+\begin{figure}[!h]
+ \begin{center}
+ \begin{minipage}{8.25cm}
+ \includegraphics[width=8cm]{../plot/foo150.ps}
+ \end{minipage}
+ \begin{minipage}{8.25cm}
+ \includegraphics[width=8cm]{../plot/foo_end.ps}
+ \end{minipage}
+ \caption{Pair correlation functions for C-C and Si-C bonds.
+ Carbon atoms are introduced into the whole simulation volume (red), the region which corresponds to the size of a minimal SiC precipitation (green) and the volume which contains the necessary amount of silicon for a minimal precipitation (blue).}
+ \end{center}
+\end{figure}
+Fig. 4 shows results of the simulation runs targeting the observation of a precipitation event.
+The C-C pair correlation function suggests carbon nucleation for the simulation runs where carbon was inserted into the two smaller regions.
+The peak at $1.5\, \textrm{\AA}$ fits quite well the next neighbour distance of diamond.
+On the other hand the Si-C pair correlation function indicates formation of SiC bonds with an increased crystallinity for the simulation in which carbon is inserted into the whole simulation volume.
+There is more carbon forming Si-C bonds than C-C bonds.
+This gives suspect to the competition of Si-C and C-C bond formation in which the predominance of either of them depends on the method handling carbon insertion.
+
+\section*{Summary}
+The supposed conversion mechanism of heavily carbon doped silicon into silicon carbide is presented.
+Molecular dynamics simulation sequences to investigate interstitial configurations, the influence of interstitials on the atomic diffusion and the precipitation of SiC are proposed.
+The <100> C-Si dumbbel is reproducable by simulation and is the energetically most favorable configuration.
+The influence of silicon self interstitials on the diffusion of a single carbon atom is demonstrated.
+Two competing bond formations, either Si-C or C-C, seem to coexist, where the strength of either of them depends on the size of the region in which carbon is introduced.
+
+\bibliography{../../bibdb/bibdb}