+\label{chapter:basics}
+
+In the following the simulation methods used within the scope of this study are introduced.
+Enabling the investigation of the evolution of structure on the atomic scale, molecular dynamics simulations were chosen in order to model the behavior and precipitation of C introduced into an initially crystalline Si environment.
+To be able to model systems with a large amount of atoms computational efficient classical potentials to describe the interaction of the atoms are most often used in MD studies.
+For reasons of flexibility in executing this non-standard task and in order to be able to use a novel interaction potential \cite{albe_sic} an appropriate MD code called {\em posic ({\bf P}recipitation {\bf o}f {\bf SiC})}\footnote{The source code will be made available for download at http://www.physik.uni-augsburg.de/~zirkelfr/posic/posic.tar.bz2} including a library collecting respective MD subroutines was developed from scratch.
+The basic ideas of MD in general and the adopted techniques as implemented in {\em posic} in particular are outlined in section \ref{section:md}, while the functional form and derivative of the employed classical potential is presented in appendix \ref{app:d_tersoff}.
+An overview of the most important tools within the MD package is given in appendix \ref{app:code}.
+In addition to the classical potential approach ...
+Highly accurate technique DFT, VASP code, VASP mods, tools in appendix ...
+
+Determining the formation energies if defects is ...
+
+Migration pathways were investigated using the , which is explained in cloder detail in ...
+
+
+\section{Molecular dynamics simulations}
+\label{section:md}