+ Szenarios:
+ \begin{enumerate}
+ \item $V_{ins}$: total simulation volume $V$
+ \item $V_{ins}$: $12\times12\times12$ SiC unit cells
+ ($\sim$ volume of minimal SiC precipitation)
+ \item $V_{ins}$: $9\times9\times9$ SiC unit cells
+ ($\sim$ volume of necessary amount of Si)
+ \end{enumerate}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Results
+ }
+
+ Si self-interstitial experiments:
+
+ {\footnotesize
+ {\bf Note:}
+ \begin{itemize}
+ \item $r_{cutoff}^{Si-Si}=2.96>\frac{5.43}{2}$
+ \item Bond length near $r_{cutoff} \Rightarrow$ small bond strength
+ \end{itemize}
+ }
+
+ \vspace{8pt}
+
+ \small
+
+ \begin{minipage}[t]{4.0cm}
+ \underline{Tetrahedral}
+ \begin{itemize}
+ \item $E_F=3.41\, eV$
+ \item essentialy tetrahedral\\
+ bonds
+ \end{itemize}
+ \end{minipage}
+ \hspace{0.3cm}
+ \begin{minipage}[t]{4.0cm}
+ \underline{110 dumbbell}
+ \begin{itemize}
+ \item $E_F=4.39\, eV$
+ \item essentially 4 bonds
+ \end{itemize}
+ \end{minipage}
+ \hspace{0.3cm}
+ \begin{minipage}[t]{4.0cm}
+ \underline{Hexagonal}