+
+ \vspace{4cm}
+
+ \small
+
+\begin{tabular}{l c c c c c c}
+\hline
+ & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
+\hline
+Hardness [Mohs] & \multicolumn{3}{c}{------ 9.6 ------}& 6.5 & - & 10 \\
+Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
+Break down field [$10^6$ V/cm] & 4 & 3 & 3.2 & 0.6 & 5 & 10 \\
+Saturation drift velocity [$10^7$ cm/s] & 2.5 & 2.0 & 2.0 & 1 & 2.7 & 2.7 \\
+Electron mobility [cm$^2$/Vs] & 800 & 900 & 400 & 1100 & 900 & 2200 \\
+Hole mobility [cm$^2$/Vs] & 320 & 120 & 90 & 420 & 150 & 1600 \\
+Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
+\hline
+\end{tabular}
+
+{\tiny
+ Values for $T=300$ K
+}
+
+\begin{picture}(0,0)(-160,-155)
+ \includegraphics[width=7cm]{polytypes.eps}
+\end{picture}
+\begin{picture}(0,0)(-10,-185)
+ \includegraphics[width=3.8cm]{cubic_hex.eps}\\
+\end{picture}
+\begin{picture}(0,0)(-10,-175)
+ {\tiny cubic (twist)}
+\end{picture}
+\begin{picture}(0,0)(-60,-175)
+ {\tiny hexagonal (no twist)}
+\end{picture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=green](5.7,3.03)(0.4,0.5)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=green](5.6,1.68)(0.4,0.2)
+\end{pspicture}
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=red](10.7,1.13)(0.4,0.2)
+\end{pspicture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Fabrication of silicon carbide
+ }
+
+ \small