-A reduction of the SF in addition to the APB defects was recently achieved growing 3C-SiC on undulant Si~\cite{nagasawa06}.
-Therefore, a Si\hkl(0 0 1) substrate is covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions.
-This eliminates APB defects via a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes, which are, thus, self-vanishing.
+A reduction of the SF in addition to the APB defects was recently achieved by growing 3C-SiC on undulant Si~\cite{nagasawa06}, i.e.\ a Si \hkl(0 0 1) substrate covered with continuous slopes oriented in the \hkl[1 1 0] and \hkl[-1 -1 0] directions.
+In this way, APB defects are eliminated by a mechanism similar to that in the off-axis growth process while, at the same time, SFs are aligned in the \hkl(1 1 1) or \hkl(-1 -1 1) planes and, thus, terminate as they connect with each other during the growth process.