+% also: plot energy all confs with respect to C-C distance\r
+% maybe a pathway exists traversing low energy confs ?!?\r
+\r
+% point out that configurations along 110 were extended up to the 6th NN in that direction\r
+The binding energies of the energetically most favorable configurations with the seocnd DB located along the \hkl[1 1 0] direction and resulting C-C distances of the relaxed structures are summarized in Table~\ref{table:dc_110}.\r
+\begin{table}\r
+\begin{ruledtabular}\r
+\begin{tabular}{l c c c c c c }\r
+ & 1 & 2 & 3 & 4 & 5 & 6 \\\r
+\hline\r
+ $E_{\text{b}}$ [eV] & -2.39 & -1.88 & -0.59 & -0.31 & -0.24 & -0.21 \\\r
+C-C distance [nm] & 0.14 & 0.46 & 0.65 & 0.86 & 1.05 & 1.08 \r
+\end{tabular}\r
+\end{ruledtabular}\r
+\caption{Binding energies $E_{\text{b}}$ and C-C distance of energetically most favorable C$_{\text{i}}$ \hkl<1 0 0>-type defect pairs separated along bonds in \hkl[1 1 0] direction.}\r
+\label{table:dc_110}\r
+\end{table}\r
+The binding energy of these configurations with respect to the C-C distance is plotted in Fig.~\ref{fig:dc_110}\r
+\begin{figure}\r
+\includegraphics[width=\columnwidth]{db_along_110_cc_n.ps}\r
+\caption{Minimum binding energy of dumbbell combinations separated along \hkl[1 1 0] with respect to the C-C distance. The blue line is a guide for the eye and the green curve corresponds to the most suitable fit function consisting of all but the first data point.}\r
+\label{fig:dc_110}\r
+\end{figure}\r
+The interaction is found to be proportional to the reciprocal cube of the C-C distance for extended separations of the C$_{\text{i}}$ and saturates for the smallest possible separation, i.e. the ground state configuration.\r
+\r
+\begin{table}\r
+\begin{ruledtabular}\r
+\begin{tabular}{l c c c c c c }\r
+ & 1 & 2 & 3 & 4 & 5 & R \\\r
+\hline\r
+C$_{\text{s}}$ & 0.26$^a$/-1.28$^b$ & -0.51 & -0.93$^A$/-0.95$^B$ & -0.15 & 0.49 & -0.05\\\r
+V & -5.39 ($\rightarrow$ C$_{\text{S}}$) & -0.59 & -3.14 & -0.54 & -0.50 & -0.31\r
+\end{tabular}\r
+\end{ruledtabular}\r
+\caption{Binding energies of combinations of the C$_{\text{i}}$ \hkl[0 0 -1] defect with a substitutional C or vacancy located at positions 1 to 5 according to Fig.~\ref{fig:combos}. R corresponds to the position located at $\frac{a_{\text{Si}}}{2}\hkl[3 2 3]$ relative to the initial defect position, which is the maximum realizable distance due to periodic boundary conditions.}\r
+\label{table:dc_c-sv}\r
+\end{table}\r