+ \underline{Sd Rot usage (POSCAR):}
+\begin{verbatim}
+cubic diamond
+5.480
+ 3.0 0.0 0.0
+ 0.0 3.0 0.0
+ 0.0 0.0 3.0
+216 1
+Transformed selective dynamics
+45.0 0.0
+Direct
+ ...
+\end{verbatim}
+Only works in direct mode!\\
+$z,x'$-axis rotation: $45.0^{\circ}$, $0.0^{\circ}$
+ \end{minipage}
+ \begin{minipage}{6.2cm}
+ \includegraphics[width=6cm]{c_100_110sp-i_2333_vasp.ps}
+ \includegraphics[width=6cm]{c_100_110sp-i_2333_rc_vasp.ps}
+ \end{minipage}
+
+ {\color{blue}
+ Next: Migration calculation in 2333 using CRT
+ (\hkl<0 0 -1> $\rightarrow$ \hkl<0 0 1> and \hkl<0 -1 0>)
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ \hkl<0 0 -1> to \hkl <0 0 1> migration
+ in the $3\times 3\times 3$ Type 2 supercell
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ \hkl<0 0 -1> to \hkl <0 -1 0> migration
+ in the $3\times 3\times 3$ Type 2 supercell
+ }
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Defect configurations in $3\times 3\times 3$ Type 2 supercells revisited
+ }
+
+ \footnotesize
+
+ \begin{tabular}{l|p{2.5cm}|p{2.5cm}|p{4cm}|}
+ & \hkl<0 0 -1> interstitial
+ & local minimum\newline
+ \hkl<1 1 0> C-Si split
+ & intermediate configuration\newline
+ (bond centered conf)\\
+ \hline
+ default & $E_{\text{f}}=3.15407\text{ eV}$\newline
+ {\tiny
+ 434: 4.9027 - 2.00000\newline
+ 435: 5.2543 - 0.00000}
+ & $E_{\text{f}}=??\text{ eV}$\newline
+ {\tiny
+ ??\newline
+ ??}
+ & $E_{\text{f}}=4.40907\text{ eV}$\newline
+ {\tiny
+ 434: 5.0109 - 1.00264\newline
+ 435: 5.0111 - 0.99736}\\
+ \hline
+ No symmetry & $E_{\text{f}}=3.16107\text{ eV}$\newline
+ {\tiny
+ 434: 4.9032 - 2.00000\newline
+ 435: 5.2547 - 0.00000}
+ & $E_{\text{f}}=??\text{ eV}$\newline
+ {\tiny
+ ??\newline
+ ??}
+ & $E_{\text{f}}=4.41507\text{ eV}$\newline
+ {\tiny
+ 434: 5.0113 - 1.00140\newline
+ 435: 5.0114 - 0.99860} \\
+ \hline
+ $+$ spin polarized & $E_{\text{f}}=??\text{ eV}$\newline
+ {\tiny
+ {\color{blue}
+ ??\newline
+ ??\newline%
+ }%
+ {\color{green}%
+ ??\newline
+ ??}}
+ & $E_{\text{f}}={\color{red}??}\text{ eV}$\newline
+ {\tiny
+ {\color{blue}
+ ??\newline
+ ??\newline%
+ }%
+ {\color{green}%
+ ??\newline
+ ??}}
+ & $E_{\text{f}}=4.10307\text{ eV}$\newline
+ {\tiny
+ {\color{blue}
+ 435: 4.8118 - 1.00000\newline
+ 436: 5.5360 - 0.00000\newline%
+ }%
+ {\color{green}%
+ 433: 4.8151 - 1.00000\newline
+ 434: 5.3475 - 0.00000}} \\
+ \hline
+ \end{tabular}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Bond centered configuration revisited ($3\times 3\times 3$ Type 2)
+ }
+
+ \begin{minipage}{6cm}
+ Besetzungen hier rein ... Netto Spin 2 ...
+ \end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Combination of defects
+ }
+
+ TODO: introduce some Si self-interstitials and C interstitials before\\
+ BUT: Concentrate on 100 C interstitial combinations and 100 C + vacancy\\
+
+ Agglomeration of 100 defects energetically favorable?
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf\boldmath
+ Combination of defects
+ }
+
+ \begin{itemize}
+ \item Supercell: $3\times 3\times 3$ Type 2
+ \item Starting configuration: \hkl<0 0 -1> C-Si interstitial
+ \item Energies: $E_{\text{f}}$ of the interstitial combinations in eV
+ \end{itemize}
+
+ \underline{Along \hkl<1 1 0>:}
+
+ \begin{tabular}{|l|l|l|l|l|}
+ \hline
+ {\scriptsize
+ \backslashbox{2nd interstitial}{Distance $[\frac{a}{4}]$}
+ }
+ & \hkl<1 1 -1> & \hkl<2 2 0> & \hkl<3 3 -1> & \hkl<4 4 0>\\
+ \hline
+ \hkl<0 0 -1> & 6.23514 & 4.65014 & - & -\\
+ \hline
+ \hkl<0 0 1> & - & - & 6.53614 & - \\
+ \hline
+ \hkl<1 0 0>, \hkl<0 1 0> & & & &\\
+ \hline
+ \hkl<-1 0 0>, \hkl<0 -1 0> & & & &\\
+ \hline
+ \end{tabular}