+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{lindner06,
+ title = "On the balance between ion beam induced nanoparticle
+ formation and displacive precipitate resolution in the
+ {C}-Si system",
+ journal = "Mater. Sci. Eng., C",
+ volume = "26",
+ number = "5-7",
+ pages = "857--861",
+ year = "2006",
+ note = "Current Trends in Nanoscience - from Materials to
+ Applications",
+ ISSN = "0928-4931",
+ doi = "DOI: 10.1016/j.msec.2005.09.099",
+ URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
+ notes = "c int diffusion barrier",
+}
+
+@Article{ito04,
+ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+ application in buffer layer for Ga{N} epitaxial
+ growth",
+ journal = "Applied Surface Science",
+ volume = "238",
+ number = "1-4",
+ pages = "159--164",
+ year = "2004",
+ note = "APHYS'03 Special Issue",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2004.05.199",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+ author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+ and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic, focus on ibs of 3c-sic",
+}
+
+@Article{yamamoto04,
+ title = "Organometallic vapor phase epitaxial growth of Ga{N}
+ on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
+ implantation into Si(1 1 1) substrate",
+ journal = "Journal of Crystal Growth",
+ volume = "261",
+ number = "2-3",
+ pages = "266--270",
+ year = "2004",
+ note = "Proceedings of the 11th Biennial (US) Workshop on
+ Organometallic Vapor Phase Epitaxy (OMVPE)",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
+ author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
+ Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
+ notes = "gan on 3c-sic",
+}
+
+@Article{liu_l02,
+ title = "Substrates for gallium nitride epitaxy",
+ journal = "Materials Science and Engineering: R: Reports",
+ volume = "37",
+ number = "3",
+ pages = "61--127",
+ year = "2002",
+ note = "",
+ ISSN = "0927-796X",
+ doi = "DOI: 10.1016/S0927-796X(02)00008-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
+ author = "L. Liu and J. H. Edgar",
+ notes = "gan substrates",
+}
+
+@Article{takeuchi91,
+ title = "Growth of single crystalline Ga{N} film on Si
+ substrate using 3{C}-Si{C} as an intermediate layer",
+ journal = "Journal of Crystal Growth",
+ volume = "115",
+ number = "1-4",
+ pages = "634--638",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90817-O",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
+ author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
+ Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
+ notes = "gan on 3c-sic (first time?)",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "J. Chem. Phys.",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "J. Chem. Phys.",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff90,
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{davis91,
+ author = "R. F. Davis and G. Kelner and M. Shur and J. W.
+ Palmour and J. A. Edmond",
+ journal = "Proceedings of the IEEE",
+ title = "Thin film deposition and microelectronic and
+ optoelectronic device fabrication and characterization
+ in monocrystalline alpha and beta silicon carbide",
+ year = "1991",
+ month = may,
+ volume = "79",
+ number = "5",
+ pages = "677--701",
+ keywords = "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
+ diode;SiC;dry etching;electrical
+ contacts;etching;impurity incorporation;optoelectronic
+ device fabrication;solid-state devices;surface
+ chemistry;Schottky effect;Schottky gate field effect
+ transistors;Schottky-barrier
+ diodes;etching;heterojunction bipolar
+ transistors;insulated gate field effect
+ transistors;light emitting diodes;semiconductor
+ materials;semiconductor thin films;silicon compounds;",
+ doi = "10.1109/5.90132",
+ ISSN = "0018-9219",
+ notes = "sic growth methods",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "J. Appl. Phys.",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",
+ notes = "sic intro, properties",
+}
+
+@Article{foo,
+ author = "Noch Unbekannt",
+ title = "How to find references",
+ journal = "Journal of Applied References",
+ year = "2009",
+ volume = "77",
+ pages = "1--23",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ doi = "10.1103/PhysRevB.52.15150",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
+ publisher = "American Physical Society",
+}
+
+@Article{sarro00,
+ title = "Silicon carbide as a new {MEMS} technology",
+ journal = "Sensors and Actuators A: Physical",
+ volume = "82",
+ number = "1-3",
+ pages = "210--218",
+ year = "2000",
+ ISSN = "0924-4247",
+ doi = "DOI: 10.1016/S0924-4247(99)00335-0",
+ URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
+ author = "Pasqualina M. Sarro",
+ keywords = "MEMS",
+ keywords = "Silicon carbide",
+ keywords = "Micromachining",
+ keywords = "Mechanical stress",
+}
+
+@Article{casady96,
+ title = "Status of silicon carbide (Si{C}) as a wide-bandgap
+ semiconductor for high-temperature applications: {A}
+ review",
+ journal = "Solid-State Electronics",
+ volume = "39",
+ number = "10",
+ pages = "1409--1422",
+ year = "1996",
+ ISSN = "0038-1101",
+ doi = "DOI: 10.1016/0038-1101(96)00045-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
+ author = "J. B. Casady and R. W. Johnson",
+ notes = "sic intro",
+}
+
+@Article{giancarli98,
+ title = "Design requirements for Si{C}/Si{C} composites
+ structural material in fusion power reactor blankets",
+ journal = "Fusion Engineering and Design",
+ volume = "41",
+ number = "1-4",
+ pages = "165--171",
+ year = "1998",
+ ISSN = "0920-3796",
+ doi = "DOI: 10.1016/S0920-3796(97)00200-7",
+ URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
+ author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
+ Marois and N. B. Morley and J. F. Salavy",
+}
+
+@Article{pensl93,
+ title = "Electrical and optical characterization of Si{C}",
+ journal = "Physica B: Condensed Matter",
+ volume = "185",
+ number = "1-4",
+ pages = "264--283",
+ year = "1993",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(93)90249-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
+ author = "G. Pensl and W. J. Choyke",
+}
+
+@Article{tairov78,
+ title = "Investigation of growth processes of ingots of silicon
+ carbide single crystals",
+ journal = "J. Cryst. Growth",
+ volume = "43",
+ number = "2",
+ pages = "209--212",
+ year = "1978",
+ notes = "modified lely process",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(78)90169-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
+ author = "Yu. M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{tairov81,
+ title = "General principles of growing large-size single
+ crystals of various silicon carbide polytypes",
+ journal = "Journal of Crystal Growth",
+ volume = "52",
+ number = "Part 1",
+ pages = "146--150",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90184-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
+ author = "Yu.M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{barrett91,
+ title = "Si{C} boule growth by sublimation vapor transport",
+ journal = "Journal of Crystal Growth",
+ volume = "109",
+ number = "1-4",
+ pages = "17--23",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90152-U",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+ author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+ R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+ title = "Growth of large Si{C} single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "128",
+ number = "1-4",
+ pages = "358--362",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90348-Z",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+ author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+ R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+ W. J. Choyke",
+}
+
+@Article{stein93,
+ title = "Control of polytype formation by surface energy
+ effects during the growth of Si{C} monocrystals by the
+ sublimation method",
+ journal = "Journal of Crystal Growth",
+ volume = "131",
+ number = "1-2",
+ pages = "71--74",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90397-F",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+ author = "R. A. Stein and P. Lanig",
+ notes = "6h and 4h, sublimation technique",
+}
+
+@Article{nishino83,
+ author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+ Will",
+ collaboration = "",
+ title = "Production of large-area single-crystal wafers of
+ cubic Si{C} for semiconductor devices",
+ publisher = "AIP",
+ year = "1983",
+ journal = "Appl. Phys. Lett.",
+ volume = "42",
+ number = "5",
+ pages = "460--462",
+ keywords = "silicon carbides; layers; chemical vapor deposition;
+ monocrystals",
+ URL = "http://link.aip.org/link/?APL/42/460/1",
+ doi = "10.1063/1.93970",
+ notes = "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino87,
+ author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+ and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Epitaxial growth and electric characteristics of cubic
+ Si{C} on silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "J. Appl. Phys.",
+ volume = "61",
+ number = "10",
+ pages = "4889--4893",
+ URL = "http://link.aip.org/link/?JAP/61/4889/1",
+ doi = "10.1063/1.338355",
+ notes = "cvd of 3c-sic on si, sic buffer layer, first time
+ carbonization",
+}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{powell87_2,
+ author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
+ C. M. Chorey and T. T. Cheng and P. Pirouz",
+ collaboration = "",
+ title = "Improved beta-Si{C} heteroepitaxial films using
+ off-axis Si substrates",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "11",
+ pages = "823--825",
+ keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
+ COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
+ STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
+ FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
+ OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
+ URL = "http://link.aip.org/link/?APL/51/823/1",
+ doi = "10.1063/1.98824",
+ notes = "improved sic on off-axis si substrates, reduced apbs",
+}
+
+@Article{ueda90,
+ title = "Crystal growth of Si{C} by step-controlled epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "104",
+ number = "3",
+ pages = "695--700",
+ year = "1990",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(90)90013-B",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+ author = "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+ Matsunami",
+ notes = "step-controlled epitaxy model",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
+}
+
+@Article{powell90_2,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of high quality 6{H}-Si{C} epitaxial films on
+ vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "15",
+ pages = "1442--1444",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+ TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+ DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1442/1",
+ doi = "10.1063/1.102492",
+ notes = "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+ author = "H. S. Kong and J. T. Glass and R. F. Davis",
+ collaboration = "",
+ title = "Chemical vapor deposition and characterization of
+ 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "64",
+ number = "5",
+ pages = "2672--2679",
+ keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+ COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+ MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+ STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+ PHASE EPITAXY; CRYSTAL ORIENTATION",
+ URL = "http://link.aip.org/link/?JAP/64/2672/1",
+ doi = "10.1063/1.341608",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Appl. Phys. Lett.",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{kong88,
+ author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+ Rozgonyi and K. L. More",
+ collaboration = "",
+ title = "An examination of double positioning boundaries and
+ interface misfit in beta-Si{C} films on alpha-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "63",
+ number = "8",
+ pages = "2645--2650",
+ keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+ FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+ FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+ MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+ STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+ URL = "http://link.aip.org/link/?JAP/63/2645/1",
+ doi = "10.1063/1.341004",
+}
+
+@Article{powell91,
+ author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+ Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+ and W. J. Choyke and L. Clemen and M. Yoganathan",
+ collaboration = "",
+ title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Applied Physics Letters",
+ volume = "59",
+ number = "3",
+ pages = "333--335",
+ keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+ PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+ MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+ URL = "http://link.aip.org/link/?APL/59/333/1",
+ doi = "10.1063/1.105587",
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
+}
+
+@Article{kaneda87,
+ title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+ properties of its p-n junction",
+ journal = "Journal of Crystal Growth",
+ volume = "81",
+ number = "1-4",
+ pages = "536--542",
+ year = "1987",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(87)90449-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+ author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+ and Takao Tanaka",
+ notes = "first time ssmbe of 3c-sic on 6h-sic",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "J. Cryst. Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B.
+ Schr{\"{o}}ter and W. Richter",
+ notes = "solid source mbe of 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel95_apl,
+ author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+ collaboration = "",
+ title = "Low-temperature growth of Si{C} thin films on Si and
+ 6{H}--Si{C} by solid-source molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Appl. Phys. Lett.",
+ volume = "66",
+ number = "23",
+ pages = "3182--3184",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ RHEED; NUCLEATION",
+ URL = "http://link.aip.org/link/?APL/66/3182/1",
+ doi = "10.1063/1.113716",
+ notes = "mbe 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel96,
+ author = "Andreas Fissel and Ute Kaiser and Kay Pfennighaus and
+ Bernd Schr{\"{o}}ter and Wolfgang Richter",
+ collaboration = "",
+ title = "Growth of 6{H}--Si{C} on 6{H}--Si{C}(0001) by
+ migration enhanced epitaxy controlled to an atomic
+ level using surface superstructures",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "9",
+ pages = "1204--1206",
+ keywords = "MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ NUCLEATION; SILICON CARBIDES; SURFACE RECONSTRUCTION;
+ SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?APL/68/1204/1",
+ doi = "10.1063/1.115969",
+ notes = "ss mbe sic, superstructure, reconstruction",
+}
+
+@Article{righi03,
+ title = "Ab initio Simulations of Homoepitaxial Si{C} Growth",
+ author = "M. C. Righi and C. A. Pignedoli and R. Di Felice and
+ C. M. Bertoni and A. Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "91",
+ number = "13",
+ pages = "136101",
+ numpages = "4",
+ year = "2003",
+ month = sep,
+ doi = "10.1103/PhysRevLett.91.136101",
+ publisher = "American Physical Society",
+ notes = "dft calculations mbe sic growth",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Appl. Phys. Lett.",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ doi = "10.1063/1.1653516",
+ notes = "first time sic by ibs, follow cites for precipitation
+ ideas",
+}
+
+@Article{edelman76,
+ author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+ and E. V. Lubopytova",
+ title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+ by ion implantation",
+ publisher = "Taylor \& Francis",
+ year = "1976",
+ journal = "Radiation Effects",
+ volume = "29",
+ number = "1",
+ pages = "13--15",
+ URL = "http://www.informaworld.com/10.1080/00337577608233477",
+ notes = "3c-sic for different temperatures, amorphous, poly,
+ single crystalline",
+}
+
+@Article{akimchenko80,
+ author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
+ Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+ title = "Structure and optical properties of silicon implanted
+ by high doses of 70 and 310 ke{V} carbon ions",
+ publisher = "Taylor \& Francis",
+ year = "1980",
+ journal = "Radiation Effects",
+ volume = "48",
+ number = "1",
+ pages = "7",
+ URL = "http://www.informaworld.com/10.1080/00337578008209220",
+ notes = "3c-sic nucleation by thermal spikes",
+}
+
+@Article{kimura81,
+ title = "Structure and annealing properties of silicon carbide
+ thin layers formed by implantation of carbon ions in
+ silicon",
+ journal = "Thin Solid Films",
+ volume = "81",
+ number = "4",
+ pages = "319--327",
+ year = "1981",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(81)90516-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{kimura82,
+ title = "Characteristics of the synthesis of [beta]-Si{C} by
+ the implantation of carbon ions into silicon",
+ journal = "Thin Solid Films",
+ volume = "94",
+ number = "3",
+ pages = "191--198",
+ year = "1982",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(82)90295-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{reeson86,
+ author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
+ C. D. Meekison and C. Marsh and G. R. Booker and R. J.
+ Chater and J. A. Iulner and J. Davis",
+ title = "Formation mechanisms and structures of insulating
+ compounds formed in silicon by ion beam synthesis",
+ publisher = "Taylor \& Francis",
+ year = "1986",
+ journal = "Radiation Effects",
+ volume = "99",
+ number = "1",
+ pages = "71--81",
+ URL = "http://www.informaworld.com/10.1080/00337578608209614",
+ notes = "ibs, comparison with sio and sin, higher temp or
+ time",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Appl. Phys. Lett.",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+
+@Article{martin90,
+ author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+ and M. Olivier and A. M. Papon and G. Rolland",
+ collaboration = "",
+ title = "High-temperature ion beam synthesis of cubic Si{C}",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Journal of Applied Physics",
+ volume = "67",
+ number = "6",
+ pages = "2908--2912",
+ keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+ IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+ TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+ INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+ ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+ REACTIONS; MONOCRYSTALS",
+ URL = "http://link.aip.org/link/?JAP/67/2908/1",
+ doi = "10.1063/1.346092",
+ notes = "triple energy implantation to overcome high annealing
+ temepratures",
+}
+
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "J. Chem. Phys.",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si, si-c phase diagram",
+}
+
+@Article{hofker74,
+ author = "W. Hofker and H. Werner and D. Oosthoek and N.
+ Koeman",
+ affiliation = "N. V. Philips' Gloeilampenfabrieken Philips Research
+ Laboratories Eindhoven Netherlands Eindhoven
+ Netherlands",
+ title = "Boron implantations in silicon: {A} comparison of
+ charge carrier and boron concentration profiles",
+ journal = "Applied Physics A: Materials Science &
+ Processing",
+ publisher = "Springer Berlin / Heidelberg",
+ ISSN = "0947-8396",
+ keyword = "Physics and Astronomy",
+ pages = "125--133",
+ volume = "4",
+ issue = "2",
+ URL = "http://dx.doi.org/10.1007/BF00884267",
+ note = "10.1007/BF00884267",
+ year = "1974",
+ notes = "first time ted (only for boron?)",
+}
+
+@Article{michel87,
+ author = "A. E. Michel and W. Rausch and P. A. Ronsheim and R.
+ H. Kastl",
+ collaboration = "",
+ title = "Rapid annealing and the anomalous diffusion of ion
+ implanted boron into silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "50",
+ number = "7",
+ pages = "416--418",
+ keywords = "SILICON; ION IMPLANTATION; ANNEALING; DIFFUSION;
+ BORON; ATOM TRANSPORT; CHARGEDPARTICLE TRANSPORT; VERY
+ HIGH TEMPERATURE; PN JUNCTIONS; SURFACE CONDUCTIVITY",
+ URL = "http://link.aip.org/link/?APL/50/416/1",
+ doi = "10.1063/1.98160",
+ notes = "ted of boron in si",
+}
+
+@Article{cowern90,
+ author = "N. E. B. Cowern and K. T. F. Janssen and H. F. F.
+ Jos",
+ collaboration = "",
+ title = "Transient diffusion of ion-implanted {B} in Si: Dose,
+ time, and matrix dependence of atomic and electrical
+ profiles",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Journal of Applied Physics",
+ volume = "68",
+ number = "12",
+ pages = "6191--6198",
+ keywords = "BORON IONS; ION IMPLANTATION; SILICON; DIFFUSION; TIME
+ DEPENDENCE; ANNEALING; VERY HIGH TEMPERATURE; SIMS;
+ CRYSTALS; AMORPHIZATION",
+ URL = "http://link.aip.org/link/?JAP/68/6191/1",
+ doi = "10.1063/1.346910",
+ notes = "ted of boron in si",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Appl. Phys. Lett.",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
+
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Appl. Phys.",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap",
+}
+
+@Article{powell94,
+ author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+ collaboration = "",
+ title = "Formation of beta-Si{C} nanocrystals by the relaxation
+ of Si[sub 1 - y]{C}[sub y] random alloy layers",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Appl. Phys. Lett.",
+ volume = "64",
+ number = "3",
+ pages = "324--326",
+ keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+ EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+ TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+ SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/64/324/1",
+ doi = "10.1063/1.111195",
+ notes = "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+ author = "Richard A. Soref",
+ collaboration = "",
+ title = "Optical band gap of the ternary semiconductor Si[sub 1
+ - x - y]Ge[sub x]{C}[sub y]",
+ publisher = "AIP",
+ year = "1991",
+ journal = "J. Appl. Phys.",
+ volume = "70",
+ number = "4",
+ pages = "2470--2472",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+ OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+ TERNARY ALLOYS",
+ URL = "http://link.aip.org/link/?JAP/70/2470/1",
+ doi = "10.1063/1.349403",
+ notes = "band gap of strained si by c",
+}
+
+@Article{kasper91,
+ author = "E Kasper",
+ title = "Superlattices of group {IV} elements, a new
+ possibility to produce direct band gap material",
+ journal = "Physica Scripta",
+ volume = "T35",
+ pages = "232--236",
+ URL = "http://stacks.iop.org/1402-4896/T35/232",
+ year = "1991",
+ notes = "superlattices, convert indirect band gap into a
+ quasi-direct one",
+}
+
+@Article{osten99,
+ author = "H. J. Osten and J. Griesche and S. Scalese",
+ collaboration = "",
+ title = "Substitutional carbon incorporation in epitaxial
+ Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Appl. Phys. Lett.",
+ volume = "74",
+ number = "6",
+ pages = "836--838",
+ keywords = "molecular beam epitaxial growth; semiconductor growth;
+ wide band gap semiconductors; interstitials; silicon
+ compounds",
+ URL = "http://link.aip.org/link/?APL/74/836/1",
+ doi = "10.1063/1.123384",
+ notes = "substitutional c in si",
+}
+
+@Article{hohenberg64,
+ title = "Inhomogeneous Electron Gas",
+ author = "P. Hohenberg and W. Kohn",
+ journal = "Phys. Rev.",
+ volume = "136",
+ number = "3B",
+ pages = "B864--B871",
+ numpages = "7",
+ year = "1964",
+ month = nov,
+ doi = "10.1103/PhysRev.136.B864",
+ publisher = "American Physical Society",
+ notes = "density functional theory, dft",
+}
+
+@Article{kohn65,
+ title = "Self-Consistent Equations Including Exchange and
+ Correlation Effects",
+ author = "W. Kohn and L. J. Sham",
+ journal = "Phys. Rev.",
+ volume = "140",
+ number = "4A",
+ pages = "A1133--A1138",
+ numpages = "5",
+ year = "1965",
+ month = nov,
+ doi = "10.1103/PhysRev.140.A1133",
+ publisher = "American Physical Society",
+ notes = "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+ title = "Strain-stabilized highly concentrated pseudomorphic
+ $Si1-x$$Cx$ layers in Si",
+ author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+ J. Osten",
+ journal = "Phys. Rev. Lett.",
+ volume = "72",
+ number = "22",
+ pages = "3578--3581",
+ numpages = "3",
+ year = "1994",
+ month = may,
+ doi = "10.1103/PhysRevLett.72.3578",
+ publisher = "American Physical Society",
+ notes = "high c concentration in si, heterostructure, strained
+ si, dft",
+}
+
+@Article{chang05,
+ title = "Electron Transport Model for Strained Silicon-Carbon
+ Alloy",
+ author = "Shu-Tong Chang and Chung-Yi Lin",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "44",
+ number = "4B",
+ pages = "2257--2262",
+ numpages = "5",
+ year = "2005",
+ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
+ doi = "10.1143/JJAP.44.2257",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+ author = "H. J. Osten and P. Gaworzewski",
+ collaboration = "",
+ title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+ and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+ Si(001)",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Appl. Phys.",
+ volume = "82",
+ number = "10",
+ pages = "4977--4981",
+ keywords = "silicon compounds; Ge-Si alloys; wide band gap
+ semiconductors; semiconductor epitaxial layers; carrier
+ density; Hall mobility; interstitials; defect states",
+ URL = "http://link.aip.org/link/?JAP/82/4977/1",
+ doi = "10.1063/1.366364",
+ notes = "charge transport in strained si",
+}
+
+@Article{kapur04,
+ title = "Carbon-mediated aggregation of self-interstitials in
+ silicon: {A} large-scale molecular dynamics study",
+ author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "15",
+ pages = "155214",
+ numpages = "8",
+ year = "2004",
+ month = apr,
+ doi = "10.1103/PhysRevB.69.155214",
+ publisher = "American Physical Society",
+ notes = "simulation using promising tersoff reparametrization",
+}
+
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "J. Chem. Phys.",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}
+
+@Article{parrinello81,
+ author = "M. Parrinello and A. Rahman",
+ collaboration = "",
+ title = "Polymorphic transitions in single crystals: {A} new
+ molecular dynamics method",
+ publisher = "AIP",
+ year = "1981",
+ journal = "J. Appl. Phys.",
+ volume = "52",
+ number = "12",
+ pages = "7182--7190",
+ keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
+ MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
+ CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
+ COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
+ EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
+ IMPACT SHOCK",
+ URL = "http://link.aip.org/link/?JAP/52/7182/1",
+ doi = "10.1063/1.328693",
+}
+
+@Article{stillinger85,
+ title = "Computer simulation of local order in condensed phases
+ of silicon",
+ author = "Frank H. Stillinger and Thomas A. Weber",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "8",
+ pages = "5262--5271",
+ numpages = "9",
+ year = "1985",
+ month = apr,
+ doi = "10.1103/PhysRevB.31.5262",
+ publisher = "American Physical Society",
+}
+
+@Article{brenner90,
+ title = "Empirical potential for hydrocarbons for use in
+ simulating the chemical vapor deposition of diamond
+ films",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "15",
+ pages = "9458--9471",
+ numpages = "13",
+ year = "1990",
+ month = nov,
+ doi = "10.1103/PhysRevB.42.9458",
+ publisher = "American Physical Society",
+ notes = "brenner hydro carbons",
+}
+
+@Article{bazant96,
+ title = "Modeling of Covalent Bonding in Solids by Inversion of
+ Cohesive Energy Curves",
+ author = "Martin Z. Bazant and Efthimios Kaxiras",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4370--4373",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4370",
+ publisher = "American Physical Society",
+ notes = "first si edip",
+}
+
+@Article{bazant97,
+ title = "Environment-dependent interatomic potential for bulk
+ silicon",
+ author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
+ Justo",
+ journal = "Phys. Rev. B",
+ volume = "56",
+ number = "14",
+ pages = "8542--8552",
+ numpages = "10",
+ year = "1997",
+ month = oct,
+ doi = "10.1103/PhysRevB.56.8542",
+ publisher = "American Physical Society",
+ notes = "second si edip",
+}
+
+@Article{justo98,
+ title = "Interatomic potential for silicon defects and
+ disordered phases",
+ author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
+ Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "5",
+ pages = "2539--2550",
+ numpages = "11",
+ year = "1998",
+ month = aug,
+ doi = "10.1103/PhysRevB.58.2539",
+ publisher = "American Physical Society",
+ notes = "latest si edip, good dislocation explanation",
+}
+
+@Article{parcas_md,
+ title = "{PARCAS} molecular dynamics code",
+ author = "K. Nordlund",
+ year = "2008",
+}
+
+@Article{voter97,
+ title = "Hyperdynamics: Accelerated Molecular Dynamics of
+ Infrequent Events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. Lett.",
+ volume = "78",
+ number = "20",
+ pages = "3908--3911",
+ numpages = "3",
+ year = "1997",
+ month = may,
+ doi = "10.1103/PhysRevLett.78.3908",
+ publisher = "American Physical Society",
+ notes = "hyperdynamics, accelerated md",
+}
+
+@Article{voter97_2,
+ author = "Arthur F. Voter",
+ collaboration = "",
+ title = "A method for accelerating the molecular dynamics
+ simulation of infrequent events",
+ publisher = "AIP",
+ year = "1997",
+ journal = "J. Chem. Phys.",
+ volume = "106",
+ number = "11",
+ pages = "4665--4677",
+ keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
+ TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
+ SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
+ energy functions; surface diffusion; reaction kinetics
+ theory; potential energy surfaces",
+ URL = "http://link.aip.org/link/?JCP/106/4665/1",
+ doi = "10.1063/1.473503",
+ notes = "improved hyperdynamics md",
+}
+
+@Article{sorensen2000,
+ author = "Mads R. S{\o }rensen and Arthur F. Voter",
+ collaboration = "",
+ title = "Temperature-accelerated dynamics for simulation of
+ infrequent events",
+ publisher = "AIP",
+ year = "2000",
+ journal = "J. Chem. Phys.",
+ volume = "112",
+ number = "21",
+ pages = "9599--9606",
+ keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
+ MOLECULAR DYNAMICS METHOD; surface diffusion",
+ URL = "http://link.aip.org/link/?JCP/112/9599/1",
+ doi = "10.1063/1.481576",
+ notes = "temperature accelerated dynamics, tad",
+}
+
+@Article{voter98,
+ title = "Parallel replica method for dynamics of infrequent
+ events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "22",
+ pages = "R13985--R13988",
+ numpages = "3",
+ year = "1998",
+ month = jun,
+ doi = "10.1103/PhysRevB.57.R13985",
+ publisher = "American Physical Society",
+ notes = "parallel replica method, accelerated md",
+}
+
+@Article{wu99,
+ author = "Xiongwu Wu and Shaomeng Wang",
+ collaboration = "",
+ title = "Enhancing systematic motion in molecular dynamics
+ simulation",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Chem. Phys.",
+ volume = "110",
+ number = "19",
+ pages = "9401--9410",
+ keywords = "molecular dynamics method; argon; Lennard-Jones
+ potential; crystallisation; liquid theory",
+ URL = "http://link.aip.org/link/?JCP/110/9401/1",
+ doi = "10.1063/1.478948",
+ notes = "self guided md, sgmd, accelerated md, enhancing
+ systematic motion",
+}
+
+@Article{choudhary05,
+ author = "Devashish Choudhary and Paulette Clancy",
+ collaboration = "",
+ title = "Application of accelerated molecular dynamics schemes
+ to the production of amorphous silicon",
+ publisher = "AIP",
+ year = "2005",
+ journal = "J. Chem. Phys.",
+ volume = "122",
+ number = "15",
+ eid = "154509",
+ numpages = "8",
+ pages = "154509",
+ keywords = "molecular dynamics method; silicon; glass structure;
+ amorphous semiconductors",
+ URL = "http://link.aip.org/link/?JCP/122/154509/1",
+ doi = "10.1063/1.1878733",
+ notes = "explanation of sgmd and hyper md, applied to amorphous
+ silicon",
+}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Appl. Phys. Lett.",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si, si self
+ interstitials necessary for precipitation, volume
+ decrease, high interface energy",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "J. Cryst. Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}
+
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "Journal of Physics D: Applied Physics",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
+@Article{feynman39,
+ title = "Forces in Molecules",
+ author = "R. P. Feynman",
+ journal = "Phys. Rev.",
+ volume = "56",
+ number = "4",
+ pages = "340--343",
+ numpages = "3",
+ year = "1939",
+ month = aug,
+ doi = "10.1103/PhysRev.56.340",
+ publisher = "American Physical Society",
+ notes = "hellmann feynman forces",
+}
+
+@Article{buczko00,
+ title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+ $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+ their Contrasting Properties",
+ author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+ T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "84",
+ number = "5",
+ pages = "943--946",
+ numpages = "3",
+ year = "2000",
+ month = jan,
+ doi = "10.1103/PhysRevLett.84.943",
+ publisher = "American Physical Society",
+ notes = "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+ title = "Atomistic simulation of the interface structure of Si
+ nanocrystals embedded in amorphous silica",
+ author = "Flyura Djurabekova and Kai Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "11",
+ pages = "115325",
+ numpages = "7",
+ year = "2008",
+ month = mar,
+ doi = "10.1103/PhysRevB.77.115325",
+ publisher = "American Physical Society",
+ notes = "nc-si in sio2, interface energy, nc construction,
+ angular distribution, coordination",
+}
+
+@Article{wen09,
+ author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+ W. Liang and J. Zou",
+ collaboration = "",
+ title = "Nature of interfacial defects and their roles in
+ strain relaxation at highly lattice mismatched
+ 3{C}-Si{C}/Si (001) interface",
+ publisher = "AIP",
+ year = "2009",
+ journal = "J. Appl. Phys.",
+ volume = "106",
+ number = "7",
+ eid = "073522",
+ numpages = "8",
+ pages = "073522",
+ keywords = "anelastic relaxation; crystal structure; dislocations;
+ elemental semiconductors; semiconductor growth;
+ semiconductor thin films; silicon; silicon compounds;
+ stacking faults; wide band gap semiconductors",
+ URL = "http://link.aip.org/link/?JAP/106/073522/1",
+ doi = "10.1063/1.3234380",
+ notes = "sic/si interface, follow refs, tem image
+ deconvolution, dislocation defects",
+}
+
+@Article{kitabatake93,
+ author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
+ Hirao",
+ collaboration = "",
+ title = "Simulations and experiments of Si{C} heteroepitaxial
+ growth on Si(001) surface",
+ publisher = "AIP",
+ year = "1993",
+ journal = "J. Appl. Phys.",
+ volume = "74",
+ number = "7",
+ pages = "4438--4445",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+ BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+ MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+ URL = "http://link.aip.org/link/?JAP/74/4438/1",
+ doi = "10.1063/1.354385",
+ notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
+ model, interface",
+}
+
+@Article{kitabatake97,
+ author = "Makoto Kitabatake",
+ title = "Simulations and Experiments of 3{C}-Si{C}/Si
+ Heteroepitaxial Growth",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "physica status solidi (b)",
+ volume = "202",
+ pages = "405--420",
+ URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ notes = "3c-sic heteroepitaxial growth on si off-axis model",
+}
+
+@Article{chirita97,
+ title = "Strain relaxation and thermal stability of the
+ 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
+ dynamics study",
+ journal = "Thin Solid Films",
+ volume = "294",
+ number = "1-2",
+ pages = "47--49",
+ year = "1997",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/S0040-6090(96)09257-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
+ author = "V. Chirita and L. Hultman and L. R. Wallenberg",
+ keywords = "Strain relaxation",
+ keywords = "Interfaces",
+ keywords = "Thermal stability",
+ keywords = "Molecular dynamics",
+ notes = "tersoff sic/si interface study",
+}
+
+@Article{cicero02,
+ title = "Ab initio Study of Misfit Dislocations at the
+ $Si{C}/Si(001)$ Interface",
+ author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
+ Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "89",
+ number = "15",
+ pages = "156101",
+ numpages = "4",
+ year = "2002",
+ month = sep,
+ doi = "10.1103/PhysRevLett.89.156101",
+ publisher = "American Physical Society",
+ notes = "sic/si interface study",
+}
+
+@Article{pizzagalli03,
+ title = "Theoretical investigations of a highly mismatched
+ interface: Si{C}/Si(001)",
+ author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+ Catellani",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "19",
+ pages = "195302",
+ numpages = "10",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.195302",
+ publisher = "American Physical Society",
+ notes = "tersoff md and ab initio sic/si interface study",
+}
+
+@Article{tang07,
+ title = "Atomic configurations of dislocation core and twin
+ boundaries in $ 3{C}-Si{C} $ studied by high-resolution
+ electron microscopy",
+ author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
+ H. Zheng and J. W. Liang",
+ journal = "Phys. Rev. B",
+ volume = "75",
+ number = "18",
+ pages = "184103",
+ numpages = "7",
+ year = "2007",
+ month = may,
+ doi = "10.1103/PhysRevB.75.184103",
+ publisher = "American Physical Society",
+ notes = "hrem image deconvolution on 3c-sic on si, distinguish
+ si and c",
+}
+
+@Article{hornstra58,
+ title = "Dislocations in the diamond lattice",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "5",
+ number = "1-2",
+ pages = "129--141",
+ year = "1958",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(58)90138-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
+ author = "J. Hornstra",
+ notes = "dislocations in diamond lattice",
+}
+
+@Article{deguchi92,
+ title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+ Ion `Hot' Implantation",
+ author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
+ Hirao and Naoki Arai and Tomio Izumi",
+ journal = "Japanese J. Appl. Phys.",
+ volume = "31",
+ number = "Part 1, No. 2A",
+ pages = "343--347",
+ numpages = "4",
+ year = "1992",
+ URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
+ doi = "10.1143/JJAP.31.343",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "c-c bonds in c implanted si, hot implantation
+ efficiency, c-c hard to break by thermal annealing",
+}
+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "J. Appl. Phys.",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional carbon,
+ expansion of si lattice",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "J. Appl. Phys.",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c into c sub trafo",