+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+This growth mechanism does not require two-dimensional nucleation.
+Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
+In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
+However, lateral 3C-SiC growth was also observed on low tilt angle off-axis substrates originating from intentionally induced dislocations \cite{powell91}.
+Additionally, 6H-SiC was observed on clean substrates even for a tilt angle as low as \unit[0.1]{$^{\circ}$} due to low surface mobilities that facilitate arriving molecules to reach surface steps.
+Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining molecules interacting with surface disturbances by a yet unknown mechanism, in contrast to a model \cite{ueda90}, in which the competing 6H versus 3C growth depends on the density of surface steps.
+
+MBE ... advantages ... and so on ...