+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "The Journal of Chemical Physics",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",