+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=15cm]{if_cmp2_e.eps}
+\caption[Comparison of a simulation result and a cross-sectional TEM snapshot of $180 \, keV$ implanted carbon in silicon at $150 \,^{\circ} \mathrm{C}$ with $4.3 \times 10^{17} cm^{-2}$]{} \label{4}
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=8cm]{mit_ohne_diff_e.eps}
+\caption[Identical simulation cycles with diffusion switched off (left) and on (right)]{} \label{5}
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=8cm]{high_low_ac-diff_e.eps}
+\caption[Identical simulation cycles with different diffusion rates]{} \label{6}
+\end{center}
+\end{figure}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=10cm]{all_z-z_plus_1.eps}
+\caption[Amorphous/crystalline and carbon distribution view of two successive layers]{} \label{7}
+\end{center}
+\end{figure}
+