- \item Si-C bumbs around 0.19 nm
- \item C-C peak at 0.31 nm (as expected in 3C-SiC):\\
- concatenated dumbbells of various orientation
- \item Si-Si NN distance stretched to 0.3 nm
+ \item Si-C bumbs around \unit[0.19]{nm}
+ \item C-C peak at \unit[0.31]{nm} (expected in 3C-SiC):\\
+ concatenated differently oriented \ci{} DBs
+ \item Si-Si NN distance stretched to \unit[0.3]{nm}
+\end{itemize}
+\begin{pspicture}(0,0)(6.0,1.0)
+\rput(3.2,0.5){\psframebox[linewidth=0.03cm,linecolor=blue]{
+\begin{minipage}{6cm}
+\centering
+Formation of \ci{} dumbbells\\
+C atoms in proper 3C-SiC distance first
+\end{minipage}
+}}
+\end{pspicture}\\[0.1cm]
+\underline{High C concentration --- {\color{green}$V_2$}/{\color{blue}$V_3$}}
+\begin{itemize}
+\item High amount of strongly bound C-C bonds
+\item Increased defect \& damage density\\
+ $\rightarrow$ Arrangements hard to categorize and trace
+\item Only short range order observable