The high breakdown field of SiC compared to Si allows the blocking voltage region of a device to be designed roughly 10 times thinner and 10 times heavier doped, resulting in a decrease of the blocking region resistance by a factor of 100 and a much faster switching behavior.
Thus, rectifier diodes and switching transistors with higher switching frequencies and much greater efficiencies can be realized and exploited in highly efficient power converters.
Therefor, SiC constitutes a promising candidate to become the key technology towards an extensive development and use of regenerative energies and elctromobility.
The high breakdown field of SiC compared to Si allows the blocking voltage region of a device to be designed roughly 10 times thinner and 10 times heavier doped, resulting in a decrease of the blocking region resistance by a factor of 100 and a much faster switching behavior.
Thus, rectifier diodes and switching transistors with higher switching frequencies and much greater efficiencies can be realized and exploited in highly efficient power converters.
Therefor, SiC constitutes a promising candidate to become the key technology towards an extensive development and use of regenerative energies and elctromobility.