-Obviously the configuration of a \hkl[1 1 0] Si$_{\text{i}}$ DB and a next neighbored C$_{\text{s}}$ in the same direction as the alignment of the DB, as displayed in the bottom right of Fig.~\ref{fig:162-097}, enables the largest possible reduction of strain.\r
-The Si$_{\text{i}}$ DB atoms are displaced towards the lattice site occupied by the C$_{\text{s}}$ atom in such a way that the Si DB atom closest to the C atom does no longer form bonds to its top Si neighbors, but to the second next neighbored Si atom along \hkl[1 1 0].\r
-However, this configuration is energetically less favorable than the \hkl<1 0 0> C$_{\text{i}}$ DB, which, thus, remains the ground state of a C atom introduced into otherwise perfect c-Si.\r
+Obviously the configuration of a Si$_{\text{i}}$ \hkl[1 1 0] DB and a next neighbored C$_{\text{s}}$ atom along the bond chain, which has the same direction as the alignment of the DB, enables the largest possible reduction of strain.\r
+The relaxed structure is displayed in the bottom right of Fig.~\ref{fig:162-097}.\r
+Compressive strain originating from the Si$_{\text{i}}$ is compensated by tensile strain inherent to the C$_{\text{s}}$ configuration.\r
+The Si$_{\text{i}}$ DB atoms are displaced towards the lattice site occupied by the C$_{\text{s}}$ atom in such a way that the Si$_{\text{i}}$ DB atom closest to the C atom does no longer form bonds to its top Si neighbors, but to the second next neighbored Si atom along \hkl[1 1 0].\r
+\r
+However, the configuration is energetically less favorable than the \hkl<1 0 0> C$_{\text{i}}$ DB, which, thus, remains the ground state of a C atom introduced into otherwise perfect c-Si.\r