Furthermore, these results indicate that increased temperatures are necessary to drive the system out of equilibrium enabling conditions needed for the formation of a metastable cubic polytype of SiC.
A maximum temperature to avoid melting is determined in section~\ref{section:md:tval} to be 120 \% of the Si melting point but due to defects lowering the transition point a maximum temperature of 95 \% of the Si melting temperature is considered useful.
This value is almost equal to the temperature of $2050\,^{\circ}\mathrm{C}$ already used in former simulations.
Furthermore, these results indicate that increased temperatures are necessary to drive the system out of equilibrium enabling conditions needed for the formation of a metastable cubic polytype of SiC.
A maximum temperature to avoid melting is determined in section~\ref{section:md:tval} to be 120 \% of the Si melting point but due to defects lowering the transition point a maximum temperature of 95 \% of the Si melting temperature is considered useful.
This value is almost equal to the temperature of $2050\,^{\circ}\mathrm{C}$ already used in former simulations.