-Furthermore, the migration barrier is still higher than the activation energy observed for a single C$_{\text{i}}$ \hkl<1 0 0> DB in c-Si.\r
-The migration barrier of a C$_{\text{i}}$ DB in a complex system is assumed to approximate the barrier in a separated system with increasing defect separation distance.\r
-Thus, lower migration barriers are expected for separating C$_{\text{i}}$ DBs.\r
-% calculate?!?\r
-However, low binding energies ... and the difference needs to be overcome too.\r
-It is bound to precapture state and only \r
-However if the activation energy is $>>$ than the difference in energy of the two configurations both states are equally occupied.\r
-And at increased temperatures that enable such diffusion processes the entropy comes into play.\r
-A promising configuration ... -2.25, and the amoun tof equivalent configurations is twice as high.\r
+Furthermore, the migration barrier of \unit[1.2]{eV} is still higher than the activation energy of \unit[0.9]{eV} observed for a single C$_{\text{i}}$ \hkl<1 0 0> DB in c-Si.\r
+The migration barrier of a C$_{\text{i}}$ DB in a complex system is assumed to approximate the barrier of a DB in a separated system with increasing defect separation.\r
+Thus, lower migration barriers are expected for pathways resulting in larger separations of the C$_{\text{i}}$ DBs.\r
+% calculate?!? ... hopefully acknowledged by 188-225 calc\r
+However, if the increase of separation is accompanied by an increase in binding energy, this difference is needed in addition to the activation energy for the respective migration process.\r
+Configurations, which exhibit both, a low binding energy as well as afferent transitions with low activation energies are, thus, most probable C$_{\text{i}}$ complex structures.\r
+On the other hand, if elevated temperatures enable migrations with huge activation energies, comparably small differences in configurational energy can be neglected resulting in an almost equal occupation of such configurations.\r
+In both cases the configuration yielding a binding energy of \unit[-2.25]{eV} is promising.\r
+First of all, it constitutes the second most energetically favorable structure.\r
+Secondly, a migration path with a barrier as low as \unit[?.?]{eV} exists starting from a configuration of largely separated defects exhibiting a low binding energy (\unit[-1.88]{eV}).\r
+The migration barrier and correpsonding structures are shown in Fig.~\ref{fig:188-225}.\r
+% 188 - 225 transition in progress\r
+\begin{figure}\r
+\includegraphics[width=\columnwidth]{188-225.ps}\r
+\caption{Migration barrier and structures of the transition of a C$_{\text{i}}$ \hkl[0 -1 0] DB at position 5 (left) into a C$_{\text{i}}$ \hkl[1 0 0] DB at position 1 (right). An activation energy of \unit[?.?]{eV} is observed.}\r
+\label{fig:188-225}\r
+\end{figure}\r
+Finally, this type of defect pair is represented four times (two times more often than the ground state configuration) within the systematically investigated configuration space.\r
+The latter is considered very important for high temperatures, which is accompanied by an increase in the entropic contribution to structure formation.\r