+Figure \ref{fig:md:prec_fc} displays a flow chart of the applied steps involved in the simulation sequence.
+\begin{figure}[!ht]
+\begin{center}
+\begin{pspicture}(0,0)(15,17)
+
+ \psframe*[linecolor=hb](3,11.5)(11,17)
+ \rput[lt](3.2,16.8){\color{gray}INITIALIZIATION}
+ \rput(7,16){\rnode{14}{\psframebox{Create $31\times 31\times 31$
+ unit cells of c-Si}}}
+ \rput(7,15){\rnode{13}{\psframebox{$T_{\text{s}}=450\,^{\circ}\mathrm{C}$,
+ $p_{\text{s}}=0\text{ bar}$}}}
+ \rput(7,14){\rnode{12}{\psframebox{Thermal initialization}}}
+ \rput(7,13){\rnode{11}{\psframebox{Continue for 100 fs}}}
+ \rput(7,12){\rnode{10}{\psframebox{$T_{\text{avg}}=T_{\text{s}}
+ \pm1\,^{\circ}\mathrm{C}$}}}
+ \ncline[]{->}{14}{13}
+ \ncline[]{->}{13}{12}
+ \ncline[]{->}{12}{11}
+ \ncline[]{->}{11}{10}
+ \ncbar[angle=0]{->}{10}{11}
+ \psset{fillcolor=hb}
+ \nbput*{\scriptsize false}
+
+ \psframe*[linecolor=lbb](3,6.5)(11,11)
+ \rput[lt](3.2,10.8){\color{gray}CARBON INSERTION}
+ \rput(3,10.8){\pnode{CI}}
+ \rput(7,10){\rnode{9}{\psframebox{Insertion of 10 carbon aoms}}}
+ \rput(7,9){\rnode{8}{\psframebox{Continue for 100 fs}}}
+ \rput(7,8){\rnode{7}{\psframebox{$T_{\text{avg}}=T_{\text{s}}
+ \pm1\,^{\circ}\mathrm{C}$}}}
+ \rput(7,7){\rnode{6}{\psframebox{$N_{\text{Carbon}}=6000$}}}
+ \ncline[]{->}{9}{8}
+ \ncline[]{->}{8}{7}
+ \ncline[]{->}{7}{6}
+ \trput*{\scriptsize true}
+ \ncbar[angle=180]{->}{7}{8}
+ \psset{fillcolor=lbb}
+ \naput*{\scriptsize false}
+ \ncbar[angle=0]{->}{6}{9}
+ \nbput*{\scriptsize false}
+ \ncbar[angle=180]{->}{10}{CI}
+ \psset{fillcolor=white}
+ \nbput*{\scriptsize true}
+
+ \rput(7,5.75){\rnode{5}{\psframebox{Continue for 100 ps}}}
+ \ncline[]{->}{6}{5}
+ \trput*{\scriptsize true}
+
+ \psframe*[linecolor=lachs](3,0.5)(11,5)
+ \rput[lt](3.2,4.8){\color{gray}COOLING DOWN}
+ \rput(3,4.8){\pnode{CD}}
+ \rput(7,4){\rnode{4}{\psframebox{$T_{\text{s}}=T_{\text{s}}-
+ 1\,^{\circ}\mathrm{C}$}}}
+ \rput(7,3){\rnode{3}{\psframebox{Continue for 100 fs}}}
+ \rput(7,2){\rnode{2}{\psframebox{$T_{\text{avg}}=T_{\text{s}}
+ \pm1\,^{\circ}\mathrm{C}$}}}
+ \rput(7,1){\rnode{1}{\psframebox{$T_{\text{s}}=20\,^{\circ}\mathrm{C}$}}}
+ \ncline[]{->}{4}{3}
+ \ncline[]{->}{3}{2}
+ \ncline[]{->}{2}{1}
+ \trput*{\scriptsize true}
+ \ncbar[angle=0]{->}{2}{3}
+ \psset{fillcolor=lachs}
+ \nbput*{\scriptsize false}
+ \ncbar[angle=180,arm=1.5]{->}{1}{4}
+ \naput*{\scriptsize false}
+ \ncbar[angle=180]{->}{5}{CD}
+ \trput*{\scriptsize false}
+
+ \rput(7,-0.25){\rnode{0}{\psframebox{End of simulation}}}
+ \ncline[]{->}{1}{0}
+ \trput*{\scriptsize true}
+\end{pspicture}
+\end{center}
+\caption[Flowchart of the simulation sequence used in molecular dnymaics simulations aiming to reproduce the precipitation process.]{Flowchart of the simulation sequence used in molecular dnymaics simulations aiming to reproduce the precipitation process. $T_{\text{s}}$ and $p_{\text{s}}$ are the preset values for the system temperature and pressure. $T_{\text{avg}}$ is the averaged actual system temperature.}
+\label{fig:md:prec_fc}
+\end{figure}
+
+The radial distribution function $g(r)$ for Si-C and C-C distances is shown in figure \ref{fig:md:pc_si-si_c-c}.
+\begin{figure}[!ht]
+\begin{center}
+ \includegraphics[width=12cm]{pc_si-c_c-c_thesis.ps}
+\end{center}
+\caption{Radial distribution function of the Si-C and C-C distances for 6000 carbon atoms inserted into the three different volumes $V_1$, $V_2$ and $V_3$ at a temperature of $450\,^{\circ}\mathrm{C}$.}
+\label{fig:md:pc_si-si_c-c}
+\end{figure}
+It is easily and instantly visible that there is no significant difference among the two simulations of high carbon concentration in the $V_2$ and $V_3$ volumes.
+
+The first C-C peak appears at about 0.15 nm, which is compareable to the nearest neighbour distance of graphite or diamond.
+The number of C-C bonds is much smaller for $V_1$ than for $V_2$ and $V_3$ since carbon atoms are spread over the total simulation volume.
+These carbon atoms are assumed to form strong bonds.
+This is supported by figure \ref{fig:md:energy_450} displaying the total energy of all three simulations during the whole simulation sequence.
+{\color{red}Todo: Add figure and check continue for 100 fs!}
+A huge decrease of the total energy during carbon insertion is observed for the simulations with high carbon concentration in contrast to the $V_1$ simulation, which shows a slight increase.
+Here is the problem.
+Hard to break this bonds again, which is necessary for the 3C-SiC conversion.
+
+The C-C peak at about 0.31 nm perfectly matches the nearest neighbour distance of two carbon atoms in the 3C-SiC lattice.
+In 3C-SiC the same distance is also expected for nearest neighbour silicon atoms.
+Figure \ref{fig:md:si-si_450} shows the radial distribution of Si-Si bonds together with a reference graph for pure c-Si.
+Indeed non-zero $g(r)$ values around 0.31 nm are observed while the amount of Si pairs at regular c-Si distances of 0.24 nm and 0.38 nm decreases.
+However, no clear peak is observed but the interval of enhanced $g(r)$ values corresponds to the width of the C-C $g(r)$ peak.
+For low concentrations of carbon, that is the $V_1$ simulation and early stages of the $V_2$ and $V_3$ simulations, analyses of configurations in which Si-Si distances around 0.3 nm appear and which are identifiable despite a high amount of disorder, which is especially observed in high concentration simulations, identify the \hkl<1 0 0> C-Si dumbbell to be responsible for stretching the Si-Si next neighbour distance.
+This excellently agrees with the calculated value $r(13)$ in table \ref{tab:defects:100db_cmp} for a resulting Si-Si distance in the \hkl<1 0 0> C-Si dumbbell configuration.