+The C-C peak at about 0.31 nm perfectly matches the nearest neighbour distance of two carbon atoms in the 3C-SiC lattice.
+As can be seen from the inset this peak is also observed for the $V_1$ simulation.
+In 3C-SiC the same distance is also expected for nearest neighbour silicon atoms.
+The bottom of figure \ref{fig:md:pc_si-si_c-c} shows the radial distribution of Si-Si bonds together with a reference graph for pure c-Si.
+Indeed non-zero $g(r)$ values around 0.31 nm are observed while the amount of Si pairs at regular c-Si distances of 0.24 nm and 0.38 nm decreases.
+However, no clear peak is observed but the interval of enhanced $g(r)$ values corresponds to the width of the C-C $g(r)$ peak.
+In addition the abrupt increase of Si pairs at 0.29 nm can be attributed to the Si-Si cut-off radius of 0.296 nm as used in the present bond order potential.
+The cut-off function causes artificial forces pushing the Si atoms out of the cut-off region.
+Without the abrubt increase a maximum around 0.31 nm gets even more conceivable.
+For low concentrations of carbon, that is the $V_1$ simulation and early stages of the $V_2$ and $V_3$ simulations, analyses of configurations in which Si-Si distances around 0.3 nm appear and which are identifiable in regions of high disorder, which especially applies for the high concentration simulations, identify the \hkl<1 0 0> C-Si dumbbell to be responsible for stretching the Si-Si next neighbour distance.
+This excellently agrees with the calculated value $r(13)$ in table \ref{tab:defects:100db_cmp} for a resulting Si-Si distance in the \hkl<1 0 0> C-Si dumbbell configuration.
+
+\begin{figure}[!ht]
+\begin{center}
+ \includegraphics[width=12cm]{sic_prec_450_si-c.ps}
+\end{center}
+\caption{Radial distribution function of the Si-C distances for 6000 carbon atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of $450\,^{\circ}\mathrm{C}$ and cooled down to room temperature together with Si-C bonds resulting in a C-Si \hkl<1 0 0> dumbbell configuration.}
+\label{fig:md:pc_si-c}
+\end{figure}
+Figure \ref{fig:md:pc_si-c} displays the Si-C radial distribution function for all three insertion volumes together with the Si-C bonds as observed in a C-Si \hkl<1 0 0> dumbbell configuration.
+The first peak observed for all insertion volumes is at approximately 0.186 nm.
+This corresponds quite well to the expected next neighbour distance of 0.189 nm for Si and C atoms in 3C-SiC.
+By comparing the resulting Si-C bonds of a C-Si \hkl<1 0 0> dumbbell with the C-Si distances of the low concentration simulation it is evident that the resulting structure of the $V_1$ simulation is dominated by this type of defects.
+This is not surpsising, since the \hkl<1 0 0> dumbbell is found to be the ground state defect of a C interstitial in c-Si and for the low concentration simulations a carbon interstitial is expected in every fifth silicon unit cell only, thus, excluding defect superposition phenomena.
+The peak distance at 0.186 nm and the bump at 0.175 nm corresponds to the distance $r(3C)$ and $r(1C)$ as listed in table \ref{tab:defects:100db_cmp} and visualized in figure \ref{fig:defects:100db_cmp}.
+In addition it can be easily identified that the \hkl<1 0 0> dumbbell configuration contributes to the peaks at about 0.335 nm, 0.386 nm, 0.434 nm, 0.469 nm and 0.546 nm observed in the $V_1$ simulation.
+Not only the peak locations but also the peak widths and heights become comprehensible.
+The distinct peak at 0.26 nm, which exactly matches the cut-off radius of the Si-C interaction, is again a potential artifact.
+
+For high carbon concentrations, that is the $V_2$ and $V_3$ simulation, the defect concentration is likewiese increased and a considerable amount of damage is introduced in the insertion volume.
+The consequential superposition of these defects and the high amounts of damage generate new displacement arrangements for the C-C as well as for the Si-C pair distances, which become hard to categorize and trace and obviously lead to a broader distribution.
+Short range order indeed is observed but only hardly visible is the long range order.
+This indicates the formation of an amorphous SiC-like phase.
+In fact the resulting Si-C and C-C radial distribution functions compare quite well with these obtained by cascade amorphized and melt-quenched amorphous SiC using a modified Tersoff potential \cite{gao02}.
+
+The question of the formation of such an amoprhous phase, although experiments show crystalline 3C-SiC precipitates at prevailing temperatures remains.
+The answer is found in the short range and abrupt cut-off of the employed bond order potential.
+The abrupt cut-off, which ... to zero betwenn the first and second next neighbour distance, is responsible for overestimated and unphysical high forces of next neighboured atoms.
+Indeed it is not only the C-C bonds which seem to be unbreakable.
+Also the C-Si pairs, as observed in the low concentration simulations, are stuck.
+This can be seen from the almost horizontal progress of the total energy graph in the continuation step, even for the low concentartion simulation.
+Longer time scales might on the one hand be not sufficient enough and on the other hand not .
+Alternatively higher temperatures to speed up or actually make possible the precipitation simulation are needed.
+
+{\color{red}Todo: Read again about the accelerated dynamics methods and maybe explain a bit more here.}
+
+Finally explain which methods will be applied in the following.