+ \footnotesize
+
+\vspace{0.1cm}
+
+\begin{minipage}[t]{3cm}
+\underline{Pos 2, $E_{\text{b}}=-0.59\text{ eV}$}\\
+\includegraphics[width=2.8cm]{00-1dc/0-59.eps}
+\end{minipage}
+\begin{minipage}[t]{7cm}
+\vspace{0.2cm}
+\begin{center}
+ Low activation energies\\
+ High activation energies for reverse processes\\
+ $\Downarrow$\\
+ {\color{blue}C$_{\text{sub}}$ very stable}\\
+\vspace*{0.1cm}
+ \hrule
+\vspace*{0.1cm}
+ Without nearby \hkl<1 1 0> Si self-interstitial (IBS)\\
+ $\Downarrow$\\
+ {\color{blue}Formation of SiC by successive substitution by C}
+
+\end{center}
+\end{minipage}
+\begin{minipage}[t]{3cm}
+\underline{Pos 3, $E_{\text{b}}=-3.14\text{ eV}$}\\
+\includegraphics[width=2.8cm]{00-1dc/3-14.eps}
+\end{minipage}
+
+
+\framebox{
+\begin{minipage}{5.9cm}
+\includegraphics[width=5.9cm]{vasp_mig/comb_mig_3-2_vac_fullct.ps}\\[0.6cm]
+\begin{center}
+\begin{picture}(0,0)(70,0)
+\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_init.eps}
+\end{picture}
+\begin{picture}(0,0)(30,0)
+\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_03.eps}
+\end{picture}
+\begin{picture}(0,0)(-10,0)
+\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_06.eps}
+\end{picture}
+\begin{picture}(0,0)(-48,0)
+\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_final.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,5)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(97,-10)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace{0.1cm}
+\end{minipage}
+}
+\begin{minipage}{0.3cm}
+\hfill
+\end{minipage}
+\framebox{
+\begin{minipage}{5.9cm}
+\includegraphics[width=5.9cm]{vasp_mig/comb_mig_4-2_vac_fullct.ps}\\[0.1cm]
+\begin{center}
+\begin{picture}(0,0)(60,0)
+\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_init.eps}
+\end{picture}
+\begin{picture}(0,0)(25,0)
+\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_03.eps}
+\end{picture}
+\begin{picture}(0,0)(-20,0)
+\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_07.eps}
+\end{picture}
+\begin{picture}(0,0)(-55,0)
+\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_final.eps}
+\end{picture}
+\begin{picture}(0,0)(12.5,5)
+\includegraphics[width=1cm]{100_arrow.eps}
+\end{picture}
+\begin{picture}(0,0)(95,0)
+\includegraphics[height=0.9cm]{001_arrow.eps}
+\end{picture}
+\end{center}
+\vspace{0.1cm}
+\end{minipage}
+}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Conclusion of defect / migration / combined defect simulations
+ }
+
+ \small
+
+\vspace*{0.1cm}
+
+Defect structures
+\begin{itemize}
+ \item Accurately described by quantum-mechanical simulations
+ \item Less correct description by classical potential simulations
+\end{itemize}
+\vspace*{0.2cm}
+\begin{itemize}
+ \item Consistent with solubility data of C in Si
+ \item \hkl<1 0 0> C-Si dumbbell interstitial ground state configuration
+ \item Consistent with reorientation and diffusion experiments
+ \item C migration pathway in Si identified
+\end{itemize}
+
+\vspace*{0.2cm}
+
+Concerning the precipitation mechanism
+\begin{itemize}
+ \item Agglomeration of C-Si dumbbells energetically favorable
+ \item C-Si indeed favored compared to
+ C$_{\text{sub}}$ \& \hkl<1 1 0> Si self-interstitial
+ \item Possible low interaction capture radius of
+ C$_{\text{sub}}$ \& \hkl<1 1 0> Si self-interstitial
+ \item In absence of nearby \hkl<1 1 0> Si self-interstitial:
+ C-Si \hkl<1 0 0> + Vacancy $\rightarrow$ C$_{\text{sub}}$ (SiC)
+\end{itemize}
+
+\vspace*{0.1cm}
+\begin{center}
+{\color{blue}Some results point to a different precipitation mechanism!}
+\end{center}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Silicon carbide precipitation simulations
+ }
+
+ \small
+
+{\scriptsize
+ \begin{pspicture}(0,0)(12,6.5)
+ % nodes
+ \rput(3.5,5.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{
+ \parbox{7cm}{
+ \begin{itemize}
+ \item Create c-Si volume
+ \item Periodc boundary conditions
+ \item Set requested $T$ and $p=0\text{ bar}$
+ \item Equilibration of $E_{\text{kin}}$ and $E_{\text{pot}}$
+ \end{itemize}
+ }}}}
+ \rput(3.5,2.7){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=lachs]{
+ \parbox{7cm}{
+ Insertion of C atoms at constant T
+ \begin{itemize}
+ \item total simulation volume {\pnode{in1}}
+ \item volume of minimal SiC precipitate {\pnode{in2}}
+ \item volume consisting of Si atoms to form a minimal {\pnode{in3}}\\
+ precipitate
+ \end{itemize}
+ }}}}
+ \rput(3.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{
+ \parbox{7.0cm}{
+ Run for 100 ps followed by cooling down to $20\, ^{\circ}\textrm{C}$
+ }}}}
+ \ncline[]{->}{init}{insert}
+ \ncline[]{->}{insert}{cool}
+ \psframe[fillstyle=solid,fillcolor=white](7.5,0.7)(13.5,6.3)
+ \rput(7.8,6){\footnotesize $V_1$}
+ \psframe[fillstyle=solid,fillcolor=lightgray](9,2)(12,5)
+ \rput(9.2,4.85){\tiny $V_2$}
+ \psframe[fillstyle=solid,fillcolor=gray](9.25,2.25)(11.75,4.75)
+ \rput(9.55,4.45){\footnotesize $V_3$}
+ \rput(7.9,3.2){\pnode{ins1}}
+ \rput(9.22,2.8){\pnode{ins2}}
+ \rput(11.0,2.4){\pnode{ins3}}
+ \ncline[]{->}{in1}{ins1}
+ \ncline[]{->}{in2}{ins2}
+ \ncline[]{->}{in3}{ins3}
+ \end{pspicture}
+}
+
+\begin{itemize}
+ \item Restricted to classical potential simulations
+ \item $V_2$ and $V_3$ considered due to low diffusion
+ \item Amount of C atoms: 6000
+ ($r_{\text{prec}}\approx 3.1\text{ nm}$, IBS: 2 ... 4 nm)
+ \item Simulation volume: $31\times 31\times 31$ unit cells
+ (238328 Si atoms)
+\end{itemize}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Silicon carbide precipitation simulations at $450\,^{\circ}\mathrm{C}$ as in IBS
+ }
+
+ \small
+
+\begin{minipage}{6.5cm}
+\includegraphics[width=6.4cm]{sic_prec_450_si-si_c-c.ps}
+\end{minipage}
+\begin{minipage}{6.5cm}
+\includegraphics[width=6.4cm]{sic_prec_450_energy.ps}
+\end{minipage}
+
+\begin{minipage}{6.5cm}
+\includegraphics[width=6.4cm]{sic_prec_450_si-c.ps}
+\end{minipage}
+\begin{minipage}{6.5cm}