However, the exact atomic rearrangement involved within this topotactic transformation is not identified.
Furthermore, IBS studies of Reeson~et~al.~\cite{reeson87}, in which implantation temperatures of \unit[500]{$^{\circ}$C} were employed, revealed the necessity of extreme annealing temperatures for C redistribution, which is assumed to result from the stability of substitutional C and consequently high activation energies required for precipitate dissolution.
The results support a mechanism of an initial coherent precipitation based on substitutional C that is likewise valid for the IBS of 3C-SiC by C implantation into Si at elevated temperatures.
However, the exact atomic rearrangement involved within this topotactic transformation is not identified.
Furthermore, IBS studies of Reeson~et~al.~\cite{reeson87}, in which implantation temperatures of \unit[500]{$^{\circ}$C} were employed, revealed the necessity of extreme annealing temperatures for C redistribution, which is assumed to result from the stability of substitutional C and consequently high activation energies required for precipitate dissolution.
The results support a mechanism of an initial coherent precipitation based on substitutional C that is likewise valid for the IBS of 3C-SiC by C implantation into Si at elevated temperatures.