-However, even for GaN based diodes SiC turns out to be of great importance since it constitutes an ideal substrate material for GaN epitaxial layer growth~\ref{liu02}.
-In doing so, the 3C polytype promises good quality, single crystalline GaN films~\ref{takeuchi91,yamamoto04,ito04}.
+However, even for GaN based diodes SiC turns out to be of great importance since it constitutes an ideal substrate material for GaN epitaxial layer growth~\cite{liu_l02}.
+As such, SiC will continue to play a major role in the production of future super-bright visible emitters.
+Especially substrates of the 3C polytype promise good quality, single crystalline GaN films~\cite{takeuchi91,yamamoto04,ito04}.
+
+The focus of SiC based applications, however, is in the area of solid state electronics experiencing revolutionary performance improvements enabled by its capabilities.
+These devices include ultraviolet (UV) detectors, radio frequency (RF) amplifiers, rectifiers, switching transistors and MEMS applications.
+For UV dtectors the wide band gap is useful for realizing low photodiode dark currents as well as sensors that are blind to undesired near-infrared wavelenghts produced by heat and solar radiation.
+These photodiodes serve as excellent sensors applicable for monitoring and control of turbine engine combustion.
+The low dark currents enable the use for X-ray, heavy ion and neutron detection in nuclear reactor monitoring and enhanced scientific studies of high-energy particle collisions as well as cosmic radiation.
+The high breakdown field and carrier saturation velocity coupled with the high thermal conductivity allow SiC RF transistors to handle much higher power densities and frequencies in stable operation at high temperatures.
+Smaller transistor sizes and less cooling requirements lead to a reduced overall size and cost of these systems.