During implantation, defects such as vacancies (V), substitutional C (C$_{\text{s}}$), interstitial C (C$_{\text{i}}$) and Si self-interstitials (Si$_{\text{i}}$) are created, which are believed to play a decisive role in the precipitation process.
In the following, these defects are systematically examined by computationally efficient, classical potential as well as highly accurate DFT calculations with the parameters and simulation conditions that are defined in chapter~\ref{chapter:simulation}.
Both methods are used to investigate selected diffusion processes of some of the defect configurations.
During implantation, defects such as vacancies (V), substitutional C (C$_{\text{s}}$), interstitial C (C$_{\text{i}}$) and Si self-interstitials (Si$_{\text{i}}$) are created, which are believed to play a decisive role in the precipitation process.
In the following, these defects are systematically examined by computationally efficient, classical potential as well as highly accurate DFT calculations with the parameters and simulation conditions that are defined in chapter~\ref{chapter:simulation}.
Both methods are used to investigate selected diffusion processes of some of the defect configurations.