-Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the change in the surface superstructure, which gives atomic level control in the growth process \cite{fuyuki89}.
-in more detail ... \cite{yoshinobu90}.
-3C on 3C homoepitaxy by ALE \cite{fuyuki89,fuyuki93,hara93}
-6H on 6H ... \cite{tanaka94}
+Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the periodical change in the surface superstructure by the alternating supply of the source gases, which determines the growth rate giving atomic level control in the growth process \cite{fuyuki89}.
+The cleaned substrate surface shows a C terminated $(2\times 2)$ pattern at \unit[1000]{$^{\circ}$C}, which turns into a $(3\times 2)$ pattern when Si$_2$H$_6$ is introduced and it is maintained after the supply is stopped.
+A more detailed investigation showed the formation of a preceeding $(2\times 1)$ and $(5\times 2)$ pattern within the exposure to the Si containing gas \cite{yoshinobu90,fuyuki93}.
+The $(3\times 2)$ superstructure contains approximately 1.7 monolayers of Si atoms, crystallizing into 3C-SiC with a smooth and mirror-like surface after C$_2$H$_6$ is inserted accompanied by a reconstruction of the surface into the initial C terminated $(2\times 2)$ pattern.
+A minimal growth rate of 2.3 monolayers per cycle exceeding the value of 1.7 is due to physically adsorbed Si atoms not contributing to the superstructure.
+To realize single monolayer growth precise control of the gas supply to form the $(2\times 1)$ structure is required.
+However, accurate layer-by-layer growth is achieved under certain conditions, which facilitate the spontaneous desorption of an additional layer of one atom species by supply of the other species \cite{hara93}.
+Homoepitaxial growth of the 6H polytype has been realized on off-oriented substrates utilizing simultaneous supply of the source gases \cite{tanaka94}.
+Depending on the gas flow ratio either 3C island formation or step flow growth of the 6H polytype occurs, which is explained by a model including aspects of enhanced surface mobilities of adatoms on a $(3\times 3)$ reconstructed surface.
+