+\begin{figure}[h]
+\begin{center}
+\begin{minipage}{6cm}
+\begin{center}
+\underline{Erhard/Albe}
+\includegraphics[width=5cm]{c_pd_albe/100_cmp.eps}
+\end{center}
+\end{minipage}
+\begin{minipage}{6cm}
+\begin{center}
+\underline{VASP}
+\includegraphics[width=5cm]{c_pd_vasp/100_cmp.eps}
+\end{center}
+\end{minipage}
+\end{center}
+\caption{Comparison of the visualized \hkl<1 0 0> dumbbel structures obtained by Erhard/Albe potential and VASP calculations.}
+\label{fig:defects:100db_vis_cmp}
+\end{figure}
+The silicon atom numbered '1' and the C atom compose the dumbbell structure.
+They share the lattice site which is indicated by the dashed red circle and which they are displaced from by length $a$ and $b$ respectively.
+The atoms no longer have four tetrahedral bonds to the silicon atoms located on the alternating opposite edges of the cube.
+Instead, each of the dumbbell atoms forms threefold coordinated bonds, which are located in a plane.
+One bond is formed to the other dumbbell atom.
+The other two bonds are bonds to the two silicon edge atoms located in the opposite direction of the dumbbell atom.
+The distance of the two dumbbell atoms is almost the same for both types of calculations.
+However, in the case of the VASP calculation, the dumbbell structure is pushed upwards compared to the Erhard/Albe results.
+Thus, the angles of bonds of the silicon dumbbell atom are clos to $120^{\circ}$ signifying the predominance of $sp^2$ hybridization.
+On the other hand, the carbon atom forms an almost colinear bond with the two silicon edge atoms implying the predominance of $p$ and $sp$ bonding.
+This is in figure \ref{fig:defects:100db_vis_cmp} as well as by the ...