author = "G. R. Fisher and P. Barnes",
title = "Towards a unified view of polytypism in silicon
carbide",
- journal = "Philosophical Magazine Part B",
+ journal = "Philos. Mag. B",
volume = "61",
pages = "217--236",
year = "1990",
}
@Article{koegler03,
- author = "R. Kögler and F. Eichhorn and J. R. Kaschny and A.
- Mücklich and H. Reuther and W. Skorupa and C. Serre and
- A. Perez-Rodriguez",
+ author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
+ A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
+ Serre and A. Perez-Rodriguez",
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
- journal = "Applied Physics A: Materials Science \& Processing",
+ journal = "Appl. Phys. A: Mater. Sci. Process.",
volume = "76",
pages = "827--835",
month = mar,
year = "2003",
- notes = "dual implantation, sic prec enhanced by vacancies",
+ notes = "dual implantation, sic prec enhanced by vacancies,
+ precipitation by interstitial and substitutional
+ carbon, both mechanisms explained + refs",
}
@Book{laplace,
title = "Molecular dynamics with coupling to an external bath",
publisher = "AIP",
year = "1984",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "81",
number = "8",
pages = "3684--3690",
title = "Molecular dynamics determination of defect energetics
in beta -Si{C} using three representative empirical
potentials",
- journal = "Modelling and Simulation in Materials Science and
- Engineering",
+ journal = "Modell. Simul. Mater. Sci. Eng.",
volume = "3",
number = "5",
pages = "615--627",
dumbbell configuration",
}
-@Article{gao02,
+@Article{gao02a,
title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
Defect accumulation, topological features, and
disordering",
@Article{devanathan98,
title = "Computer simulation of a 10 ke{V} Si displacement
cascade in Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "141",
number = "1-4",
pages = "118--122",
@Article{devanathan98_2,
title = "Displacement threshold energies in [beta]-Si{C}",
- journal = "Journal of Nuclear Materials",
+ journal = "J. Nucl. Mater.",
volume = "253",
number = "1-3",
pages = "47--52",
notes = "si self interstitial, diffusion, tbmd",
}
+@Article{johnson98,
+ author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
+ Rubia",
+ collaboration = "",
+ title = "A kinetic Monte--Carlo study of the effective
+ diffusivity of the silicon self-interstitial in the
+ presence of carbon and boron",
+ publisher = "AIP",
+ year = "1998",
+ journal = "J. Appl. Phys.",
+ volume = "84",
+ number = "4",
+ pages = "1963--1967",
+ keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
+ CARBON ADDITIONS; BORON ADDITIONS; elemental
+ semiconductors; self-diffusion",
+ URL = "http://link.aip.org/link/?JAP/84/1963/1",
+ doi = "10.1063/1.368328",
+ notes = "kinetic monte carlo of si self interstitial
+ diffsuion",
+}
+
@Article{bar-yam84,
title = "Barrier to Migration of the Silicon
Self-Interstitial",
notes = "si self-interstitial migration barrier",
}
+@Article{bar-yam84_2,
+ title = "Electronic structure and total-energy migration
+ barriers of silicon self-interstitials",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "30",
+ number = "4",
+ pages = "1844--1852",
+ numpages = "8",
+ year = "1984",
+ month = aug,
+ doi = "10.1103/PhysRevB.30.1844",
+ publisher = "American Physical Society",
+}
+
+@Article{bloechl93,
+ title = "First-principles calculations of self-diffusion
+ constants in silicon",
+ author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+ and D. B. Laks and W. Andreoni and S. T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "70",
+ number = "16",
+ pages = "2435--2438",
+ numpages = "3",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevLett.70.2435",
+ publisher = "American Physical Society",
+ notes = "si self int diffusion by ab initio md, formation
+ entropy calculations",
+}
+
@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
silicon, si self interstitials, free energy",
}
+@Article{goedecker02,
+ title = "A Fourfold Coordinated Point Defect in Silicon",
+ author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+ journal = "Phys. Rev. Lett.",
+ volume = "88",
+ number = "23",
+ pages = "235501",
+ numpages = "4",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevLett.88.235501",
+ publisher = "American Physical Society",
+ notes = "first time ffcd, fourfold coordinated point defect in
+ silicon",
+}
+
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
+@Article{hobler05,
+ title = "Ab initio calculations of the interaction between
+ native point defects in silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "124-125",
+ number = "",
+ pages = "368--371",
+ year = "2005",
+ note = "EMRS 2005, Symposium D - Materials Science and Device
+ Issues for Future Technologies",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2005.08.072",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+ author = "G. Hobler and G. Kresse",
+ notes = "vasp intrinsic si defect interaction study, capture
+ radius",
+}
+
@Article{ma10,
title = "Ab initio study of self-diffusion in silicon over a
wide temperature range: Point defect states and
notes = "si self interstitial diffusion + refs",
}
+@Article{posselt06,
+ title = "Atomistic simulations on the thermal stability of the
+ antisite pair in 3{C}- and 4{H}-Si{C}",
+ author = "M. Posselt and F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "73",
+ number = "12",
+ pages = "125206",
+ numpages = "8",
+ year = "2006",
+ month = mar,
+ doi = "10.1103/PhysRevB.73.125206",
+ publisher = "American Physical Society",
+}
+
@Article{posselt08,
title = "Correlation between self-diffusion in Si and the
migration mechanisms of vacancies and
notes = "defects in 3c-sic",
}
+@Article{gao02,
+ title = "Empirical potential approach for defect properties in
+ 3{C}-Si{C}",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "191",
+ number = "1-4",
+ pages = "487--496",
+ year = "2002",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(02)00600-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
+ author = "Fei Gao and William J. Weber",
+ keywords = "Empirical potential",
+ keywords = "Defect properties",
+ keywords = "Silicon carbide",
+ keywords = "Computer simulation",
+ notes = "sic potential, brenner type, like erhart/albe",
+}
+
+@Article{gao04,
+ title = "Atomistic study of intrinsic defect migration in
+ 3{C}-Si{C}",
+ author = "Fei Gao and William J. Weber and M. Posselt and V.
+ Belko",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "24",
+ pages = "245205",
+ numpages = "5",
+ year = "2004",
+ month = jun,
+ doi = "10.1103/PhysRevB.69.245205",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{gao07,
+ author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
+ W. J. Weber",
+ collaboration = "",
+ title = "Ab Initio atomic simulations of antisite pair recovery
+ in cubic silicon carbide",
+ publisher = "AIP",
+ year = "2007",
+ journal = "Appl. Phys. Lett.",
+ volume = "90",
+ number = "22",
+ eid = "221915",
+ numpages = "3",
+ pages = "221915",
+ keywords = "ab initio calculations; silicon compounds; antisite
+ defects; wide band gap semiconductors; molecular
+ dynamics method; density functional theory;
+ electron-hole recombination; photoluminescence;
+ impurities; diffusion",
+ URL = "http://link.aip.org/link/?APL/90/221915/1",
+ doi = "10.1063/1.2743751",
+}
+
@Article{mattoni2002,
title = "Self-interstitial trapping by carbon complexes in
crystalline silicon",
@Article{capaz94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
dumbbell",
}
+@Article{capaz98,
+ title = "Theory of carbon-carbon pairs in silicon",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "15",
+ pages = "9845--9850",
+ numpages = "5",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevB.58.9845",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+ author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+ Shifeng Lu and Xiang-Yang Liu",
+ collaboration = "",
+ title = "Ab initio modeling and experimental study of {C}--{B}
+ interactions in Si",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Appl. Phys. Lett.",
+ volume = "80",
+ number = "1",
+ pages = "52--54",
+ keywords = "silicon; boron; carbon; elemental semiconductors;
+ impurity-defect interactions; ab initio calculations;
+ secondary ion mass spectra; diffusion; interstitials",
+ URL = "http://link.aip.org/link/?APL/80/52/1",
+ doi = "10.1063/1.1430505",
+ notes = "c-c 100 split, lower as a and b states of capaz",
+}
+
@Article{dal_pino93,
title = "Ab initio investigation of carbon-related defects in
silicon",
- author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
Joannopoulos",
journal = "Phys. Rev. B",
volume = "47",
@Article{song90,
title = "{EPR} identification of the single-acceptor state of
interstitial carbon in silicon",
- author = "G. D. Watkins L. W. Song",
+ author = "L. W. Song and G. D. Watkins",
journal = "Phys. Rev. B",
volume = "42",
number = "9",
author = "A K Tipping and R C Newman",
title = "The diffusion coefficient of interstitial carbon in
silicon",
- journal = "Semiconductor Science and Technology",
+ journal = "Semicond. Sci. Technol.",
volume = "2",
number = "5",
pages = "315--317",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- journal = "Materials Science and Engineering B",
+ journal = "Mater. Sci. Eng., B",
volume = "89",
number = "1-3",
pages = "241--245",
ISSN = "0921-5107",
doi = "DOI: 10.1016/S0921-5107(01)00794-2",
URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
- author = "P. Lavéant and G. Gerth and P. Werner and U. Gösele",
+ author = "P. Lav\'eant and G. Gerth and P. Werner and U.
+ G{\"{o}}sele",
notes = "low c in si, tensile stress to compensate compressive
stress, avoid sic precipitation",
}
silicon by transmission electron microscopy",
publisher = "AIP",
year = "1997",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "70",
number = "2",
pages = "252--254",
}
@InProceedings{werner96,
- author = "P. Werner and R. Koegler and W. Skorupa and D.
+ author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
Eichler",
booktitle = "Ion Implantation Technology. Proceedings of the 11th
International Conference on",
volume = "",
number = "",
pages = "675--678",
- keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
- atom/radiation induced defect interaction;C depth
- distribution;C precipitation;C-Si defects;C-Si
- dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
- energy ion implantation;ion implantation;metastable
- agglomerates;microdefects;positron annihilation
- spectroscopy;rapid thermal annealing;secondary ion mass
- spectrometry;vacancy clusters;buried
- layers;carbon;elemental semiconductors;impurity-defect
- interactions;ion implantation;positron
- annihilation;precipitation;rapid thermal
- annealing;secondary ion mass
- spectra;silicon;transmission electron
- microscopy;vacancies (crystal);",
doi = "10.1109/IIT.1996.586497",
ISSN = "",
notes = "c-si agglomerates dumbbells",
}
+@Article{werner98,
+ author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+ D. C. Jacobson",
+ collaboration = "",
+ title = "Carbon diffusion in silicon",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Appl. Phys. Lett.",
+ volume = "73",
+ number = "17",
+ pages = "2465--2467",
+ keywords = "silicon; carbon; elemental semiconductors; diffusion;
+ secondary ion mass spectra; semiconductor epitaxial
+ layers; annealing; impurity-defect interactions;
+ impurity distribution",
+ URL = "http://link.aip.org/link/?APL/73/2465/1",
+ doi = "10.1063/1.122483",
+ notes = "c diffusion in si, kick out mechnism",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
y]{C}[sub y]/Si heterostructures",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "6",
pages = "3656--3668",
keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
URL = "http://link.aip.org/link/?JAP/76/3656/1",
doi = "10.1063/1.357429",
- notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs,
+ precipitation by substitutional carbon, coherent prec,
+ coherent to incoherent transition strain vs interface
+ energy",
+}
+
+@Article{fischer95,
+ author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
+ Osten",
+ collaboration = "",
+ title = "Investigation of the high temperature behavior of
+ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
+ publisher = "AIP",
+ year = "1995",
+ journal = "J. Appl. Phys.",
+ volume = "77",
+ number = "5",
+ pages = "1934--1937",
+ keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
+ XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
+ PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
+ TEMPERATURE RANGE 04001000 K",
+ URL = "http://link.aip.org/link/?JAP/77/1934/1",
+ doi = "10.1063/1.358826",
}
@Article{edgar92,
NETHERLANDS",
}
+@Article{zirkelbach09,
+ title = "Molecular dynamics simulation of defect formation and
+ precipitation in heavily carbon doped silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "159-160",
+ number = "",
+ pages = "149--152",
+ year = "2009",
+ note = "EMRS 2008 Spring Conference Symposium K: Advanced
+ Silicon Materials Research for Electronic and
+ Photovoltaic Applications",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2008.10.010",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+ author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+ B. Stritzker",
+ keywords = "Silicon",
+ keywords = "Carbon",
+ keywords = "Silicon carbide",
+ keywords = "Nucleation",
+ keywords = "Defect formation",
+ keywords = "Molecular dynamics simulations",
+}
+
+@Article{zirkelbach10a,
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
+ pages = "094110",
+ numpages = "6",
+ year = "2010",
+ month = sep,
+ doi = "10.1103/PhysRevB.82.094110",
+ publisher = "American Physical Society",
+}
+
+@Article{zirkelbach10b,
+ title = "First principles study of defects in carbon implanted
+ silicon",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
+@Article{zirkelbach10c,
+ title = "...",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
layers in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "147",
number = "1-4",
pages = "249--255",
@Article{lindner99_2,
title = "Mechanisms in the ion beam synthesis of Si{C} layers
in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "148",
number = "1-4",
pages = "528--533",
@Article{lindner01,
title = "Ion beam synthesis of buried Si{C} layers in silicon:
Basic physical processes",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "178",
number = "1-4",
pages = "44--54",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(01)00504-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
- author = "Jörg K. N. Lindner",
+ author = "J{\"{o}}rg K. N. Lindner",
}
@Article{lindner02,
notes = "ibs, burried sic layers",
}
+@Article{lindner06,
+ title = "On the balance between ion beam induced nanoparticle
+ formation and displacive precipitate resolution in the
+ {C}-Si system",
+ journal = "Mater. Sci. Eng., C",
+ volume = "26",
+ number = "5-7",
+ pages = "857--861",
+ year = "2006",
+ note = "Current Trends in Nanoscience - from Materials to
+ Applications",
+ ISSN = "0928-4931",
+ doi = "DOI: 10.1016/j.msec.2005.09.099",
+ URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
+ notes = "c int diffusion barrier",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
title = "Phase Transition for a Hard Sphere System",
publisher = "AIP",
year = "1957",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "27",
number = "5",
pages = "1208--1209",
title = "Studies in Molecular Dynamics. {I}. General Method",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "31",
number = "2",
pages = "459--466",
@Article{wesch96,
title = "Silicon carbide: synthesis and processing",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "116",
number = "1-4",
pages = "305--321",
ZnSe-based semiconductor device technologies",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "3",
pages = "1363--1398",
FILMS; INDUSTRY",
URL = "http://link.aip.org/link/?JAP/76/1363/1",
doi = "10.1063/1.358463",
+ notes = "sic intro, properties",
+}
+
+@Article{neudeck95,
+ author = "P. G. Neudeck",
+ title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
+ {ELECTRONICS} {TECHNOLOGY}",
+ journal = "Journal of Electronic Materials",
+ year = "1995",
+ volume = "24",
+ number = "4",
+ pages = "283--288",
+ month = apr,
}
@Article{foo,
doi = "DOI: 10.1016/0038-1101(96)00045-7",
URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
author = "J. B. Casady and R. W. Johnson",
+ notes = "sic intro",
}
@Article{giancarli98,
@Article{tairov78,
title = "Investigation of growth processes of ingots of silicon
carbide single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "43",
number = "2",
pages = "209--212",
year = "1978",
- notes = "modifief lely process",
+ notes = "modified lely process",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(78)90169-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
cubic Si{C} for semiconductor devices",
publisher = "AIP",
year = "1983",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "42",
number = "5",
pages = "460--462",
Si{C} on silicon",
publisher = "AIP",
year = "1987",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "61",
number = "10",
pages = "4889--4893",
epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "73",
number = "2",
pages = "726--732",
6{H}-Si{C} substrates",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
number = "14",
pages = "1353--1355",
silacyclobutane",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "2",
pages = "1271--1273",
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "154",
number = "1-2",
pages = "72--80",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(95)00170-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
- author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
- and W. Richter",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B.
+ Schr{\"{o}}ter and W. Richter",
notes = "solid source mbe of 3c-sic on si and 6h-sic",
}
6{H}--Si{C} by solid-source molecular beam epitaxy",
publisher = "AIP",
year = "1995",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "66",
number = "23",
pages = "3182--3184",
{IMPLANTATION}",
publisher = "AIP",
year = "1971",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "18",
number = "11",
pages = "509--511",
beam synthesis and incoherent lamp annealing",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "26",
pages = "2242--2244",
title = "Solubility of Carbon in Silicon and Germanium",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "30",
number = "6",
pages = "1551--1555",
URL = "http://link.aip.org/link/?JCP/30/1551/1",
doi = "10.1063/1.1730236",
- notes = "solubility of c in c-si",
+ notes = "solubility of c in c-si, si-c phase diagram",
}
@Article{cowern96,
{B} in silicon",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "8",
pages = "1150--1152",
@Article{stolk95,
title = "Implantation and transient boron diffusion: the role
of the silicon self-interstitial",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "96",
number = "1-2",
pages = "187--195",
diffusion in ion-implanted silicon",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "81",
number = "9",
pages = "6031--6050",
of Si[sub 1 - y]{C}[sub y] random alloy layers",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "64",
number = "3",
pages = "324--326",
- x - y]Ge[sub x]{C}[sub y]",
publisher = "AIP",
year = "1991",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "70",
number = "4",
pages = "2470--2472",
molecular beam epitaxy",
publisher = "AIP",
year = "1999",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "74",
number = "6",
pages = "836--838",
month = may,
doi = "10.1103/PhysRevLett.72.3578",
publisher = "American Physical Society",
- notes = "high c concentration in si, heterostructure, starined
+ notes = "high c concentration in si, heterostructure, strained
si, dft",
}
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
author = "Shu-Tong Chang and Chung-Yi Lin",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "44",
number = "4B",
pages = "2257--2262",
Si(001)",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "82",
number = "10",
pages = "4977--4981",
potential energy surfaces",
publisher = "AIP",
year = "2009",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "130",
number = "11",
eid = "114711",
molecular dynamics method",
publisher = "AIP",
year = "1981",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "52",
number = "12",
pages = "7182--7190",
@Article{justo98,
title = "Interatomic potential for silicon defects and
disordered phases",
- author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
- Kaxiras and V. V. Bulatov and Sidney Yip",
+ author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
+ Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
journal = "Phys. Rev. B",
volume = "58",
number = "5",
simulation of infrequent events",
publisher = "AIP",
year = "1997",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "106",
number = "11",
pages = "4665--4677",
infrequent events",
publisher = "AIP",
year = "2000",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "112",
number = "21",
pages = "9599--9606",
simulation",
publisher = "AIP",
year = "1999",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "110",
number = "19",
pages = "9401--9410",
to the production of amorphous silicon",
publisher = "AIP",
year = "2005",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "122",
number = "15",
eid = "154509",
difficult?",
publisher = "AIP",
year = "1993",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "62",
number = "25",
pages = "3336--3338",
@Article{chaussende08,
title = "Prospects for 3{C}-Si{C} bulk crystal growth",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "310",
number = "5",
pages = "976--981",
3{C}-Si{C}/Si (001) interface",
publisher = "AIP",
year = "2009",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "106",
number = "7",
eid = "073522",
growth on Si(001) surface",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "7",
pages = "4438--4445",
model, interface",
}
+@Article{chirita97,
+ title = "Strain relaxation and thermal stability of the
+ 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
+ dynamics study",
+ journal = "Thin Solid Films",
+ volume = "294",
+ number = "1-2",
+ pages = "47--49",
+ year = "1997",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/S0040-6090(96)09257-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
+ author = "V. Chirita and L. Hultman and L. R. Wallenberg",
+ keywords = "Strain relaxation",
+ keywords = "Interfaces",
+ keywords = "Thermal stability",
+ keywords = "Molecular dynamics",
+ notes = "tersoff sic/si interface study",
+}
+
+@Article{cicero02,
+ title = "Ab initio Study of Misfit Dislocations at the
+ $Si{C}/Si(001)$ Interface",
+ author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
+ Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "89",
+ number = "15",
+ pages = "156101",
+ numpages = "4",
+ year = "2002",
+ month = sep,
+ doi = "10.1103/PhysRevLett.89.156101",
+ publisher = "American Physical Society",
+ notes = "sic/si interface study",
+}
+
@Article{pizzagalli03,
title = "Theoretical investigations of a highly mismatched
interface: Si{C}/Si(001)",
notes = "dislocations in diamond lattice",
}
+@Article{deguchi92,
+ title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+ Ion `Hot' Implantation",
+ author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
+ Hirao and Naoki Arai and Tomio Izumi",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "31",
+ number = "Part 1, No. 2A",
+ pages = "343--347",
+ numpages = "4",
+ year = "1992",
+ URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
+ doi = "10.1143/JJAP.31.343",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "c-c bonds in c implanted si, hot implantation
+ efficiency, c-c hard to break by thermal annealing",
+}
+
@Article{eichhorn99,
author = "F. Eichhorn and N. Schell and W. Matz and R.
K{\"{o}}gler",
synchrotron x-ray diffraction",
publisher = "AIP",
year = "1999",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "86",
number = "8",
pages = "4184--4187",
precipitation; semiconductor doping",
URL = "http://link.aip.org/link/?JAP/86/4184/1",
doi = "10.1063/1.371344",
- notes = "sic conversion by ibs, detected substitutional
- carbon",
+ notes = "sic conversion by ibs, detected substitutional carbon,
+ expansion of si lattice",
}
@Article{eichhorn02,
carbon ion implantation",
publisher = "AIP",
year = "2002",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "91",
number = "3",
pages = "1287--1292",
URL = "http://link.aip.org/link/?JAP/91/1287/1",
doi = "10.1063/1.1428105",
notes = "3c-sic alignement to si host in ibs depending on
- temperature, might explain c int to c sub trafo",
+ temperature, might explain c into c sub trafo",
}
@Article{lucas10,
silicon carbide: calculation of bulk properties,
high-pressure phases, point and extended defects, and
amorphous structures",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "22",
number = "3",
pages = "035802",
Beauchamp",
title = "Comparison between classical potentials and ab initio
methods for silicon under large shear",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "15",
number = "41",
pages = "6943",
title = "Verification of Tersoff's Potential for Static
Structural Analysis of Solids of Group-{IV} Elements",
author = "Koji Moriguchi and Akira Shintani",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "37",
number = "Part 1, No. 2",
pages = "414--422",
notes = "tersoff stringent test",
}
+@Article{mazzarolo01,
+ title = "Low-energy recoils in crystalline silicon: Quantum
+ simulations",
+ author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
+ Lulli and Eros Albertazzi",
+ journal = "Phys. Rev. B",
+ volume = "63",
+ number = "19",
+ pages = "195207",
+ numpages = "4",
+ year = "2001",
+ month = apr,
+ doi = "10.1103/PhysRevB.63.195207",
+ publisher = "American Physical Society",
+}
+
@Article{holmstroem08,
title = "Threshold defect production in silicon determined by
density functional theory molecular dynamics
@Article{nordlund97,
title = "Repulsive interatomic potentials calculated using
Hartree-Fock and density-functional theory methods",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "132",
number = "1",
pages = "45--54",
title = "Efficiency of ab-initio total energy calculations for
metals and semiconductors using a plane-wave basis
set",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "6",
number = "1",
pages = "15--50",
ISSN = "0927-0256",
doi = "DOI: 10.1016/0927-0256(96)00008-0",
URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
- author = "G. Kresse and J. Furthmüller",
+ author = "G. Kresse and J. Furthm{\"{u}}ller",
notes = "vasp ref",
}
title = "Accurate and simple density functional for the
electronic exchange energy: Generalized gradient
approximation",
- author = "John P. Perdew and Wang Yue",
+ author = "John P. Perdew and Yue Wang",
journal = "Phys. Rev. B",
volume = "33",
number = "12",
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "12",
number = "4",
pages = "309--318",
950 [degree]{C}",
publisher = "AIP",
year = "1995",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "66",
number = "20",
pages = "2646--2648",
alloys",
publisher = "AIP",
year = "1998",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "84",
number = "8",
pages = "4631--4633",
annealing",
URL = "http://link.aip.org/link/?JAP/84/4631/1",
doi = "10.1063/1.368703",
- notes = "coherent 3C-SiC, topotactic",
+ notes = "coherent 3C-SiC, topotactic, critical coherence size",
}
@Article{jones04,
author = "R Jones and B J Coomer and P R Briddon",
title = "Quantum mechanical modelling of defects in
semiconductors",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "16",
number = "27",
pages = "S2643",
molecular-beam epitaxy",
publisher = "AIP",
year = "2002",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "91",
number = "9",
pages = "5716--5727",
doi = "10.1103/PhysRevB.55.2188",
publisher = "American Physical Society",
notes = "ab initio c in si and di-carbon defect, no formation
- energies",
+ energies, different migration barriers and paths",
}
@Article{burnard93,
carbon defect, formation energies",
}
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "6",
number = "2",
pages = "158--172",
doi = "DOI: 10.1016/0927-0256(96)00030-4",
URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
author = "Efthimios Kaxiras",
- notes = "might contain c 100 db formation energy",
+ notes = "might contain c 100 db formation energy, overview md,
+ tight binding, first principles",
}
@Article{kaukonen98,
- title = {Effect of N and B doping on the growth of CVD diamond $(100):H(2\ifmmode\times\else\texttimes\fi{}1)$ surfaces},
- author = {Kaukonen, M. and Sitch, P. K. and Jungnickel, G. and Nieminen, R. M. and P\"oykk\"o, Sami and Porezag, D. and Frauenheim, Th. },
- journal = {Phys. Rev. B},
- volume = {57},
- number = {16},
- pages = {9965--9970},
- numpages = {5},
- year = {1998},
- month = {Apr},
- doi = {10.1103/PhysRevB.57.9965},
- publisher = {American Physical Society},
- notes = "constrained conjugate gradient relaxation technique (crt)"
+ title = "Effect of {N} and {B} doping on the growth of {CVD}
+ diamond
+ $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
+ surfaces",
+ author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
+ M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
+ Th. Frauenheim",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "16",
+ pages = "9965--9970",
+ numpages = "5",
+ year = "1998",
+ month = apr,
+ doi = "10.1103/PhysRevB.57.9965",
+ publisher = "American Physical Society",
+ notes = "constrained conjugate gradient relaxation technique
+ (crt)",
+}
+
+@Article{gali03,
+ title = "Correlation between the antisite pair and the ${DI}$
+ center in Si{C}",
+ author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
+ I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
+ W. J. Choyke",
+ journal = "Phys. Rev. B",
+ volume = "67",
+ number = "15",
+ pages = "155203",
+ numpages = "5",
+ year = "2003",
+ month = apr,
+ doi = "10.1103/PhysRevB.67.155203",
+ publisher = "American Physical Society",
+}
+
+@Article{chen98,
+ title = "Production and recovery of defects in Si{C} after
+ irradiation and deformation",
+ journal = "J. Nucl. Mater.",
+ volume = "258-263",
+ number = "Part 2",
+ pages = "1803--1808",
+ year = "1998",
+ note = "",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(98)00139-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
+ author = "J. Chen and P. Jung and H. Klein",
+}
+
+@Article{weber01,
+ title = "Accumulation, dynamic annealing and thermal recovery
+ of ion-beam-induced disorder in silicon carbide",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
+ volume = "175-177",
+ number = "",
+ pages = "26--30",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(00)00542-5",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
+ author = "W. J. Weber and W. Jiang and S. Thevuthasan",
+ keywords = "Amorphization",
+ keywords = "Irradiation effects",
+ keywords = "Thermal recovery",
+ keywords = "Silicon carbide",
}
+@Article{bockstedte03,
+ title = "Ab initio study of the migration of intrinsic defects
+ in $3{C}-Si{C}$",
+ author = "Michel Bockstedte and Alexander Mattausch and Oleg
+ Pankratov",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "20",
+ pages = "205201",
+ numpages = "17",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.205201",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{rauls03a,
+ title = "Theoretical study of vacancy diffusion and
+ vacancy-assisted clustering of antisites in Si{C}",
+ author = "E. Rauls and Th. Frauenheim and A. Gali and P.
+ De\'ak",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "15",
+ pages = "155208",
+ numpages = "9",
+ year = "2003",
+ month = oct,
+ doi = "10.1103/PhysRevB.68.155208",
+ publisher = "American Physical Society",
+}