notes = "derivation of albe bond order formalism",
}
+@Article{bean71,
+ author = "A. R. Bean and R. C. Newman",
+ title = "",
+ journal = "J. Phys. Chem. Solids",
+ volume = "32",
+ pages = "1211",
+ year = "1971",
+ notes = "experimental solubility data of carbon in silicon",
+}
+
@Article{capano97,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
year = "1997",
}
+@Article{fischer90,
+ author = "G. R. Fisher and P. Barnes",
+ title = "Towards a unified view of polytypism in silicon
+ carbide",
+ journal = "Philosophical Magazine Part B",
+ volume = "61",
+ pages = "217--236",
+ year = "1990",
+ notes = "sic polytypes",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
notes = "virial derivation for 3-body tersoff potential",
}
+@Article{moissan04,
+ author = "Henri Moissan",
+ title = "Nouvelles recherches sur la météorité de Cañon
+ Diablo",
+ journal = "Comptes rendus de l'Académie des Sciences",
+ volume = "139",
+ pages = "773--786",
+ year = "1904",
+}
+
@Book{park98,
author = "Y. S. Park",
title = "Si{C} Materials and Devices",
month = sep,
doi = "10.1103/PhysRevLett.83.2351",
publisher = "American Physical Society",
- notes = "nice images of the defects",
+ notes = "nice images of the defects, si defect overview +
+ refs",
}
-@Article{capazd94,
+@Article{capaz94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
+ author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
dumbbell",
}
+@Article{dal_pino93,
+ title = "Ab initio investigation of carbon-related defects in
+ silicon",
+ author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "19",
+ pages = "12554--12557",
+ numpages = "3",
+ year = "1993",
+ month = may,
+ doi = "10.1103/PhysRevB.47.12554",
+ publisher = "American Physical Society",
+ notes = "c interstitials in crystalline silicon",
+}
+
@Article{car84,
title = "Microscopic Theory of Atomic Diffusion Mechanisms in
Silicon",
notes = "mc md, strain compensation in si ge by c insertion",
}
+@Article{bean70,
+ title = "Low temperature electron irradiation of silicon
+ containing carbon",
+ journal = "Solid State Communications",
+ volume = "8",
+ number = "3",
+ pages = "175--177",
+ year = "1970",
+ note = "",
+ ISSN = "0038-1098",
+ doi = "DOI: 10.1016/0038-1098(70)90074-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+ author = "A. R. Bean and R. C. Newman",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
month = sep,
doi = "10.1103/PhysRevB.42.5759",
publisher = "American Physical Society",
+ notes = "carbon diffusion in silicon",
+}
+
+@Article{tipping87,
+ author = "A K Tipping and R C Newman",
+ title = "The diffusion coefficient of interstitial carbon in
+ silicon",
+ journal = "Semiconductor Science and Technology",
+ volume = "2",
+ number = "5",
+ pages = "315--317",
+ URL = "http://stacks.iop.org/0268-1242/2/315",
+ year = "1987",
+ notes = "diffusion coefficient of carbon interstitials in
+ silicon",
}
@Article{strane96,
publisher = "American Physical Society",
}
+@Article{tersoff90,
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
+}
+
@Article{fahey89,
title = "Point defects and dopant diffusion in silicon",
author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
and J. M. Poate",
}
+
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap"
+}
+
+@Article{powell94,
+ author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+ collaboration = "",
+ title = "Formation of beta-Si{C} nanocrystals by the relaxation
+ of Si[sub 1 - y]{C}[sub y] random alloy layers",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "64",
+ number = "3",
+ pages = "324--326",
+ keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+ EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+ TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+ SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/64/324/1",
+ doi = "10.1063/1.111195",
+ notes = "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+ author = "Richard A. Soref",
+ collaboration = "",
+ title = "Optical band gap of the ternary semiconductor Si[sub 1
+ - x - y]Ge[sub x]{C}[sub y]",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Journal of Applied Physics",
+ volume = "70",
+ number = "4",
+ pages = "2470--2472",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+ OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+ TERNARY ALLOYS",
+ URL = "http://link.aip.org/link/?JAP/70/2470/1",
+ doi = "10.1063/1.349403",
+ notes = "band gap of strained si by c",
+}
+
+@Article{kasper91,
+ author = "E Kasper",
+ title = "Superlattices of group {IV} elements, a new
+ possibility to produce direct band gap material",
+ journal = "Physica Scripta",
+ volume = "T35",
+ pages = "232--236",
+ URL = "http://stacks.iop.org/1402-4896/T35/232",
+ year = "1991",
+ notes = "superlattices, convert indirect band gap into a
+ quasi-direct one",
+}
+
+@Article{osten99,
+ author = "H. J. Osten and J. Griesche and S. Scalese",
+ collaboration = "",
+ title = "Substitutional carbon incorporation in epitaxial
+ Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Applied Physics Letters",
+ volume = "74",
+ number = "6",
+ pages = "836--838",
+ keywords = "molecular beam epitaxial growth; semiconductor growth;
+ wide band gap semiconductors; interstitials; silicon
+ compounds",
+ URL = "http://link.aip.org/link/?APL/74/836/1",
+ doi = "10.1063/1.123384",
+ notes = "substitutional c in si",
+}
+
+@Article{hohenberg64,
+ title = "Inhomogeneous Electron Gas",
+ author = "P. Hohenberg and W. Kohn",
+ journal = "Phys. Rev.",
+ volume = "136",
+ number = "3B",
+ pages = "B864--B871",
+ numpages = "7",
+ year = "1964",
+ month = nov,
+ doi = "10.1103/PhysRev.136.B864",
+ publisher = "American Physical Society",
+ notes = "density functional theory, dft",
+}
+
+@Article{kohn65,
+ title = "Self-Consistent Equations Including Exchange and
+ Correlation Effects",
+ author = "W. Kohn and L. J. Sham",
+ journal = "Phys. Rev.",
+ volume = "140",
+ number = "4A",
+ pages = "A1133--A1138",
+ numpages = "5",
+ year = "1965",
+ month = nov,
+ doi = "10.1103/PhysRev.140.A1133",
+ publisher = "American Physical Society",
+ notes = "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+ title = "Strain-stabilized highly concentrated pseudomorphic
+ $Si1-x$$Cx$ layers in Si",
+ author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+ J. Osten",
+ journal = "Phys. Rev. Lett.",
+ volume = "72",
+ number = "22",
+ pages = "3578--3581",
+ numpages = "3",
+ year = "1994",
+ month = may,
+ doi = "10.1103/PhysRevLett.72.3578",
+ publisher = "American Physical Society",
+ notes = "high c concentration in si, heterostructure, starined
+ si, dft",
+}
+
+@Article{chang05,
+ title = "Electron Transport Model for Strained Silicon-Carbon
+ Alloy",
+ author = "Shu-Tong Chang and Chung-Yi Lin",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "44",
+ number = "4B",
+ pages = "2257--2262",
+ numpages = "5",
+ year = "2005",
+ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
+ doi = "10.1143/JJAP.44.2257",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+ author = "H. J. Osten and P. Gaworzewski",
+ collaboration = "",
+ title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+ and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+ Si(001)",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "82",
+ number = "10",
+ pages = "4977--4981",
+ keywords = "silicon compounds; Ge-Si alloys; wide band gap
+ semiconductors; semiconductor epitaxial layers; carrier
+ density; Hall mobility; interstitials; defect states",
+ URL = "http://link.aip.org/link/?JAP/82/4977/1",
+ doi = "10.1063/1.366364",
+ notes = "charge transport in strained si",
+}
+
+@Article{PhysRevB.69.155214,
+ title = "Carbon-mediated aggregation of self-interstitials in
+ silicon: {A} large-scale molecular dynamics study",
+ author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "15",
+ pages = "155214",
+ numpages = "8",
+ year = "2004",
+ month = apr,
+ doi = "10.1103/PhysRevB.69.155214",
+ publisher = "American Physical Society",
+ notes = "simulation using promising tersoff reparametrization",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ month = dec,
+ doi = "10.1103/PhysRevB.52.15150",
+ publisher = "American Physical Society",
+ notes = "promising tersoff reparametrization",
+}
+
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "The Journal of Chemical Physics",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}