+In chapter \ref{chapter:sic_rev} a review of the Si/C compound is given including the very central discussion on two controversial precipitation mechanisms present in literature in section \ref{section:assumed_prec}.
+Chapter \ref{chapter:basics} introduces some basics and internals of the utilized atomistic simulations as well as special methods of application.
+Details of the simulation and associated test calculations are presented in chapter \ref{chapter:simulation}.
+In chapter \ref{chapter:defects} results of investigations of single defect configurations, structures of comnbinations of two individual defects as well as some selected diffusion pathways in silicon are shown.
+These allow to draw conclusions with respect to the SiC precipitation mechanism in Si.
+More complex systems aiming to model the transformation of C incorporated in bulk Si into a SiC nucleus are examined in chapter \ref{chapter:md}.
+Finally a summary and some concluding remarks are given in chapter \ref{chapter:summary}.