notes = {virial derivation for 3-body tersoff potential}
}
+@Article{verlet67,
+ title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
+ author = {Verlet, Loup },
+ journal = {Phys. Rev.},
+ volume = {159},
+ number = {1},
+ pages = {98},
+ year = {1967},
+ month = {Jul},
+ doi = {10.1103/PhysRev.159.98},
+ publisher = {American Physical Society},
+ notes = {velocity verlet integration algorithm equation of motion}
+}
+
+@Article{berendsen84,
+ title = {Molecular dynamics with coupling to an external bath},
+ author = {H. J. C. Berendsen},
+ year = {1984},
+ journal = {J. Chem. Phys.},
+ volume = {81},
+ pages = {3684},
+ notes = {berendsen thermostat barostat}
+}
+
% molecular dynamics: applications
@Article{batra87,
configuration}
}
+@Article{gao02,
+ title = {Cascade overlap and amorphization in $3C-SiC:$
+ Defect accumulation, topological features, and disordering},
+ author = {Gao, F. and Weber, W. J.},
+ journal = {Phys. Rev. B},
+ volume = {66},
+ number = {2},
+ pages = {024106},
+ numpages = {10},
+ year = {2002},
+ month = {Jul},
+ doi = {10.1103/PhysRevB.66.024106},
+ publisher = {American Physical Society},
+ note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
+ pair correlation of amorphous sic, md result analyze}
+}
+
+@Article{batra87,
+ title = {SiC/Si heteroepitaxial growth},
+ author = {M. Kitabatake},
+ journal = {Thin Solid Films},
+ volume = {369},
+ pages = {257--264},
+ numpages = {8},
+ year = {2000},
+ notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
% tight binding
@Article{tang97,
notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
}
-% experimental stuff
+% experimental stuff - interstitials
@Article{watkins76,
title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {Watkins, G. D. and Brower, K. L.},
+ author = {G. D. Watkins and K. L. Brower},
journal = {Phys. Rev. Lett.},
volume = {36},
number = {22},
notes = {epr observations of 100 interstitial carbon atom in silicon}
}
-@Article{PhysRevB.42.5759,
+@Article{song90,
title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
author = {L. W. Song, G. D. Watkins},
journal = {Phys. Rev. B},
publisher = {American Physical Society}
}
+% experimental stuff - strained silicon
+
+@Article{strane96,
+ title = {Carbon incorporation into Si at high concentrations
+ by ion implantation and solid phase epitaxy},
+ author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
+ J.K. Watanabe, J. W. Mayer},
+ journal = {J. Appl. Phys.},
+ volume = {79},
+ pages = {637},
+ year = {1996},
+ month = {January},
+ doi = {10.1063/1.360806},
+ notes = {strained silicon, carbon supersaturation}
+}
+
+% sic formation mechanism
+
+@article{werner97,
+ author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+ title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+ publisher = {AIP},
+ year = {1997},
+ journal = {Applied Physics Letters},
+ volume = {70},
+ number = {2},
+ pages = {252-254},
+ keywords = {silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing;
+ positron annihilation; secondary ion mass spectroscopy;
+ buried layers; precipitation},
+ url = {http://link.aip.org/link/?APL/70/252/1},
+ doi = {10.1063/1.118381},
+ notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+ author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ collaboration = {},
+ title = {Precipitation and relaxation in strained
+ Si[sub 1 - y]C[sub y]/Si heterostructures},
+ publisher = {AIP},
+ year = {1994},
+ journal = {Journal of Applied Physics},
+ volume = {76},
+ number = {6},
+ pages = {3656-3668},
+ keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+ url = {http://link.aip.org/link/?JAP/76/3656/1},
+ doi = {10.1063/1.357429},
+ notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
+% properties sic
+
+@Article{edgar92,
+ title = {Prospects for device implementation of wide band gap semiconductors},
+ author = {J. H. Edgar},
+ journal = {J. Mater. Res.},
+ volume = {7},
+ pages = {235},
+ year = {1992},
+ month = {January},
+ doi = {10.1557/JMR.1992.0235},
+ notes = {properties wide band gap semiconductor, sic polytypes}
+}
+
% my own publications
@article{zirkelbach2007,
title = {Monte Carlo simulation study of a selforganisation process
leading to ordered precipitate structures},
author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
+ journal = {Nucl. Instr. and Meth. B},
volume = {257},
number = {1--2},
pages = {75--79},
title = {Monte-Carlo simulation study of the self-organization of nanometric
amorphous precipitates in regular arrays during ion irradiation},
author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
+ journal = {Nucl. Instr. and Meth. B},
volume = {242},
number = {1--2},
pages = {679--682},
publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
}
+% the one of my boss
+
+@Article{lindner02,
+ title = {High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks},
+ author = {J. K. N. Lindner},
+ journal = {Appl. Phys. A},
+ volume = {77},
+ pages = {27--38},
+ year = {2003},
+ doi = {10.1007/s00339-002-2062-8},
+ notes = {ibs, burried sic layers}
+}
+
+