+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Fabrication of silicon carbide
+ }
+
+ \small
+
+ Alternative approach:
+ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
+ \begin{itemize}
+ \item \underline{Implantation step 1}\\
+ 180 keV C$^+$, $D=7.9\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=500\,^{\circ}\mathrm{C}$\\
+ $\Rightarrow$ box-like distribution of equally sized
+ and epitactically oriented SiC precipitates
+
+ \item \underline{Implantation step 2}\\
+ 180 keV C$^+$, $D=0.6\times 10^{17}$ cm$^{-2}$, $T_{\text{i}}=250\,^{\circ}\mathrm{C}$\\
+ $\Rightarrow$ destruction of SiC nanocrystals
+ in growing amorphous interface layers
+ \item \underline{Annealing}\\
+ $T=1250\,^{\circ}\mathrm{C}$, $t=10\,\text{h}$\\
+ $\Rightarrow$ homogeneous, stoichiometric SiC layer
+ with sharp interfaces
+ \end{itemize}
+
+ \begin{minipage}{6.3cm}
+ \includegraphics[width=6cm]{ibs_3c-sic.eps}\\[-0.2cm]
+ {\tiny
+ XTEM micrograph of single crystalline 3C-SiC in Si\hkl(1 0 0)
+ }
+ \end{minipage}
+\framebox{
+ \begin{minipage}{6.3cm}
+ \begin{center}
+ {\color{blue}
+ Precipitation mechanism not yet fully understood!
+ }
+ \renewcommand\labelitemi{$\Rightarrow$}
+ \small
+ \underline{Understanding the SiC precipitation}
+ \begin{itemize}
+ \item significant technological progress in SiC thin film formation
+ \item perspectives for processes relying upon prevention of SiC precipitation
+ \end{itemize}
+ \end{center}
+ \end{minipage}
+}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Supposed precipitation mechanism of SiC in Si
+ }
+
+ \scriptsize
+
+ \vspace{0.1cm}
+
+ \begin{minipage}{3.8cm}
+ Si \& SiC lattice structure\\[0.2cm]
+ \includegraphics[width=3.5cm]{sic_unit_cell.eps}\\[-0.3cm]
+ \hrule
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_c-si-db.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_3c-sic.eps}
+ \end{center}
+ \end{minipage}
+
+ \begin{minipage}{4cm}
+ \begin{center}
+ C-Si dimers (dumbbells)\\[-0.1cm]
+ on Si interstitial sites
+ \end{center}
+ \end{minipage}
+ \hspace{0.2cm}
+ \begin{minipage}{4.2cm}
+ \begin{center}
+ Agglomeration of C-Si dumbbells\\[-0.1cm]
+ $\Rightarrow$ dark contrasts
+ \end{center}
+ \end{minipage}
+ \hspace{0.2cm}
+ \begin{minipage}{4cm}
+ \begin{center}
+ Precipitation of 3C-SiC in Si\\[-0.1cm]
+ $\Rightarrow$ Moir\'e fringes\\[-0.1cm]
+ \& release of Si self-interstitials
+ \end{center}
+ \end{minipage}
+
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_01.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_02.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_03.eps}
+ \end{center}
+ \end{minipage}
+
+\begin{pspicture}(0,0)(0,0)
+\psline[linewidth=4pt]{->}(8.5,2)(9.0,2)
+\psellipse[linecolor=blue](11.5,5.8)(0.3,0.5)
+\rput{-20}{\psellipse[linecolor=blue](3.3,8.1)(0.3,0.5)}
+\psline[linewidth=4pt]{->}(4.0,2)(4.5,2)
+\end{pspicture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Molecular dynamics (MD) simulations
+ }
+
+ \vspace{12pt}
+
+ \small
+
+ {\bf MD basics:}
+ \begin{itemize}
+ \item Microscopic description of N particle system
+ \item Analytical interaction potential
+ \item Numerical integration using Newtons equation of motion\\
+ as a propagation rule in 6N-dimensional phase space
+ \item Observables obtained by time and/or ensemble averages
+ \end{itemize}
+ {\bf Details of the simulation:}
+ \begin{itemize}
+ \item Integration: Velocity Verlet, timestep: $1\text{ fs}$
+ \item Ensemble: NpT (isothermal-isobaric)
+ \begin{itemize}
+ \item Berendsen thermostat:
+ $\tau_{\text{T}}=100\text{ fs}$
+ \item Berendsen barostat:\\
+ $\tau_{\text{P}}=100\text{ fs}$,
+ $\beta^{-1}=100\text{ GPa}$
+ \end{itemize}
+ \item Erhart/Albe potential: Tersoff-like bond order potential
+ \vspace*{12pt}
+ \[
+ E = \frac{1}{2} \sum_{i \neq j} \pot_{ij}, \quad
+ \pot_{ij} = f_C(r_{ij}) \left[ f_R(r_{ij}) + b_{ij} f_A(r_{ij}) \right]
+ \]
+ \end{itemize}
+
+ \begin{picture}(0,0)(-230,-30)
+ \includegraphics[width=5cm]{tersoff_angle.eps}
+ \end{picture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Density functional theory (DFT) calculations
+ }
+
+ \small
+
+ Basic ingredients necessary for DFT
+
+ \begin{itemize}
+ \item \underline{Hohenberg-Kohn theorem} - ground state density $n_0(r)$ ...
+ \begin{itemize}
+ \item ... uniquely determines the ground state potential
+ / wavefunctions
+ \item ... minimizes the systems total energy
+ \end{itemize}
+ \item \underline{Born-Oppenheimer}
+ - $N$ moving electrons in an external potential of static nuclei
+\[
+H\Psi = \left[-\sum_i^N \frac{\hbar^2}{2m}\nabla_i^2
+ +\sum_i^N V_{\text{ext}}(r_i)
+ +\sum_{i<j}^N V_{e-e}(r_i,r_j)\right]\Psi=E\Psi
+\]
+ \item \underline{Effective potential}
+ - averaged electrostatic potential \& exchange and correlation
+\[
+V_{\text{eff}}(r)=V_{\text{ext}}(r)+\int\frac{e^2 n(r')}{|r-r'|}d^3r'
+ +V_{\text{XC}}[n(r)]
+\]
+ \item \underline{Kohn-Sham system}
+ - Schr\"odinger equation of N non-interacting particles
+\[
+\left[ -\frac{\hbar^2}{2m}\nabla^2 + V_{\text{eff}}(r) \right] \Phi_i(r)
+=\epsilon_i\Phi_i(r)
+\quad
+\Rightarrow
+\quad
+n(r)=\sum_i^N|\Phi_i(r)|^2
+\]
+ \item \underline{Self-consistent solution}\\
+$n(r)$ depends on $\Phi_i$, which depends on $V_{\text{eff}}$,
+which in turn depends on $n(r)$
+ \item \underline{Variational principle}
+ - minimize total energy with respect to $n(r)$
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Density functional theory (DFT) calculations
+ }
+
+ \small
+
+ \vspace*{0.2cm}
+
+ Details of applied DFT calculations in this work
+
+ \begin{itemize}
+ \item \underline{Exchange correlation functional}
+ - approximations for the inhomogeneous electron gas
+ \begin{itemize}
+ \item LDA: $E_{\text{XC}}^{\text{LDA}}[n]=\int \epsilon_{\text{XC}}(n)n(r)d^3r$
+ \item GGA: $E_{\text{XC}}^{\text{GGA}}[n]=\int \epsilon_{\text{XC}}(n,\nabla n)n(r)d^3r$
+ \end{itemize}
+ \item \underline{Plane wave basis set}
+ - approximation of the wavefunction $\Phi_i$ by plane waves $\phi_j$
+\[
+\rightarrow
+\text{Fourier series: } \Phi_i=\sum_{|G+k|<G_{\text{cut}}} c_j^i \phi_j(r), \quad E_{\text{cut}}=\frac{\hbar^2}{2m}G^2_{\text{cut}}
+\]
+ \item \underline{$k$-point sampling} - $\Gamma$-point only calculations
+ \item \underline{Pseudo potential}
+ - consider only the valence electrons
+ \item \underline{Code} - VASP 4.6
+ \end{itemize}
+
+ \vspace*{0.2cm}
+
+ MD and structural optimization
+
+ \begin{itemize}
+ \item MD integration: Gear predictor corrector algorithm
+ \item Pressure control: Parrinello-Rahman pressure control
+ \item Structural optimization: Conjugate gradient method
+ \end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ C and Si self-interstitial point defects in silicon
+ }
+
+ \small
+
+ \vspace*{0.3cm}
+
+\begin{minipage}{8cm}
+Procedure:\\[0.3cm]
+ \begin{pspicture}(0,0)(7,5)
+ \rput(3.5,4){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{
+ \parbox{7cm}{
+ \begin{itemize}
+ \item Creation of c-Si simulation volume
+ \item Periodic boundary conditions
+ \item $T=0\text{ K}$, $p=0\text{ bar}$
+ \end{itemize}
+ }}}}
+\rput(3.5,2.1){\rnode{insert}{\psframebox{
+ \parbox{7cm}{
+ \begin{center}
+ Insertion of interstitial C/Si atoms
+ \end{center}
+ }}}}
+ \rput(3.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{
+ \parbox{7cm}{
+ \begin{center}
+ Relaxation / structural energy minimization
+ \end{center}
+ }}}}
+ \ncline[]{->}{init}{insert}
+ \ncline[]{->}{insert}{cool}
+ \end{pspicture}
+\end{minipage}
+\begin{minipage}{5cm}
+ \includegraphics[width=5cm]{unit_cell_e.eps}\\
+\end{minipage}
+
+\begin{minipage}{9cm}
+ \begin{tabular}{l c c}
+ \hline
+ & size [unit cells] & \# atoms\\
+\hline
+VASP & $3\times 3\times 3$ & $216\pm 1$ \\
+Erhart/Albe & $9\times 9\times 9$ & $5832\pm 1$\\
+\hline
+ \end{tabular}
+\end{minipage}
+\begin{minipage}{4cm}
+{\color{red}$\bullet$} Tetrahedral\\
+{\color{green}$\bullet$} Hexagonal\\
+{\color{yellow}$\bullet$} \hkl<1 0 0> dumbbell\\
+{\color{magenta}$\bullet$} \hkl<1 1 0> dumbbell\\
+{\color{cyan}$\bullet$} Bond-centered\\
+{\color{black}$\bullet$} Vacancy / Substitutional
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ \footnotesize
+
+\begin{minipage}{9.5cm}
+
+ {\large\bf
+ Si self-interstitial point defects in silicon\\
+ }
+
+\begin{tabular}{l c c c c c}
+\hline
+ $E_{\text{f}}$ [eV] & \hkl<1 1 0> DB & H & T & \hkl<1 0 0> DB & V \\
+\hline
+ VASP & \underline{3.39} & 3.42 & 3.77 & 4.41 & 3.63 \\
+ Erhart/Albe & 4.39 & 4.48$^*$ & \underline{3.40} & 5.42 & 3.13 \\
+\hline
+\end{tabular}\\[0.2cm]
+
+\begin{minipage}{4.7cm}
+\includegraphics[width=4.7cm]{e_kin_si_hex.ps}
+\end{minipage}
+\begin{minipage}{4.7cm}
+\begin{center}
+{\tiny nearly T $\rightarrow$ T}\\
+\end{center}
+\includegraphics[width=4.7cm]{nhex_tet.ps}
+\end{minipage}\\
+
+\underline{Hexagonal} \hspace{2pt}
+\href{../video/si_self_int_hexa.avi}{$\rhd$}\\[0.1cm]
+\framebox{
+\begin{minipage}{2.7cm}
+$E_{\text{f}}^*=4.48\text{ eV}$\\
+\includegraphics[width=2.7cm]{si_pd_albe/hex_a.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+\begin{center}
+$\Rightarrow$
+\end{center}
+\end{minipage}
+\begin{minipage}{2.7cm}
+$E_{\text{f}}=3.96\text{ eV}$\\
+\includegraphics[width=2.8cm]{si_pd_albe/hex.eps}
+\end{minipage}
+}
+\begin{minipage}{2.9cm}
+\begin{flushright}
+\underline{Vacancy}\\
+\includegraphics[width=3.0cm]{si_pd_albe/vac.eps}
+\end{flushright}
+\end{minipage}
+
+\end{minipage}
+\begin{minipage}{3.5cm}
+
+\begin{flushright}
+\underline{\hkl<1 1 0> dumbbell}\\
+\includegraphics[width=3.0cm]{si_pd_albe/110.eps}\\
+\underline{Tetrahedral}\\
+\includegraphics[width=3.0cm]{si_pd_albe/tet.eps}\\
+\underline{\hkl<1 0 0> dumbbell}\\
+\includegraphics[width=3.0cm]{si_pd_albe/100.eps}
+\end{flushright}
+
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+\footnotesize
+
+ {\large\bf
+ C interstitial point defects in silicon\\[-0.1cm]
+ }
+
+\begin{tabular}{l c c c c c c}
+\hline
+ $E_{\text{f}}$ & T & H & \hkl<1 0 0> DB & \hkl<1 1 0> DB & S & B \\
+\hline
+ VASP & unstable & unstable & \underline{3.72} & 4.16 & 1.95 & 4.66 \\
+ Erhart/Albe MD & 6.09 & 9.05$^*$ & \underline{3.88} & 5.18 & 0.75 & 5.59$^*$ \\
+\hline
+\end{tabular}\\[0.1cm]
+
+\framebox{
+\begin{minipage}{2.7cm}
+\underline{Hexagonal} \hspace{2pt}
+\href{../video/c_in_si_int_hexa.avi}{$\rhd$}\\
+$E_{\text{f}}^*=9.05\text{ eV}$\\
+\includegraphics[width=2.7cm]{c_pd_albe/hex.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+\begin{center}
+$\Rightarrow$
+\end{center}
+\end{minipage}
+\begin{minipage}{2.7cm}
+\underline{\hkl<1 0 0>}\\
+$E_{\text{f}}=3.88\text{ eV}$\\
+\includegraphics[width=2.7cm]{c_pd_albe/100.eps}
+\end{minipage}
+}
+\begin{minipage}{2cm}
+\hfill
+\end{minipage}
+\begin{minipage}{3cm}
+\begin{flushright}
+\underline{Tetrahedral}\\
+\includegraphics[width=3.0cm]{c_pd_albe/tet.eps}
+\end{flushright}
+\end{minipage}
+
+\framebox{
+\begin{minipage}{2.7cm}
+\underline{Bond-centered}\\
+$E_{\text{f}}^*=5.59\text{ eV}$\\
+\includegraphics[width=2.7cm]{c_pd_albe/bc.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+\begin{center}
+$\Rightarrow$
+\end{center}
+\end{minipage}
+\begin{minipage}{2.7cm}
+\underline{\hkl<1 1 0> dumbbell}\\
+$E_{\text{f}}=5.18\text{ eV}$\\
+\includegraphics[width=2.7cm]{c_pd_albe/110.eps}
+\end{minipage}
+}
+\begin{minipage}{2cm}
+\hfill
+\end{minipage}
+\begin{minipage}{3cm}
+\begin{flushright}
+\underline{Substitutional}\\
+\includegraphics[width=3.0cm]{c_pd_albe/sub.eps}
+\end{flushright}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+\footnotesize
+
+ {\large\bf\boldmath
+ C \hkl<1 0 0> dumbbell interstitial configuration\\
+ }
+
+{\tiny
+\begin{tabular}{l c c c c c c c c}
+\hline
+ Distances [nm] & $r(1C)$ & $r(2C)$ & $r(3C)$ & $r(12)$ & $r(13)$ & $r(34)$ & $r(23)$ & $r(25)$ \\
+\hline
+Erhart/Albe & 0.175 & 0.329 & 0.186 & 0.226 & 0.300 & 0.343 & 0.423 & 0.425 \\
+VASP & 0.174 & 0.341 & 0.182 & 0.229 & 0.286 & 0.347 & 0.422 & 0.417 \\
+\hline
+\end{tabular}\\[0.2cm]
+\begin{tabular}{l c c c c }
+\hline
+ Angles [$^{\circ}$] & $\theta_1$ & $\theta_2$ & $\theta_3$ & $\theta_4$ \\
+\hline
+Erhart/Albe & 140.2 & 109.9 & 134.4 & 112.8 \\
+VASP & 130.7 & 114.4 & 146.0 & 107.0 \\
+\hline
+\end{tabular}\\[0.2cm]
+\begin{tabular}{l c c c}
+\hline
+ Displacements [nm]& $a$ & $b$ & $|a|+|b|$ \\
+\hline
+Erhart/Albe & 0.084 & -0.091 & 0.175 \\
+VASP & 0.109 & -0.065 & 0.174 \\
+\hline
+\end{tabular}\\[0.6cm]
+}
+
+\begin{minipage}{3.0cm}
+\begin{center}
+\underline{Erhart/Albe}
+\includegraphics[width=3.0cm]{c_pd_albe/100_cmp.eps}
+\end{center}
+\end{minipage}
+\begin{minipage}{3.0cm}
+\begin{center}
+\underline{VASP}
+\includegraphics[width=3.0cm]{c_pd_vasp/100_cmp.eps}
+\end{center}
+\end{minipage}\\
+
+\begin{picture}(0,0)(-185,10)
+\includegraphics[width=6.8cm]{100-c-si-db_cmp.eps}
+\end{picture}
+\begin{picture}(0,0)(-280,-150)
+\includegraphics[width=3.3cm]{c_pd_vasp/eden.eps}
+\end{picture}
+
+\begin{pspicture}(0,0)(0,0)
+\psellipse[linecolor=green](5.18,5.92)(0.5,0.3)
+\psellipse[linecolor=red](3.45,5.92)(1.0,0.4)
+\psellipse[linecolor=blue](2.7,6.92)(0.9,0.2)
+\psellipse[linecolor=blue](4.65,6.92)(0.9,0.2)
+\end{pspicture}
+
+\end{slide}
+
+\begin{slide}
+
+\small
+
+\begin{minipage}{8.5cm}
+
+ {\large\bf
+ Bond-centered interstitial configuration\\[-0.1cm]
+ }
+
+\begin{minipage}{3.0cm}
+\includegraphics[width=2.8cm]{c_pd_vasp/bc_2333.eps}\\
+\end{minipage}
+\begin{minipage}{5.2cm}
+\begin{itemize}
+ \item Linear Si-C-Si bond
+ \item Si: one C \& 3 Si neighbours
+ \item Spin polarized calculations
+ \item No saddle point!\\
+ Real local minimum!
+\end{itemize}
+\end{minipage}
+
+\framebox{
+ \tiny
+ \begin{minipage}[t]{6.5cm}
+ \begin{minipage}[t]{1.2cm}
+ {\color{red}Si}\\
+ {\tiny sp$^3$}\\[0.8cm]
+ \underline{${\color{black}\uparrow}$}
+ \underline{${\color{black}\uparrow}$}
+ \underline{${\color{black}\uparrow}$}
+ \underline{${\color{red}\uparrow}$}\\
+ sp$^3$
+ \end{minipage}
+ \begin{minipage}[t]{1.4cm}
+ \begin{center}
+ {\color{red}M}{\color{blue}O}\\[0.8cm]
+ \underline{${\color{blue}\uparrow}{\color{white}\downarrow}$}\\
+ $\sigma_{\text{ab}}$\\[0.5cm]
+ \underline{${\color{red}\uparrow}{\color{blue}\downarrow}$}\\
+ $\sigma_{\text{b}}$
+ \end{center}
+ \end{minipage}
+ \begin{minipage}[t]{1.0cm}
+ \begin{center}
+ {\color{blue}C}\\
+ {\tiny sp}\\[0.2cm]
+ \underline{${\color{white}\uparrow\uparrow}$}
+ \underline{${\color{white}\uparrow\uparrow}$}\\
+ 2p\\[0.4cm]
+ \underline{${\color{blue}\uparrow}{\color{blue}\downarrow}$}
+ \underline{${\color{blue}\uparrow}{\color{blue}\downarrow}$}\\
+ sp
+ \end{center}
+ \end{minipage}
+ \begin{minipage}[t]{1.4cm}
+ \begin{center}
+ {\color{blue}M}{\color{green}O}\\[0.8cm]
+ \underline{${\color{blue}\uparrow}{\color{white}\downarrow}$}\\
+ $\sigma_{\text{ab}}$\\[0.5cm]
+ \underline{${\color{green}\uparrow}{\color{blue}\downarrow}$}\\
+ $\sigma_{\text{b}}$
+ \end{center}
+ \end{minipage}
+ \begin{minipage}[t]{1.2cm}
+ \begin{flushright}
+ {\color{green}Si}\\
+ {\tiny sp$^3$}\\[0.8cm]
+ \underline{${\color{green}\uparrow}$}
+ \underline{${\color{black}\uparrow}$}
+ \underline{${\color{black}\uparrow}$}
+ \underline{${\color{black}\uparrow}$}\\
+ sp$^3$
+ \end{flushright}
+ \end{minipage}
+ \end{minipage}
+}\\[0.1cm]
+
+\framebox{
+\begin{minipage}{4.5cm}
+\includegraphics[width=4cm]{c_100_mig_vasp/im_spin_diff.eps}
+\end{minipage}
+\begin{minipage}{3.5cm}
+{\color{gray}$\bullet$} Spin up\\
+{\color{green}$\bullet$} Spin down\\
+{\color{blue}$\bullet$} Resulting spin up\\
+{\color{yellow}$\bullet$} Si atoms\\
+{\color{red}$\bullet$} C atom
+\end{minipage}
+}
+
+\end{minipage}
+\begin{minipage}{4.2cm}
+\begin{flushright}
+\includegraphics[width=4.3cm]{c_pd_vasp/bc_2333_ksl.ps}\\
+{\color{green}$\Box$} {\tiny unoccupied}\\
+{\color{red}$\bullet$} {\tiny occupied}
+\end{flushright}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Migration of the C \hkl<1 0 0> dumbbell interstitial
+ }
+
+\scriptsize
+
+ {\small Investigated pathways}
+
+\begin{minipage}{8.5cm}
+\begin{minipage}{8.3cm}
+\underline{\hkl<0 0 -1> $\rightarrow$ \hkl<0 0 1>}\\
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/100_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/bc_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/100_next_2333.eps}
+\end{minipage}
+\end{minipage}\\
+\begin{minipage}{8.3cm}
+\underline{\hkl<0 0 -1> $\rightarrow$ \hkl<0 -1 0>}\\
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/100_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/00-1-0-10_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/0-10_2333.eps}
+\end{minipage}
+\end{minipage}\\
+\begin{minipage}{8.3cm}
+\underline{\hkl<0 0 -1> $\rightarrow$ \hkl<0 -1 0> (in place)}\\
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/100_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/00-1_ip0-10_2333.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{2.4cm}
+\includegraphics[width=2.4cm]{c_pd_vasp/0-10_ip_2333.eps}
+\end{minipage}
+\end{minipage}
+\end{minipage}
+\framebox{
+\begin{minipage}{4.2cm}
+ {\small Constrained relaxation\\
+ technique (CRT) method}\\
+\includegraphics[width=4cm]{crt_orig.eps}
+\begin{itemize}
+ \item Constrain diffusing atom
+ \item Static constraints
+\end{itemize}
+\vspace*{0.3cm}
+ {\small Modifications}\\
+\includegraphics[width=4cm]{crt_mod.eps}
+\begin{itemize}
+ \item Constrain all atoms
+ \item Update individual\\
+ constraints
+\end{itemize}
+\end{minipage}
+}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Migration of the C \hkl<1 0 0> dumbbell interstitial
+ }
+
+\scriptsize
+
+\framebox{
+\begin{minipage}{5.9cm}
+\begin{flushleft}
+\includegraphics[width=5.8cm]{im_00-1_nosym_sp_fullct_thesis.ps}\\[0.45cm]
+\end{flushleft}
+\begin{center}
+\begin{picture}(0,0)(60,0)
+\includegraphics[width=1cm]{vasp_mig/00-1.eps}
+\end{picture}
+\begin{picture}(0,0)(-5,0)
+\includegraphics[width=1cm]{vasp_mig/bc_00-1_sp.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,0)
+\includegraphics[width=1cm]{vasp_mig/bc.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,10)
+\includegraphics[width=1cm]{110_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,0)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace*{0.35cm}
+\end{minipage}
+}
+\begin{minipage}{0.3cm}
+\hfill
+\end{minipage}
+\framebox{
+\begin{minipage}{5.9cm}
+\begin{flushright}
+\includegraphics[width=5.9cm]{vasp_mig/00-1_0-10_nosym_sp_fullct.ps}\\[0.5cm]
+\end{flushright}
+\begin{center}
+\begin{picture}(0,0)(60,0)
+\includegraphics[width=1cm]{vasp_mig/00-1_a.eps}
+\end{picture}
+\begin{picture}(0,0)(5,0)
+\includegraphics[width=1cm]{vasp_mig/00-1_0-10_sp.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,0)
+\includegraphics[width=1cm]{vasp_mig/0-10.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,10)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,0)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace*{0.3cm}
+\end{minipage}\\
+}
+
+\vspace*{0.05cm}
+
+\framebox{
+\begin{minipage}{5.9cm}
+\begin{flushleft}
+\includegraphics[width=5.9cm]{vasp_mig/00-1_ip0-10_nosym_sp_fullct.ps}\\[0.6cm]
+\end{flushleft}
+\begin{center}
+\begin{picture}(0,0)(60,0)
+\includegraphics[width=0.9cm]{vasp_mig/00-1_b.eps}
+\end{picture}
+\begin{picture}(0,0)(10,0)
+\includegraphics[width=0.9cm]{vasp_mig/00-1_ip0-10_sp.eps}
+\end{picture}
+\begin{picture}(0,0)(-60,0)
+\includegraphics[width=0.9cm]{vasp_mig/0-10_b.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,10)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,0)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace*{0.3cm}
+\end{minipage}
+}
+\begin{minipage}{0.3cm}
+\hfill
+\end{minipage}
+\begin{minipage}{6.5cm}
+VASP results
+\begin{itemize}
+ \item Energetically most favorable path
+ \begin{itemize}
+ \item Path 2
+ \item Activation energy: $\approx$ 0.9 eV
+ \item Experimental values: 0.73 ... 0.87 eV
+ \end{itemize}
+ $\Rightarrow$ {\color{blue}Diffusion} path identified!
+ \item Reorientation (path 3)
+ \begin{itemize}
+ \item More likely composed of two consecutive steps of type 2
+ \item Experimental values: 0.77 ... 0.88 eV
+ \end{itemize}
+ $\Rightarrow$ {\color{blue}Reorientation} transition identified!
+\end{itemize}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Migration of the C \hkl<1 0 0> dumbbell interstitial
+ }
+
+\scriptsize
+
+\begin{minipage}{6.5cm}
+
+\framebox{
+\begin{minipage}{5.9cm}
+\begin{flushleft}
+\includegraphics[width=5.9cm]{bc_00-1.ps}\\[2.35cm]
+\end{flushleft}
+\begin{center}
+\begin{pspicture}(0,0)(0,0)
+\psframe[linecolor=red,fillstyle=none](-2.8,1.35)(3.3,2.7)
+\end{pspicture}
+\begin{picture}(0,0)(60,-50)
+\includegraphics[width=1cm]{albe_mig/bc_00-1_red_00.eps}
+\end{picture}
+\begin{picture}(0,0)(5,-50)
+\includegraphics[width=1cm]{albe_mig/bc_00-1_red_01.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,-50)
+\includegraphics[width=1cm]{albe_mig/bc_00-1_red_02.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,-40)
+\includegraphics[width=1cm]{110_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,-45)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}\\
+\begin{pspicture}(0,0)(0,0)
+\psframe[linecolor=blue,fillstyle=none](-2.8,0)(3.3,1.6)
+\end{pspicture}
+\begin{picture}(0,0)(60,-15)
+\includegraphics[width=0.9cm]{albe_mig/bc_00-1_01.eps}
+\end{picture}
+\begin{picture}(0,0)(35,-15)
+\includegraphics[width=0.9cm]{albe_mig/bc_00-1_02.eps}
+\end{picture}
+\begin{picture}(0,0)(-5,-15)
+\includegraphics[width=0.9cm]{albe_mig/bc_00-1_03.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,-15)
+\includegraphics[width=0.9cm]{albe_mig/bc_00-1_04.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,-5)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,-15)
+\includegraphics[height=0.9cm]{010_arrow.eps}
+\end{picture}
+\end{center}
+\end{minipage}
+}\\[0.1cm]
+
+\begin{minipage}{5.9cm}
+Erhart/Albe results
+\begin{itemize}
+ \item Lowest activation energy: $\approx$ 2.2 eV
+ \item 2.4 times higher than VASP
+ \item Different pathway
+ \item Transition minima ($\rightarrow$ \hkl<1 1 0> dumbbell)
+\end{itemize}
+\end{minipage}
+
+\end{minipage}
+\begin{minipage}{6.5cm}
+
+\framebox{
+\begin{minipage}{5.9cm}
+\begin{flushright}
+\includegraphics[width=5.9cm]{00-1_0-10.ps}\\[0.75cm]
+\end{flushright}
+\begin{center}
+\begin{pspicture}(0,0)(0,0)
+\psframe[linecolor=red,fillstyle=none](-2.8,-0.25)(3.3,1.1)
+\end{pspicture}
+\begin{picture}(0,0)(60,-5)
+\includegraphics[width=0.9cm]{albe_mig/00-1_0-10_red_00.eps}
+\end{picture}
+\begin{picture}(0,0)(0,-5)
+\includegraphics[width=0.9cm]{albe_mig/00-1_0-10_red_min.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,-5)
+\includegraphics[width=0.9cm]{albe_mig/00-1_0-10_red_03.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,5)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(90,0)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace{0.2cm}
+\end{minipage}
+}\\[0.2cm]
+
+\framebox{
+\begin{minipage}{5.9cm}
+\includegraphics[width=5.9cm]{00-1_ip0-10.ps}
+\end{minipage}
+}
+
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Migrations involving the C \hkl<1 1 0> dumbbell interstitial
+ }
+
+\small
+
+\vspace*{0.1cm}
+
+VASP
+
+\begin{minipage}{6.0cm}
+\includegraphics[width=6cm]{vasp_mig/110_mig_vasp.ps}
+\end{minipage}
+\begin{minipage}{7cm}
+\underline{Alternative pathway and energies [eV]}\\[0.1cm]
+\hkl<0 -1 0> $\stackrel{0.7}{{\color{red}\longrightarrow}}$
+\hkl<1 1 0> $\stackrel{0.95}{{\color{blue}\longrightarrow}}$
+BC $\stackrel{0.25}{\longrightarrow}$ \hkl<0 0 -1>\\[0.3cm]
+Composed of three single transitions\\[0.3cm]
+Activation energy of second transition slightly\\
+higher than direct transition (path 2)\\[0.3cm]
+$\Rightarrow$ very unlikely to happen
+\end{minipage}\\[0.2cm]
+
+Erhart/Albe
+
+\begin{minipage}{6.0cm}
+\includegraphics[width=6cm]{110_mig.ps}
+\end{minipage}
+\begin{minipage}{7cm}
+\underline{Alternative pathway and energies [eV]}\\[0.1cm]
+\hkl<0 0 -1> $\stackrel{2.2}{{\color{green}\longrightarrow}}$
+\hkl<1 1 0> $\stackrel{0.9}{{\color{red}\longrightarrow}}$
+\hkl<0 0 -1>\\[0.3cm]
+Composed of two single transitions\\[0.3cm]
+Compared to direct transition: (2.2 eV \& 0.5 eV)\\[0.3cm]
+$\Rightarrow$ more readily constituting a probable transition
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Combinations with a C-Si \hkl<1 0 0>-type interstitial
+ }
+
+\small
+
+\vspace*{0.1cm}
+
+Binding energy:
+$
+E_{\text{b}}=
+E_{\text{f}}^{\text{defect combination}}-
+E_{\text{f}}^{\text{C \hkl<0 0 -1> dumbbell}}-
+E_{\text{f}}^{\text{2nd defect}}
+$
+
+\vspace*{0.1cm}
+
+{\scriptsize
+\begin{tabular}{l c c c c c c}
+\hline
+ $E_{\text{b}}$ [eV] & 1 & 2 & 3 & 4 & 5 & R\\
+ \hline
+ \hkl<0 0 -1> & {\color{red}-0.08} & -1.15 & {\color{red}-0.08} & 0.04 & -1.66 & -0.19\\
+ \hkl<0 0 1> & 0.34 & 0.004 & -2.05 & 0.26 & -1.53 & -0.19\\
+ \hkl<0 -1 0> & {\color{orange}-2.39} & -0.17 & {\color{green}-0.10} & {\color{blue}-0.27} & {\color{magenta}-1.88} & {\color{gray}-0.05}\\
+ \hkl<0 1 0> & {\color{cyan}-2.25} & -1.90 & {\color{cyan}-2.25} & {\color{purple}-0.12} & {\color{violet}-1.38} & {\color{yellow}-0.06}\\
+ \hkl<-1 0 0> & {\color{orange}-2.39} & -0.36 & {\color{cyan}-2.25} & {\color{purple}-0.12} & {\color{magenta}-1.88} & {\color{gray}-0.05}\\
+ \hkl<1 0 0> & {\color{cyan}-2.25} & -2.16 & {\color{green}-0.10} & {\color{blue}-0.27} & {\color{violet}-1.38} & {\color{yellow}-0.06}\\
+ \hline
+ C substitutional (C$_{\text{S}}$) & 0.26 & -0.51 & -0.93 & -0.15 & 0.49 & -0.05\\
+ Vacancy & -5.39 ($\rightarrow$ C$_{\text{S}}$) & -0.59 & -3.14 & -0.54 & -0.50 & -0.31\\
+\hline
+\end{tabular}
+}
+
+\vspace*{0.3cm}
+
+\footnotesize
+
+\begin{minipage}[t]{3.8cm}
+\underline{\hkl<1 0 0> at position 1}\\[0.1cm]
+\includegraphics[width=3.5cm]{00-1dc/2-25.eps}
+\end{minipage}
+\begin{minipage}[t]{3.5cm}
+\underline{\hkl<0 -1 0> at position 1}\\[0.1cm]
+\includegraphics[width=3.2cm]{00-1dc/2-39.eps}
+\end{minipage}
+\begin{minipage}[t]{5.5cm}
+\begin{itemize}
+ \item Restricted to VASP simulations
+ \item $E_{\text{b}}=0$ for isolated non-interacting defects
+ \item $E_{\text{b}} \rightarrow 0$ for increasing distance (R)
+ \item Stress compensation / increase
+ \item Most favorable: C clustering
+ \item Unfavored: antiparallel orientations
+ \item Indication of energetically favored\\
+ agglomeration
+\end{itemize}
+\end{minipage}
+
+\begin{picture}(0,0)(-295,-130)
+\includegraphics[width=3.5cm]{comb_pos.eps}
+\end{picture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Combinations of C-Si \hkl<1 0 0>-type interstitials
+ }
+
+\small
+
+\vspace*{0.1cm}
+
+Energetically most favorable combinations along \hkl<1 1 0>
+
+{\scriptsize
+\begin{tabular}{l c c c c c c}
+\hline
+ & 1 & 2 & 3 & 4 & 5 & 6\\
+\hline
+$E_{\text{b}}$ [eV] & -2.39 & -1.88 & -0.59 & -0.31 & -0.24 & -0.21 \\
+C-C distance [\AA] & 1.4 & 4.6 & 6.5 & 8.6 & 10.5 & 10.8 \\
+Type & \hkl<-1 0 0> & \hkl<1 0 0> & \hkl<1 0 0> & \hkl<1 0 0> & \hkl<1 0 0> & \hkl<1 0 0>, \hkl<0 -1 0>\\
+\hline
+\end{tabular}
+}
+
+\vspace*{0.1cm}
+
+\begin{minipage}{7.0cm}
+\includegraphics[width=7cm,draft=false]{db_along_110_cc.ps}
+\end{minipage}
+\begin{minipage}{6.0cm}
+\begin{itemize}
+ \item Interaction proportional to reciprocal cube of C-C distance
+ \item
+ \item
+\end{itemize}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Combinations of substitutional C and \hkl<1 1 0> Si self-interstitials
+ }
+
+ \small
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Migration of combined defects
+ }
+
+ \small
+
+ present (describe) two starting confs, i.e. vac in c-Si
+
+ present migration results $\rightarrow$ SiC
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Silicon carbide precipitation simulations
+ }
+
+ \small
+
+ restricted to classical MD
+
+ explain procedure
+
+ then there is:
+
+ 1. temperature as in exps
+
+ 2. exkurs: limitations of conv...
+
+ 3. increased temp ... high and low
+
+ 4. temperature limit
+
+ 5. final TODO
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Silicon carbide precipitation simulations
+ }
+
+ \small
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Investigation of a silicon carbide precipitate in silicon
+ }
+
+ \small
+
+
+