-interstitials in
                  silicon: {A} large-scale molecular dynamics study",
   author =       "Sumeet S. Kapur and Manish Prasad and Talid Sinno",


@@ -1457,6 +1619,39 @@
   publisher =    "American Physical Society",
 }
 
   publisher =    "American Physical Society",
 }
 

+@Article{brenner90,
+  title =        "Empirical potential for hydrocarbons for use in
+                 simulating the chemical vapor deposition of diamond
+                 films",
+  author =       "Donald W. Brenner",
+  journal =      "Phys. Rev. B",
+  volume =       "42",
+  number =       "15",
+  pages =        "9458--9471",
+  numpages =     "13",
+  year =         "1990",
+  month =        nov,
+  doi =          "10.1103/PhysRevB.42.9458",
+  publisher =    "American Physical Society",
+  notes =        "brenner hydro carbons",
+}
+
+@Article{bazant96,
+  title =        "Modeling of Covalent Bonding in Solids by Inversion of
+                 Cohesive Energy Curves",
+  author =       "Martin Z. Bazant and Efthimios Kaxiras",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "77",
+  number =       "21",
+  pages =        "4370--4373",
+  numpages =     "3",
+  year =         "1996",
+  month =        nov,
+  doi =          "10.1103/PhysRevLett.77.4370",
+  publisher =    "American Physical Society",
+  notes =        "first si edip",
+}
+

 @Article{bazant97,
   title =        "Environment-dependent interatomic potential for bulk
                  silicon",
 @Article{bazant97,
   title =        "Environment-dependent interatomic potential for bulk
                  silicon",


@@ -1471,6 +1666,7 @@
   month =        oct,
   doi =          "10.1103/PhysRevB.56.8542",
   publisher =    "American Physical Society",
   month =        oct,
   doi =          "10.1103/PhysRevB.56.8542",
   publisher =    "American Physical Society",

+  notes =        "second si edip",

 }
 
 @Article{justo98,
 }
 
 @Article{justo98,


@@ -1487,6 +1683,7 @@
   month =        aug,
   doi =          "10.1103/PhysRevB.58.2539",
   publisher =    "American Physical Society",
   month =        aug,
   doi =          "10.1103/PhysRevB.58.2539",
   publisher =    "American Physical Society",

+  notes =        "latest si edip, good dislocation explanation",

 }
 
 @Article{parcas_md,
 }
 
 @Article{parcas_md,


@@ -1641,5 +1838,277 @@
                  Conchon and M. Soueidan and G. Ferro and A. Mantzari
                  and A. Andreadou and E. K. Polychroniadis and C.
                  Balloud and S. Juillaguet and J. Camassel and M. Pons",
                  Conchon and M. Soueidan and G. Ferro and A. Mantzari
                  and A. Andreadou and E. K. Polychroniadis and C.
                  Balloud and S. Juillaguet and J. Camassel and M. Pons",

-  notes =        "3c-sic crystal growth, sic fabrication + links, metastable",
+  notes =        "3c-sic crystal growth, sic fabrication + links,
+                 metastable",
+}
+
+@Article{feynman39,
+  title =        "Forces in Molecules",
+  author =       "R. P. Feynman",
+  journal =      "Phys. Rev.",
+  volume =       "56",
+  number =       "4",
+  pages =        "340--343",
+  numpages =     "3",
+  year =         "1939",
+  month =        aug,
+  doi =          "10.1103/PhysRev.56.340",
+  publisher =    "American Physical Society",
+  notes =        "hellmann feynman forces",
+}
+
+@Article{buczko00,
+  title =        "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+                 $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+                 their Contrasting Properties",
+  author =       "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+                 T. Pantelides",
+  journal =      "Phys. Rev. Lett.",
+  volume =       "84",
+  number =       "5",
+  pages =        "943--946",
+  numpages =     "3",
+  year =         "2000",
+  month =        jan,
+  doi =          "10.1103/PhysRevLett.84.943",
+  publisher =    "American Physical Society",
+  notes =        "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+  title =        "Atomistic simulation of the interface structure of Si
+                 nanocrystals embedded in amorphous silica",
+  author =       "Flyura Djurabekova and Kai Nordlund",
+  journal =      "Phys. Rev. B",
+  volume =       "77",
+  number =       "11",
+  pages =        "115325",
+  numpages =     "7",
+  year =         "2008",
+  month =        mar,
+  doi =          "10.1103/PhysRevB.77.115325",
+  publisher =    "American Physical Society",
+  notes =        "nc-si in sio2, interface energy, nc construction,
+                 angular distribution, coordination",
+}
+
+@Article{wen09,
+  author =       "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+                 W. Liang and J. Zou",
+  collaboration = "",
+  title =        "Nature of interfacial defects and their roles in
+                 strain relaxation at highly lattice mismatched
+                 3{C}-Si{C}/Si (001) interface",
+  publisher =    "AIP",
+  year =         "2009",
+  journal =      "Journal of Applied Physics",
+  volume =       "106",
+  number =       "7",
+  eid =          "073522",
+  numpages =     "8",
+  pages =        "073522",
+  keywords =     "anelastic relaxation; crystal structure; dislocations;
+                 elemental semiconductors; semiconductor growth;
+                 semiconductor thin films; silicon; silicon compounds;
+                 stacking faults; wide band gap semiconductors",
+  URL =          "http://link.aip.org/link/?JAP/106/073522/1",
+  doi =          "10.1063/1.3234380",
+  notes =        "sic/si interface, follow refs, tem image
+                 deconvolution, dislocation defects",
+}
+
+@Article{kitabatake93,
+  author =       "Makoto Kitabatake and Masahiro Deguchi and Takashi
+                 Hirao",
+  collaboration = "",
+  title =        "Simulations and experiments of Si{C} heteroepitaxial
+                 growth on Si(001) surface",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Journal of Applied Physics",
+  volume =       "74",
+  number =       "7",
+  pages =        "4438--4445",
+  keywords =     "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+                 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+                 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+  URL =          "http://link.aip.org/link/?JAP/74/4438/1",
+  doi =          "10.1063/1.354385",
+  notes =        "mbe and md of sic growth on si, 4 to 5 shrinkage
+                 model, interface",
+}
+
+@Article{pizzagalli03,
+  title =        "Theoretical investigations of a highly mismatched
+                 interface: Si{C}/Si(001)",
+  author =       "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+                 Catellani",
+  journal =      "Phys. Rev. B",
+  volume =       "68",
+  number =       "19",
+  pages =        "195302",
+  numpages =     "10",
+  year =         "2003",
+  month =        nov,
+  doi =          "10.1103/PhysRevB.68.195302",
+  publisher =    "American Physical Society",
+  notes =        "tersoff md and ab initio sic/si interface study",
+}
+
+@Article{tang07,
+  title =        "Atomic configurations of dislocation core and twin
+                 boundaries in $ 3{C}-Si{C} $ studied by high-resolution
+                 electron microscopy",
+  author =       "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
+                 H. Zheng and J. W. Liang",
+  journal =      "Phys. Rev. B",
+  volume =       "75",
+  number =       "18",
+  pages =        "184103",
+  numpages =     "7",
+  year =         "2007",
+  month =        may,
+  doi =          "10.1103/PhysRevB.75.184103",
+  publisher =    "American Physical Society",
+  notes =        "hrem image deconvolution on 3c-sic on si, distinguish
+                 si and c",
+}
+
+@Article{hornstra58,
+  title =        "Dislocations in the diamond lattice",
+  journal =      "Journal of Physics and Chemistry of Solids",
+  volume =       "5",
+  number =       "1-2",
+  pages =        "129--141",
+  year =         "1958",
+  note =         "",
+  ISSN =         "0022-3697",
+  doi =          "DOI: 10.1016/0022-3697(58)90138-0",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
+  author =       "J. Hornstra",
+  notes =        "dislocations in diamond lattice",
+}
+
+@Article{eichhorn99,
+  author =       "F. Eichhorn and N. Schell and W. Matz and R.
+                 K{\"{o}}gler",
+  collaboration = "",
+  title =        "Strain and Si{C} particle formation in silicon
+                 implanted with carbon ions of medium fluence studied by
+                 synchrotron x-ray diffraction",
+  publisher =    "AIP",
+  year =         "1999",
+  journal =      "Journal of Applied Physics",
+  volume =       "86",
+  number =       "8",
+  pages =        "4184--4187",
+  keywords =     "silicon; carbon; elemental semiconductors; chemical
+                 interdiffusion; ion implantation; X-ray diffraction;
+                 precipitation; semiconductor doping",
+  URL =          "http://link.aip.org/link/?JAP/86/4184/1",
+  doi =          "10.1063/1.371344",
+  notes =        "sic conversion by ibs, detected substitutional
+                 carbon",
+}
+
+@Article{eichhorn02,
+  author =       "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+                 Metzger and W. Matz and R. K{\"{o}}gler",
+  collaboration = "",
+  title =        "Structural relation between Si and Si{C} formed by
+                 carbon ion implantation",
+  publisher =    "AIP",
+  year =         "2002",
+  journal =      "Journal of Applied Physics",
+  volume =       "91",
+  number =       "3",
+  pages =        "1287--1292",
+  keywords =     "silicon compounds; wide band gap semiconductors; ion
+                 implantation; annealing; X-ray scattering; transmission
+                 electron microscopy",
+  URL =          "http://link.aip.org/link/?JAP/91/1287/1",
+  doi =          "10.1063/1.1428105",
+  notes =        "3c-sic alignement to si host in ibs depending on
+                 temperature, might explain c int to c sub trafo",
+}
+
+@Article{lucas10,
+  author =       "G Lucas and M Bertolus and L Pizzagalli",
+  title =        "An environment-dependent interatomic potential for
+                 silicon carbide: calculation of bulk properties,
+                 high-pressure phases, point and extended defects, and
+                 amorphous structures",
+  journal =      "Journal of Physics: Condensed Matter",
+  volume =       "22",
+  number =       "3",
+  pages =        "035802",
+  URL =          "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+  year =         "2010",
+  notes =        "edip sic",
+}
+
+@Article{godet03,
+  author =       "J Godet and L Pizzagalli and S Brochard and P
+                 Beauchamp",
+  title =        "Comparison between classical potentials and ab initio
+                 methods for silicon under large shear",
+  journal =      "Journal of Physics: Condensed Matter",
+  volume =       "15",
+  number =       "41",
+  pages =        "6943",
+  URL =          "http://stacks.iop.org/0953-8984/15/i=41/a=004",
+  year =         "2003",
+  notes =        "comparison of empirical potentials, stillinger weber,
+                 edip, tersoff, ab initio",
+}
+
+@Article{moriguchi98,
+  title =        "Verification of Tersoff's Potential for Static
+                 Structural Analysis of Solids of Group-{IV} Elements",
+  author =       "Koji Moriguchi and Akira Shintani",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "37",
+  number =       "Part 1, No. 2",
+  pages =        "414--422",
+  numpages =     "8",
+  year =         "1998",
+  URL =          "http://jjap.ipap.jp/link?JJAP/37/414/",
+  doi =          "10.1143/JJAP.37.414",
+  publisher =    "The Japan Society of Applied Physics",
+  notes =        "tersoff stringent test",
+}
+
+@Article{holmstroem08,
+  title =        "Threshold defect production in silicon determined by
+                 density functional theory molecular dynamics
+                 simulations",
+  author =       "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
+  journal =      "Phys. Rev. B",
+  volume =       "78",
+  number =       "4",
+  pages =        "045202",
+  numpages =     "6",
+  year =         "2008",
+  month =        jul,
+  doi =          "10.1103/PhysRevB.78.045202",
+  publisher =    "American Physical Society",
+  notes =        "threshold displacement comparison empirical and ab
+                 initio",
+}
+
+@Article{nordlund97,
+  title =        "Repulsive interatomic potentials calculated using
+                 Hartree-Fock and density-functional theory methods",
+  journal =      "Nuclear Instruments and Methods in Physics Research
+                 Section B: Beam Interactions with Materials and Atoms",
+  volume =       "132",
+  number =       "1",
+  pages =        "45--54",
+  year =         "1997",
+  note =         "",
+  ISSN =         "0168-583X",
+  doi =          "DOI: 10.1016/S0168-583X(97)00447-3",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
+  author =       "K. Nordlund and N. Runeberg and D. Sundholm",
+  notes =        "repulsive ab initio potential",

 }
 }