However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
... HIER WEITER ...\r
By this, explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate.\r
However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$.\r
... HIER WEITER ...\r
By this, explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate.\r