- Conventional thin film SiC growth:
- \begin{itemize}
- \item \underline{Sublimation growth using the modified Lely method}
- \begin{itemize}
- \item SiC single-crystalline seed at $T=1800 \, ^{\circ} \text{C}$
- \item Surrounded by polycrystalline SiC in a graphite crucible\\
- at $T=2100-2400 \, ^{\circ} \text{C}$
- \item Deposition of supersaturated vapor on cooler seed crystal
- \end{itemize}
- \item \underline{Homoepitaxial growth using CVD}
- \begin{itemize}
- \item Step-controlled epitaxy on off-oriented 6H-SiC substrates
- \item C$_3$H$_8$/SiH$_4$/H$_2$ at $1100-1500 \, ^{\circ} \text{C}$
- \item Angle, temperature $\rightarrow$ 3C/6H/4H-SiC
- \end{itemize}
- \item \underline{Heteroepitaxial growth of 3C-SiC on Si using CVD/MBE}
- \begin{itemize}
- \item Two steps: carbonization and growth
- \item $T=650-1050 \, ^{\circ} \text{C}$
- \item SiC/Si lattice mismatch $\approx$ 20 \%
- \item Quality and size not yet sufficient
- \end{itemize}
- \end{itemize}
-
- \begin{picture}(0,0)(-280,-65)
- \includegraphics[width=3.8cm]{6h-sic_3c-sic.eps}
- \end{picture}
- \begin{picture}(0,0)(-280,-55)
- \begin{minipage}{5cm}
- {\tiny
- NASA: 6H-SiC and 3C-SiC LED\\[-7pt]
- on 6H-SiC substrate
- }
- \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-265,-150)
- \includegraphics[width=2.4cm]{m_lely.eps}
- \end{picture}
- \begin{picture}(0,0)(-333,-175)
- \begin{minipage}{5cm}
- {\tiny
- 1. Lid\\[-7pt]
- 2. Heating\\[-7pt]
- 3. Source\\[-7pt]
- 4. Crucible\\[-7pt]
- 5. Insulation\\[-7pt]
- 6. Seed crystal
- }
- \end{minipage}
- \end{picture}
- \begin{picture}(0,0)(-230,-35)
- \framebox{
- {\footnotesize\color{blue}\bf Hex: micropipes along c-axis}
- }
- \end{picture}
- \begin{picture}(0,0)(-230,-10)
- \framebox{
- \begin{minipage}{3cm}
- {\footnotesize\color{blue}\bf 3C-SiC fabrication\\
- less advanced}
- \end{minipage}