+\begin{slide}
+
+ {\large\bf
+ Motivation / Introduction
+ }
+
+ \vspace{16pt}
+
+ Reasons for investigating C in Si:
+
+ \begin{itemize}
+ \item 3C-SiC wide band gap semiconductor formation
+ \item Strained Si (no precipitation wanted!)
+ \end{itemize}
+
+ \vspace{16pt}
+
+ Si / 3C-SiC facts:
+
+ \begin{minipage}{8cm}
+ \begin{itemize}
+ \item Unit cell:
+ \begin{itemize}
+ \item {\color{yellow}fcc} $+$
+ \item {\color{gray}fcc shifted $1/4$ of volume diagonal}
+ \end{itemize}
+ \item Lattice constants: $4a_{Si}\approx5a_{SiC}$
+ \item Silicon density:
+ \[
+ \frac{n_{SiC}}{n_{Si}}=
+ \frac{4/a_{SiC}^3}{8/a_{Si}^3}=
+ \frac{5^3}{2\cdot4^3}={\color{cyan}97,66}\,\%
+ \]
+ \end{itemize}
+ \end{minipage}
+ \hspace{8pt}
+ \begin{minipage}{4cm}
+ \includegraphics[width=4cm]{sic_unit_cell.eps}
+ \end{minipage}
+
+\end{slide}
+
+ \small